| Выпуск |
Название |
Файл |
| Том 50, № 5 (2016) |
Anisotropy of the thermal expansion of CuIn5Se8 single crystals in two structural modifications |
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Bodnar I.
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| Том 51, № 8 (2017) |
Anisotropy of the thermopower in higher silicide of transitions metals |
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Kusnetsova V., Zaitsev V., Solomkin F., Novikov S.
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| Том 52, № 14 (2018) |
Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure |
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Levitskii I., Mitrofanov M., Voznyuk G., Nikolaev D., Mizerov M., Evtikhiev V.
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| Том 51, № 1 (2017) |
Anodes for Li-ion batteries based on p-Si with self-organized macropores |
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Preobrazhenskiy N., Astrova E., Pavlov S., Voronkov V., Rumyantsev A., Zhdanov V.
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| Том 53, № 2 (2019) |
Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers |
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Tyschenko I., Popov I., Spesivtsev E.
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| Том 51, № 4 (2017) |
Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism |
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Ulin V., Ulin N., Soldatenkov F.
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| Том 50, № 6 (2016) |
Anomalous thermoelectric power in Hg3In2Te6 crystals |
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Grushka O.
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| Том 51, № 12 (2017) |
Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations |
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Yurasov D., Drozdov M., Shmagin V., Novikov A.
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| Том 53, № 5 (2019) |
Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses |
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Marchenko A., Seregin P., Terukov E., Shakhovich K.
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| Том 51, № 1 (2017) |
Application of B12N12 and B12P12 as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study |
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Rad A.
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| Том 52, № 11 (2018) |
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation |
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Puzanov A., Obolenskiy S., Kozlov V.
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| Том 53, № 14 (2019) |
Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface |
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Mikoushkin V., Solonitsyna A., Makarevskaya E., Novikov D.
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| Том 50, № 1 (2016) |
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry |
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Makeev M., Ivanov Y., Meshkov S.
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| Том 50, № 12 (2016) |
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection |
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Fedorov G., Stepanova T., Gazaliev A., Gaiduchenko I., Kaurova N., Voronov B., Goltzman G.
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| Том 51, № 1 (2017) |
Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface |
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Bekenev V., Zubkova S.
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| Том 50, № 12 (2016) |
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron |
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Surovegina E., Demidov E., Drozdov M., Murel A., Khrykin O., Shashkin V., Lobaev M., Gorbachev A., Viharev A., Bogdanov S., Isaev V., Muchnikov A., Chernov V., Radishchev D., Batler D.
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| Том 51, № 3 (2017) |
Atomic configuration and charge state of hydrogen at dislocations in silicon |
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Vysotskii N., Loshachenko A., Vyvenko O.
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| Том 52, № 16 (2018) |
Atomic Force Microscopy Local Oxidation of GeO Thin Films |
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Astankova K., Kozhukhov A., Gorokhov E., Azarov I., Latyshev A.
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| Том 52, № 16 (2018) |
Atomic Force Microscopy Study of Monodisperse Carbon Nanoparticles |
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Muravijova D., Ermakov I., Eurov D., Kirilenko D., Kurdyukov D., Rabchinskii M., Shvidchenko A., Trofimuk A., Baidakova M.
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| Том 50, № 5 (2016) |
Atomic steps on an ultraflat Si(111) surface upon sublimation |
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Sitnikov S., Latyshev A., Kosolobov S.
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| Том 52, № 12 (2018) |
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes |
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Ivanov P., Samsonova T., Potapov A.
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| Том 52, № 9 (2018) |
Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method |
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Klochko N., Kopach V., Khrypunov G., Korsun V., Lyubov V., Zhadan D., Otchenashko A., Kirichenko M., Khrypunov M.
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| Том 52, № 5 (2018) |
Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands |
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Filatov D., Guseinov D., Chalkov V., Denisov S., Shengurov V.
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| Том 51, № 1 (2017) |
Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices |
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Zhdanov E., Pogosov A., Budantsev M., Pokhabov D., Bakarov A.
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| Том 52, № 12 (2018) |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
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Tikhov S., Gorshkov O., Antonov I., Tetelbaum D., Mikhaylov A., Belov A., Morozov A., Karakolis P., Dimitrakis P.
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| 51 - 75 из 1443 результатов |
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