| Шығарылым |
Атауы |
Файл |
| Том 51, № 7 (2017) |
On a carbon nanostructure-based thermoelectric converter with record parameters |
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Eidelman E.
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| Том 50, № 1 (2016) |
On a combined approach to studying the correlation parameters of self-organizing structures |
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Alpatov A., Vikhrov S., Vishnyakov N., Mursalov S., Rybin N., Rybina N.
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| Том 51, № 6 (2017) |
On a neutron detector based on TlInSe2 crystals intercalated with a lithium isotope |
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Alekseev I., Goremychkin E., Gundorin N., Petrenko A., Sashin I.
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| Том 52, № 1 (2018) |
On a New Mechanism for the Realization of Ohmic Contacts |
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Sachenko A., Belyaev A., Konakova R.
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| Том 50, № 12 (2016) |
On a new method of heterojunction formation in III–V nanowires |
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Sibirev N., Koryakin A., Dubrovskii V.
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| Том 50, № 4 (2016) |
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy |
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Sharofidinov S., Nikolaev V., Smirnov A., Chikiryaka A., Nikitina I., Odnoblyudov M., Bugrov V., Romanov A.
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| Том 50, № 8 (2016) |
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology |
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Serafimovich P., Stepikhova M., Kazanskiy N., Gusev S., Egorov A., Skorokhodov E., Krasilnik Z.
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| Том 50, № 8 (2016) |
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs |
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Arutyunyan S., Pavlov A., Pavlov B., Tomosh K., Fedorov Y.
|
| Том 50, № 1 (2016) |
On controlling the electronic states of shallow donors using a finite-size metal gate |
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Levchuk E., Makarenko L.
|
| Том 50, № 3 (2016) |
On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition |
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Klochko N., Klepikova K., Kopach V., Khrypunov G., Myagchenko Y., Melnychuk E., Lyubov V., Kopach A.
|
| Том 50, № 7 (2016) |
On current spreading in solar cells: a two-parameter tube model |
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Mintairov M., Evstropov V., Mintairov S., Timoshina N., Shvarts M., Kalyuzhnyy N.
|
| Том 52, № 14 (2018) |
On Derivation of Dresselhaus Spin-Splitting Hamiltonians in One-Dimensional Electron Systems |
|
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Kokurin I.
|
| Том 53, № 5 (2019) |
On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes |
|
|
Davydov S.
|
| Том 50, № 3 (2016) |
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC |
|
|
Kyuregyan A.
|
| Том 50, № 9 (2016) |
On methods of determining the band gap of semiconductor structures with p–n junctions |
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Vikulin I., Korobitsyn B., Kriskiv S.
|
| Том 52, № 1 (2018) |
On Mobility of Definite Energy Charge Carriers |
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Belousov Y., Gorelkin V., Chernousov I.
|
| Том 52, № 8 (2018) |
On Recombination Processes in CdS–PbS Films |
|
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Rokakh A., Shishkin M., Atkin V.
|
| Том 53, № 9 (2019) |
On the Amplification of Terahertz Radiation by High-Q Resonant Plasmons in a Periodic Graphene Bilayer under Plasmon-Mode Anticrossing |
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Polischuk O., Fateev D., Popov V.
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| Том 53, № 11 (2019) |
On the Anisotropic Trigger Electrical Properties of Two-Dimensional Superlattices |
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Zav’yalov D., Konchenkov V., Kryuchkov S.
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| Том 53, № 12 (2019) |
On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges |
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Torkhov N., Babak L., Kokolov A.
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| Том 52, № 8 (2018) |
On the Application of Silicate Glasses with CdSxSe1–x Semiconductor Nanocrystals as Optical Thermometers and Optical Filters with a Controlled Absorption Edge |
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Petrosyan P., Grigoryan L., Musaelyan G.
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| Том 52, № 12 (2018) |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
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Baidus N., Yunin P., Shaleev M., Reunov D., Rykov A., Novikov A., Nekorkin S., Kudryavtsev K., Krasilnik Z., Dubinov A., Aleshkin V., Yurasov D.
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| Том 53, № 10 (2019) |
On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity |
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Kocharovsky V., Kukushkin V., Tarasov S., Kocharovskaya E., Kocharovsky V.
|
| Том 51, № 12 (2017) |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
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Ikonnikov A., Bovkun L., Rumyantsev V., Krishtopenko S., Aleshkin V., Kadykov A., Orlita M., Potemski M., Gavrilenko V., Morozov S., Dvoretsky S., Mikhailov N.
|
| Том 53, № 5 (2019) |
On the Band Structure of Bi2Te3 |
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Nemov S., Ulashkevich Y., Rulimov A., Demchenko A., Allahkhah A., Sveshnikov I., Dzhafarov M.
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| Нәтижелер 1443 - 826/850 |
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