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Vol 51, No 8 (2017) On the band structure of Sb2Te3–xSex (0 ≤ x ≤ 0.1): Kinetic and optical data
Nemov S.A., Ulashkevich Y.V., Allahkhah A.A., Jafarov M.B.
Vol 51, No 11 (2017) On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors
Aleshkin V.Y., Gavrilenko L.V.
Vol 53, No 12 (2019) On the Characteristic Features of the Impurity Energy Spectrum in Arsenides
Kamiliov I.K., Daunov M.I., Gajiev G.M., Arslanov R.K.
Vol 53, No 9 (2019) On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures
Plankina S.M., Vikhrova O.V., Zvonkov B.N., Zubkov S.Y., Kriukov R.N., Nezhdanov A.V., Pavlov D.A., Pashen’kin I.Y., Sushkov A.A.
Vol 50, No 1 (2016) On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range
Sobolev V.V., Sobolev V.V., Anisimov D.V.
Vol 50, No 11 (2016) On the condensation of exciton polaritons in microcavities induced by a magnetic field
Kochereshko V.P., Avdoshina D.V., Savvidis P., Tsintzos S.I., Hatzopoulos Z., Kavokin A.V., Besombes L., Mariette H.
Vol 51, No 7 (2017) On the conduction-band structure of bismuth telluride: optical absorption data
Veis A.N., Lukyanova L.N., Kutasov V.A.
Vol 50, No 11 (2016) On the crystal structure and thermoelectric properties of thin Si1–xMnx films
Erofeeva I.V., Dorokhin M.V., Lesnikov V.P., Zdoroveishchev A.V., Kudrin A.V., Pavlov D.A., Usov U.V.
Vol 51, No 9 (2017) On the delta-type doping of GaAs-based heterostructures with manganese compounds
Moiseev K.D., Nevedomsky V.N., Kudriavtsev Y., Escobosa-Echavarria A., Lopez-Lopez M.
Vol 51, No 6 (2017) On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and Bi0.5Sb1.5Te3 solid solution
Lukyanova L.N., Boikov Y.A., Usov O.A., Danilov V.A.
Vol 51, No 6 (2017) On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation
Kirienko D.A., Berezina O.Y.
Vol 51, No 2 (2017) On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes
Prudaev I.A., Kopyev V.V., Romanov I.S., Oleynik V.L.
Vol 52, No 1 (2018) On the Electret Effect in Polymer–Ferroelectric Piezoceramic Composites with Various Values of the Electronegativity of the Polymer Matrix and Piezophase Cations
Kurbanov M.A., Ramazanova I.S., Dadashev Z.A., Yusifova U.V., Huseynova G.K., Azizova K.K., Farajzadeh I.A.
Vol 50, No 2 (2016) On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin
Ryabtsev S.V., Chuvenkova O.A., Kannykin S.V., Popov A.E., Ryabtseva N.S., Voischev S.S., Turishchev S.Y., Domashevskaya E.P.
Vol 51, No 13 (2017) On the Existence of Transverse Acoustoelectric Stoneley Waves and Their Applicability in Acoustonanoelectronics
Morocha A.K., Rozhkov A.S.
Vol 52, No 2 (2018) On the Extended Holstein–Hubbard Model for Epitaxial Graphene on Metal
Davydov S.Y.
Vol 52, No 7 (2018) On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers
Mamutin V.V., Vasilyev A.P., Lyutetskiy A.V., Ilyinskaya N.D., Zadiranov Y.M., Sofronov A.N., Firsov D.A., Vorobjev L.E., Maleev N.A., Ustinov V.M.
Vol 52, No 8 (2018) On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation
Vasileva G.Y., Vasilyev Y.B., Novikov S.N., Danilov S.N., Ganichev S.D.
Vol 52, No 9 (2018) On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films
Volodin V.A., Rui Z., Krivyakin G.K., Antonenko A.K., Stoffel M., Rinnert H., Vergnat M.
Vol 50, No 4 (2016) On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) with time-modulated dc magnetron plasma
Undalov Y.K., Terukov E.I., Gusev O.B., Trapeznikova I.N.
Vol 50, No 9 (2016) On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
Petrov V.N., Sidorov V.G., Talnishnikh N.A., Chernyakov A.E., Shabunina E.I., Shmidt N.M., Usikov A.S., Helava H., Makarov Y.N.
Vol 50, No 10 (2016) On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
Novikov I.I., Karachinsky L.Y., Kolodeznyi E.S., Bougrov V.E., Kurochkin A.S., Gladyshev A.G., Babichev A.V., Gadzhiev I.M., Buyalo M.S., Zadiranov Y.M., Usikova A.A., Shernyakov Y.M., Savelyev A.V., Nyapshaev I.A., Egorov A.Y.
Vol 52, No 10 (2018) On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties
Bodnar I.V., Detkov S.A., Kasyuk Y.V., Fedotova Y.A.
Vol 51, No 1 (2017) On the growth, structure, and surface morphology of epitaxial CdTe films
Nuriyev I.R., Mehrabova M.A., Nazarov A.M., Sadigov R.M., Hasanov N.G.
Vol 51, No 10 (2017) On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate
Zubov F.I., Semenova E.S., Kulkova I.V., Yvind K., Kryzhanovskaya N.V., Maximov M.V., Zhukov A.E.
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