| Шығарылым |
Атауы |
Файл |
| Том 53, № 4 (2019) |
Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device |
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Jyoti Chaudhary ., Choudhary S., Negi C., Gupta S., Verma A.
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| Том 51, № 13 (2017) |
Electrical Conductivity of Film Composites Based on Polyvinyledene Fluoride with Carbon Nanotubes |
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Solnyshkin A., Kislova I., Belov A., Sysa A., Stroganov A., Shevjakov V., Silibin M., Mihalchan A., Lysenko A.
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| Том 50, № 8 (2016) |
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma |
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Abdullin K., Gabdullin M., Gritsenko L., Ismailov D., Kalkozova Z., Kumekov S., Mukash Z., Sazonov A., Terukov E.
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| Том 50, № 9 (2016) |
Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors |
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Kaminskii V., Kazanin M., Romanova M., Kamenskaya G., Sharenkova N.
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| Том 52, № 9 (2018) |
Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions |
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Orletskyi I., Ilashchuk M., Solovan M., Maryanchuk P., Parfenyuk O., Maistruk E., Nichyi S.
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| Том 51, № 12 (2017) |
Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode |
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Padma R., Rajagopal Reddy V.
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| Том 51, № 2 (2017) |
Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors |
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Sherchenkov A., Kozyukhin S., Lazarenko P., Babich A., Bogoslovskiy N., Sagunova I., Redichev E.
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| Том 52, № 7 (2018) |
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon |
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Parkhomenko H., Solovan M., Maryanchuk P.
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| Том 52, № 12 (2018) |
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates |
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Alekseev P., Dunaevskiy M., Mikhailov A., Lebedev S., Lebedev A., Ilkiv I., Khrebtov A., Bouravleuv A., Cirlin G.
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| Том 52, № 12 (2018) |
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation |
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Ilin A., Matsukatova A., Forsh P., Vygranenko Y.
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| Том 51, № 6 (2017) |
Electrical properties of ZnSe crystals doped with transition elements |
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Nitsuk Y., Vaksman Y.
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| Том 53, № 13 (2019) |
Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds |
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Voronin A., Serhiienko I., Ashim Y., Kurichenko V., Novitskii A., Inerbaev T., Umetsu R., Khovaylo V.
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| Том 52, № 12 (2018) |
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection |
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Polischuk O., Fateev D., Popov V.
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| Том 52, № 2 (2018) |
Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures |
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Kažukauskas V., Garbačauskas R., Savicki S.
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| Том 52, № 9 (2018) |
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures |
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Orlov M., Volkova N., Ivina N., Orlov L.
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| Том 51, № 9 (2017) |
Electric-field sensor based on a double quantum dot in a microcavity |
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Tsukanov A., Chekmachev V.
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| Том 50, № 2 (2016) |
Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries |
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Astrova E., Li G., Rumyantsev A., Zhdanov V.
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| Том 51, № 13 (2017) |
Electrochemical Deposition of Permalloy Films for Magneto-Semiconductor Microsystems |
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Amelichev V., Polomoshnov S., Nikolaeva N., Tikhonov R., Kupriyanova M.
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| Том 50, № 7 (2016) |
Electrochemical lithiation of silicon with varied crystallographic orientation |
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Astrova E., Rumyantsev A., Li G., Nashchekin A., Kazantsev D., Ber B., Zhdanov V.
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| Том 51, № 7 (2017) |
Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
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Kretova M., Korzhuev M., Avilov E.
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| Том 50, № 11 (2016) |
Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands |
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Shmagin V., Vdovichev S., Morozova E., Novikov A., Shaleev M., Shengurov D., Krasilnik Z.
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| Том 53, № 1 (2019) |
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE |
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Mikhailova M., Ivanov E., Danilov L., Levin R., Andreev I., Kunitsyna E., Yakovlev Y.
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| Том 51, № 2 (2017) |
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K |
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Mynbaev K., Bazhenov N., Semakova A., Mikhailova M., Stoyanov N., Kizhaev S., Molchanov S., Astakhova A., Chernyaev A., Lipsanen H., Bougrov V.
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| Том 50, № 12 (2016) |
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers |
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Baidakova N., Novikov A., Shaleev M., Yurasov D., Morozova E., Shengurov D., Krasilnik Z.
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| Том 50, № 2 (2016) |
Electroluminescence properties of LEDs based on electron-irradiated p-Si |
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Sobolev N., Shtel’makh K., Kalyadin A., Aruev P., Zabrodskiy V., Shek E., Yang D.
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| Нәтижелер 1443 - 326/350 |
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