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卷 53, 编号 11 (2019) Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films
Volochaev M., Kalinin Y., Kashirin M., Makagonov V., Pankov S., Bassarab V.
卷 53, 编号 11 (2019) Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System
Isayev A., Mekhtiyeva S., Mammadova H., Alekberov R.
卷 50, 编号 1 (2016) Structure and optical properties of ZnO with silver nanoparticles
Lyadov N., Gumarov A., Kashapov R., Noskov A., Valeev V., Nuzhdin V., Bazarov V., Khaibullin R., Faizrakhmanov I.
卷 53, 编号 3 (2019) Structure and Properties of Gallium-Oxide Films Produced by High-Frequency Magnetron-Assisted Deposition
Kalygina V., Lygdenova T., Novikov V., Petrova Y., Tsymbalov A., Yaskevich T.
卷 51, 编号 13 (2017) Structure and Properties of Nanostructured YBa2Cu3O7–δ, BiFeO3, and Fe3O4
Gadzhimagomedov S., Alikhanov N., Emirov R., Palchaev D., Murlieva Z., Rabadanov M., Sadykov S., Khamidov M., Hashafa A.
卷 51, 编号 3 (2017) Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition
Kopach V., Klepikova K., Klochko N., Khrypunov G., Korsun V., Lyubov V., Kirichenko M., Kopach A.
卷 52, 编号 7 (2018) Structure and Properties of Thin Graphite-Like Films Produced by Magnetron-Assisted Sputtering
Vinogradov A., Grudinkin S., Besedina N., Koniakhin S., Rabchinskii M., Eidelman E., Golubev V.
卷 53, 编号 3 (2019) Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of 132Xe26+ Ions with Energy of 167 MeV
Privezentsev V., Kulikauskas V., Skuratov V., Zilova O., Burmistrov A., Presnyakov M., Goryachev A.
卷 53, 编号 6 (2019) Structure and Thermoelectric Properties of CoSi-Based Film Composites
Kuznetsova V., Novikov S., Nichenametla C., Calvo J., Wagner-Reetz M.
卷 51, 编号 8 (2017) Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method
Demcheglo V., Voronin A., Tabachkova N., Bublik V., Ponomaryov V.
卷 51, 编号 7 (2017) Structure of bismuth films obtained using an array of identically oriented single-crystal bismuth islands preliminarily grown on a substrate
Grabov V., Demidov E., Ivanova E., Kablukova N., Krushelnitckii A., Senkevich S.
卷 53, 编号 11 (2019) Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity
Garibova S., Isayev A., Mekhtiyeva S., Atayeva S.
卷 51, 编号 7 (2017) Structure of the Cu2Se compound produced by different methods
Ivanov A., Sorokin A., Panchenko V., Tarasova I., Tabachkova N., Bublik V., Akchurin R.
卷 53, 编号 7 (2019) Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint
Prokofieva L., Konstantinov P.
卷 51, 编号 6 (2017) Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data
Orekhov A., Kamilov T., Ibragimova B., Ivakin G., Klechkovskaya V.
卷 53, 编号 9 (2019) Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A., Pavlov D., Shengurov V., Denisov S., Chalkov V., Baidus N., Rykov A., Kryukov R.
卷 51, 编号 12 (2017) Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method
El Ouchdi A., Bouazza B., Belhadji Y., Massoum N.
卷 52, 编号 7 (2018) Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure
Tregulov V., Litvinov V., Ermachikhin A.
卷 52, 编号 7 (2018) Study of Deep Levels in a HIT Solar Cell
Shilina D., Litvinov V., Maslov A., Mishustin V., Terukov E., Titov A., Vikhrov S., Vishnyakov N., Gudzev V., Ermachikhin A.
卷 50, 编号 7 (2016) Study of deep levels in GaAs p–i–n structures
Sobolev M., Soldatenkov F., Kozlov V.
卷 51, 编号 2 (2017) Study of silicon doped with zinc ions and annealed in oxygen
Privezentsev V., Kirilenko E., Goryachev A., Batrakov A.
卷 53, 编号 16 (2019) Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods
Astankova K., Gorokhov E., Azarov I., Volodin V., Latyshev A.
卷 53, 编号 9 (2019) Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm
Utochkin V., Aleshkin V., Dubinov A., Gavrilenko V., Kulikov N., Fadeev M., Rumyantsev V., Mikhailov N., Dvoretskii S., Morozov S.
卷 50, 编号 5 (2016) Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase
Alpatov A., Vikhrov S., Kazanskii A., Lyaskovskii V., Rybin N., Rybina N., Forsh P.
卷 51, 编号 8 (2017) Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)
Davydov V., Usachov D., Lebedev S., Smirnov A., Levitskii V., Eliseyev I., Alekseev P., Dunaevskiy M., Vilkov O., Rybkin A., Lebedev A.
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