| Выпуск |
Название |
Файл |
| Том 50, № 1 (2016) |
Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films |
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Zaynabidinov S., Saidov A., Leiderman A., Kalanov M., Usmonov S., Rustamova V., Boboev A.
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| Том 50, № 2 (2016) |
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface |
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Bakulin A., Kulkova S.
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| Том 50, № 9 (2016) |
Halogen diffusion on a Ga-stabilized ζ-GaAs(001)–(4 × 2) surface |
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Bakulin A., Kulkova S.
|
| Том 53, № 13 (2019) |
Hardness and Fracture Toughness of Solid Solutions of Mg2Si and Mg2Sn |
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Hernandez G., Yasseri M., Ayachi S., de Boor J., Müller E.
|
| Том 50, № 11 (2016) |
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source |
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Daniltsev V., Demidov E., Drozdov M., Drozdov Y., Kraev S., Surovegina E., Shashkin V., Yunin P.
|
| Том 52, № 16 (2018) |
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy |
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Sobolev M., Lazarenko A., Mizerov A., Nikitina E., Pirogov E., Timoshnev S., Bouravleuv A.
|
| Том 50, № 8 (2016) |
Heterojunction low-barrier gaas diodes with an improved reverse I–V characteristic |
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Yunusov I., Kagadei V., Fazleeva A., Arykov V.
|
| Том 50, № 4 (2016) |
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates |
|
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Mintairov S., Emelyanov V., Rybalchenko D., Salii R., Timoshina N., Shvarts M., Kalyuzhnyy N.
|
| Том 52, № 6 (2018) |
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers |
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Babichev A., Kurochkin A., Kolodeznyi E., Filimonov A., Usikova A., Nevedomsky V., Gladyshev A., Karachinsky L., Novikov I., Egorov A.
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| Том 52, № 11 (2018) |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
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Abramkin D., Petrushkov M., Putyato M., Semyagin B., Shamirzaev T.
|
| Том 53, № 14 (2019) |
High Directivity in the Narrow Band of Spherical Dielectric Antennas in GHz and THz Ranges |
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Storozhenko D., Nepomnyaschiy A., Deev A.
|
| Том 52, № 14 (2018) |
High Quality Graphene Grown by Sublimation on 4H-SiC (0001) |
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Lebedev A., Bokai K., Gushchina E., Dunaevskiy M., Eliseyev I., Smirnov A., Lebedev S., Usachov D., Davydov V., Pezoldt J.
|
| Том 52, № 4 (2018) |
High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches |
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Bagraev N., Klyachkin L., Khromov V., Malyarenko A., Mashkov V., Matveev T., Romanov V., Rul’ N., Taranets K.
|
| Том 53, № 5 (2019) |
High-Efficiency Thermoelectric Single-Photon Detector Based on Lanthanum and Cerium Hexaborides |
|
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Kuzanyan A., Kuzanyan A., Gurin V., Volkov M., Nikoghosyan V.
|
| Том 51, № 9 (2017) |
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process |
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Kyuregyan A.
|
| Том 51, № 9 (2017) |
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency |
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Kyuregyan A.
|
| Том 53, № 4 (2019) |
High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects |
|
|
Kyuregyan A.
|
| Том 50, № 3 (2016) |
High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time |
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Gusev A., Lyubutin S., Rukin S., Tsyranov S.
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| Том 53, № 12 (2019) |
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy |
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Levin R., Vlasov A., Smirnov A., Pushnyi B.
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| Том 52, № 6 (2018) |
High-Sensitivity Photodetector Based on Atomically Thin MoS2 |
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Lavrov S., Shestakova A., Mishina E., Efimenkov Y., Sigov A.
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| Том 51, № 9 (2017) |
High-temperature annealing of macroporous silicon in an inert-gas flow |
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Astrova E., Preobrazhenskiy N., Pavlov S., Voronkov V.
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| Том 51, № 8 (2017) |
High-temperature diffusion of magnesium in dislocation-free silicon |
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Shuman V., Astrov Y., Lodygin A., Portsel L.
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| Том 53, № 11 (2019) |
High-Voltage AlInGaN LED Chips |
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Markov L., Kukushkin M., Pavlyuchenko A., Smirnova I., Itkinson G., Osipov O.
|
| Том 53, № 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation |
|
|
Kyuregyan A.
|
| Том 53, № 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: II. Theory |
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|
Kyuregyan A.
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| 526 - 550 из 1443 результатов |
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