| Шығарылым |
Атауы |
Файл |
| Том 51, № 8 (2017) |
On the band structure of Sb2Te3–xSex (0 ≤ x ≤ 0.1): Kinetic and optical data |
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Nemov S., Ulashkevich Y., Allahkhah A., Jafarov M.
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| Том 51, № 11 (2017) |
On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors |
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Aleshkin V., Gavrilenko L.
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| Том 53, № 12 (2019) |
On the Characteristic Features of the Impurity Energy Spectrum in Arsenides |
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Kamiliov I., Daunov M., Gajiev G., Arslanov R.
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| Том 53, № 9 (2019) |
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures |
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Plankina S., Vikhrova O., Zvonkov B., Zubkov S., Kriukov R., Nezhdanov A., Pavlov D., Pashen’kin I., Sushkov A.
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| Том 50, № 1 (2016) |
On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range |
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Sobolev V., Sobolev V., Anisimov D.
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| Том 50, № 11 (2016) |
On the condensation of exciton polaritons in microcavities induced by a magnetic field |
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Kochereshko V., Avdoshina D., Savvidis P., Tsintzos S., Hatzopoulos Z., Kavokin A., Besombes L., Mariette H.
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| Том 51, № 7 (2017) |
On the conduction-band structure of bismuth telluride: optical absorption data |
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Veis A., Lukyanova L., Kutasov V.
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| Том 50, № 11 (2016) |
On the crystal structure and thermoelectric properties of thin Si1–xMnx films |
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Erofeeva I., Dorokhin M., Lesnikov V., Zdoroveishchev A., Kudrin A., Pavlov D., Usov U.
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| Том 51, № 9 (2017) |
On the delta-type doping of GaAs-based heterostructures with manganese compounds |
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Moiseev K., Nevedomsky V., Kudriavtsev Y., Escobosa-Echavarria A., Lopez-Lopez M.
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| Том 51, № 6 (2017) |
On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and Bi0.5Sb1.5Te3 solid solution |
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Lukyanova L., Boikov Y., Usov O., Danilov V.
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| Том 51, № 6 (2017) |
On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation |
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Kirienko D., Berezina O.
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| Том 51, № 2 (2017) |
On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes |
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Prudaev I., Kopyev V., Romanov I., Oleynik V.
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| Том 52, № 1 (2018) |
On the Electret Effect in Polymer–Ferroelectric Piezoceramic Composites with Various Values of the Electronegativity of the Polymer Matrix and Piezophase Cations |
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Kurbanov M., Ramazanova I., Dadashev Z., Yusifova U., Huseynova G., Azizova K., Farajzadeh I.
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| Том 50, № 2 (2016) |
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin |
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Ryabtsev S., Chuvenkova O., Kannykin S., Popov A., Ryabtseva N., Voischev S., Turishchev S., Domashevskaya E.
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| Том 51, № 13 (2017) |
On the Existence of Transverse Acoustoelectric Stoneley Waves and Their Applicability in Acoustonanoelectronics |
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Morocha A., Rozhkov A.
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| Том 52, № 2 (2018) |
On the Extended Holstein–Hubbard Model for Epitaxial Graphene on Metal |
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Davydov S.
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| Том 52, № 7 (2018) |
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers |
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Mamutin V., Vasilyev A., Lyutetskiy A., Ilyinskaya N., Zadiranov Y., Sofronov A., Firsov D., Vorobjev L., Maleev N., Ustinov V.
|
| Том 52, № 8 (2018) |
On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation |
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Vasileva G., Vasilyev Y., Novikov S., Danilov S., Ganichev S.
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| Том 52, № 9 (2018) |
On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films |
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Volodin V., Rui Z., Krivyakin G., Antonenko A., Stoffel M., Rinnert H., Vergnat M.
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| Том 50, № 4 (2016) |
On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) with time-modulated dc magnetron plasma |
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Undalov Y., Terukov E., Gusev O., Trapeznikova I.
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| Том 50, № 9 (2016) |
On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena |
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Petrov V., Sidorov V., Talnishnikh N., Chernyakov A., Shabunina E., Shmidt N., Usikov A., Helava H., Makarov Y.
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| Том 50, № 10 (2016) |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm |
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Novikov I., Karachinsky L., Kolodeznyi E., Bougrov V., Kurochkin A., Gladyshev A., Babichev A., Gadzhiev I., Buyalo M., Zadiranov Y., Usikova A., Shernyakov Y., Savelyev A., Nyapshaev I., Egorov A.
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| Том 52, № 10 (2018) |
On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties |
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Bodnar I., Detkov S., Kasyuk Y., Fedotova Y.
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| Том 51, № 1 (2017) |
On the growth, structure, and surface morphology of epitaxial CdTe films |
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Nuriyev I., Mehrabova M., Nazarov A., Sadigov R., Hasanov N.
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| Том 51, № 10 (2017) |
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate |
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Zubov F., Semenova E., Kulkova I., Yvind K., Kryzhanovskaya N., Maximov M., Zhukov A.
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| Нәтижелер 1443 - 851/875 |
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