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卷 50, 编号 5 (2016) Anisotropy of the thermal expansion of CuIn5Se8 single crystals in two structural modifications
Bodnar I.
卷 51, 编号 8 (2017) Anisotropy of the thermopower in higher silicide of transitions metals
Kusnetsova V., Zaitsev V., Solomkin F., Novikov S.
卷 52, 编号 14 (2018) Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure
Levitskii I., Mitrofanov M., Voznyuk G., Nikolaev D., Mizerov M., Evtikhiev V.
卷 51, 编号 1 (2017) Anodes for Li-ion batteries based on p-Si with self-organized macropores
Preobrazhenskiy N., Astrova E., Pavlov S., Voronkov V., Rumyantsev A., Zhdanov V.
卷 53, 编号 2 (2019) Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers
Tyschenko I., Popov I., Spesivtsev E.
卷 51, 编号 4 (2017) Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism
Ulin V., Ulin N., Soldatenkov F.
卷 50, 编号 6 (2016) Anomalous thermoelectric power in Hg3In2Te6 crystals
Grushka O.
卷 51, 编号 12 (2017) Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations
Yurasov D., Drozdov M., Shmagin V., Novikov A.
卷 53, 编号 5 (2019) Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses
Marchenko A., Seregin P., Terukov E., Shakhovich K.
卷 51, 编号 1 (2017) Application of B12N12 and B12P12 as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study
Rad A.
卷 52, 编号 11 (2018) Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation
Puzanov A., Obolenskiy S., Kozlov V.
卷 53, 编号 14 (2019) Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface
Mikoushkin V., Solonitsyna A., Makarevskaya E., Novikov D.
卷 50, 编号 1 (2016) Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry
Makeev M., Ivanov Y., Meshkov S.
卷 50, 编号 12 (2016) Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection
Fedorov G., Stepanova T., Gazaliev A., Gaiduchenko I., Kaurova N., Voronov B., Goltzman G.
卷 51, 编号 1 (2017) Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface
Bekenev V., Zubkova S.
卷 50, 编号 12 (2016) Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
Surovegina E., Demidov E., Drozdov M., Murel A., Khrykin O., Shashkin V., Lobaev M., Gorbachev A., Viharev A., Bogdanov S., Isaev V., Muchnikov A., Chernov V., Radishchev D., Batler D.
卷 51, 编号 3 (2017) Atomic configuration and charge state of hydrogen at dislocations in silicon
Vysotskii N., Loshachenko A., Vyvenko O.
卷 52, 编号 16 (2018) Atomic Force Microscopy Local Oxidation of GeO Thin Films
Astankova K., Kozhukhov A., Gorokhov E., Azarov I., Latyshev A.
卷 52, 编号 16 (2018) Atomic Force Microscopy Study of Monodisperse Carbon Nanoparticles
Muravijova D., Ermakov I., Eurov D., Kirilenko D., Kurdyukov D., Rabchinskii M., Shvidchenko A., Trofimuk A., Baidakova M.
卷 50, 编号 5 (2016) Atomic steps on an ultraflat Si(111) surface upon sublimation
Sitnikov S., Latyshev A., Kosolobov S.
卷 52, 编号 12 (2018) Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+n0n+ Diodes
Ivanov P., Samsonova T., Potapov A.
卷 52, 编号 9 (2018) Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method
Klochko N., Kopach V., Khrypunov G., Korsun V., Lyubov V., Zhadan D., Otchenashko A., Kirichenko M., Khrypunov M.
卷 52, 编号 5 (2018) Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands
Filatov D., Guseinov D., Chalkov V., Denisov S., Shengurov V.
卷 51, 编号 1 (2017) Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices
Zhdanov E., Pogosov A., Budantsev M., Pokhabov D., Bakarov A.
卷 52, 编号 12 (2018) Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate
Tikhov S., Gorshkov O., Antonov I., Tetelbaum D., Mikhaylov A., Belov A., Morozov A., Karakolis P., Dimitrakis P.
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