Lista de artigos

Edição Título Arquivo
Volume 50, Nº 5 (2016) Anisotropy of the thermal expansion of CuIn5Se8 single crystals in two structural modifications
Bodnar I.
Volume 51, Nº 8 (2017) Anisotropy of the thermopower in higher silicide of transitions metals
Kusnetsova V., Zaitsev V., Solomkin F., Novikov S.
Volume 52, Nº 14 (2018) Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure
Levitskii I., Mitrofanov M., Voznyuk G., Nikolaev D., Mizerov M., Evtikhiev V.
Volume 51, Nº 1 (2017) Anodes for Li-ion batteries based on p-Si with self-organized macropores
Preobrazhenskiy N., Astrova E., Pavlov S., Voronkov V., Rumyantsev A., Zhdanov V.
Volume 53, Nº 2 (2019) Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers
Tyschenko I., Popov I., Spesivtsev E.
Volume 51, Nº 4 (2017) Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism
Ulin V., Ulin N., Soldatenkov F.
Volume 50, Nº 6 (2016) Anomalous thermoelectric power in Hg3In2Te6 crystals
Grushka O.
Volume 51, Nº 12 (2017) Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations
Yurasov D., Drozdov M., Shmagin V., Novikov A.
Volume 53, Nº 5 (2019) Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses
Marchenko A., Seregin P., Terukov E., Shakhovich K.
Volume 51, Nº 1 (2017) Application of B12N12 and B12P12 as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study
Rad A.
Volume 52, Nº 11 (2018) Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation
Puzanov A., Obolenskiy S., Kozlov V.
Volume 53, Nº 14 (2019) Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface
Mikoushkin V., Solonitsyna A., Makarevskaya E., Novikov D.
Volume 50, Nº 1 (2016) Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry
Makeev M., Ivanov Y., Meshkov S.
Volume 50, Nº 12 (2016) Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection
Fedorov G., Stepanova T., Gazaliev A., Gaiduchenko I., Kaurova N., Voronov B., Goltzman G.
Volume 51, Nº 1 (2017) Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface
Bekenev V., Zubkova S.
Volume 50, Nº 12 (2016) Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
Surovegina E., Demidov E., Drozdov M., Murel A., Khrykin O., Shashkin V., Lobaev M., Gorbachev A., Viharev A., Bogdanov S., Isaev V., Muchnikov A., Chernov V., Radishchev D., Batler D.
Volume 51, Nº 3 (2017) Atomic configuration and charge state of hydrogen at dislocations in silicon
Vysotskii N., Loshachenko A., Vyvenko O.
Volume 52, Nº 16 (2018) Atomic Force Microscopy Local Oxidation of GeO Thin Films
Astankova K., Kozhukhov A., Gorokhov E., Azarov I., Latyshev A.
Volume 52, Nº 16 (2018) Atomic Force Microscopy Study of Monodisperse Carbon Nanoparticles
Muravijova D., Ermakov I., Eurov D., Kirilenko D., Kurdyukov D., Rabchinskii M., Shvidchenko A., Trofimuk A., Baidakova M.
Volume 50, Nº 5 (2016) Atomic steps on an ultraflat Si(111) surface upon sublimation
Sitnikov S., Latyshev A., Kosolobov S.
Volume 52, Nº 12 (2018) Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+n0n+ Diodes
Ivanov P., Samsonova T., Potapov A.
Volume 52, Nº 9 (2018) Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method
Klochko N., Kopach V., Khrypunov G., Korsun V., Lyubov V., Zhadan D., Otchenashko A., Kirichenko M., Khrypunov M.
Volume 52, Nº 5 (2018) Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands
Filatov D., Guseinov D., Chalkov V., Denisov S., Shengurov V.
Volume 51, Nº 1 (2017) Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices
Zhdanov E., Pogosov A., Budantsev M., Pokhabov D., Bakarov A.
Volume 52, Nº 12 (2018) Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate
Tikhov S., Gorshkov O., Antonov I., Tetelbaum D., Mikhaylov A., Belov A., Morozov A., Karakolis P., Dimitrakis P.
51 - 75 de 1443 resultados << < 1 2 3 4 5 6 7 8 9 10 > >> 

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