| Шығарылым |
Атауы |
Файл |
| Том 50, № 11 (2016) |
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence |
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Kosarev A., Chaldyshev V., Preobrazhenskii V., Putyato M., Semyagin B.
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| Том 53, № 4 (2019) |
Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures |
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Nabiullin I., Gadiev R., Lachinov A.
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| Том 51, № 1 (2017) |
Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate |
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Nekorkin S., Zvonkov B., Baidus N., Dikareva N., Vikhrova O., Afonenko A., Ushakov D.
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| Том 51, № 12 (2017) |
Effect of Ag in CdSe thin films prepared using thermal evaporation |
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Santhosh T., Bangera K., Shivakumar G.
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| Том 51, № 8 (2017) |
Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) |
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Lebedev M., Lvova T., Pavlov S., Sedova I.
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| Том 50, № 8 (2016) |
Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si |
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Karabeshkin K., Karaseov P., Titov A.
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| Том 51, № 6 (2017) |
Effect of anion and cation substitution in tungsten disulfide and tungsten diselenide on conductivity and thermoelectric power |
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Yakovleva G., Romanenko A., Berdinsky A., Kuznetsov V., Ledneva A., Artemkina S., Fedorov V.
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| Том 53, № 16 (2019) |
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |
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Sakharov A., Kaliteevskii M., Voznyuk G., Levitskii I., Mitrofanov M., Tsatsulnikov A., Lundin W., Rodin S., Usov S., Evtikhiev V.
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| Том 53, № 8 (2019) |
Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures |
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Lunina M., Lunin L., Alfimova D., Pashchenko A., Danilina E., Nefedov V.
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| Том 52, № 7 (2018) |
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation |
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Tereshchenko A., Korolev D., Mikhaylov A., Belov A., Nikolskaya A., Pavlov D., Tetelbaum D., Steinman E.
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| Том 50, № 5 (2016) |
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide |
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Il’in A., Fantina N., Martyshov M., Forsh P., Chizhov A., Rumyantseva M., Gaskov A., Kashkarov P.
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| Том 52, № 6 (2018) |
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution |
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Kalinkin I., Kukushkin S., Osipov A.
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| Том 52, № 9 (2018) |
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |
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Seredin P., Lenshin A., Fedyukin A., Goloshchapov D., Lukin A., Arsentyev I., Zhabotinsky A.
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| Том 50, № 7 (2016) |
Effect of coulomb correlations on luminescence and absorption in compensated semiconductors |
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Bogoslovskiy N., Petrov P., Ivánov Y., Averkiev N., Tsendin K.
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| Том 52, № 7 (2018) |
Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency |
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Bochkareva N., Shreter Y.
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| Том 52, № 8 (2018) |
Effect of Deep Centers on the Statistical Delay of Microplasma Breakdown in Gallium-Arsenide Light-Emitting Diodes |
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Ionychev V., Shesterkina A.
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| Том 51, № 6 (2017) |
Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering |
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Kobziev V., Zakirova R., Kostenkov N., Krylov P., Fedotova I.
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| Том 53, № 13 (2019) |
Effect of Deposition Time on Structural, Morphological and Optical Properties of PVA Capped SnS Films Grown by CBD Process |
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Devi P., Reddy G., Reddy K.
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| Том 52, № 2 (2018) |
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers |
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Sobolev M., Soldatenkov F.
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| Том 51, № 7 (2017) |
Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals |
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Abdullayev N., Jafarli K., Aliguliyeva K., Aliyeva L., Kahramanov S., Nemov S.
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| Том 51, № 11 (2017) |
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures |
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Degtyarev V., Khazanova S., Konakov A.
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| Том 51, № 8 (2017) |
Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions |
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Gavrilin I., Gromov D., Dronov A., Dubkov S., Volkov R., Trifonov A., Borgardt N., Gavrilov S.
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| Том 53, № 4 (2019) |
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes |
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Dobrov V., Kozlovski V., Mescheryakov A., Usychenko V., Chernova A., Shabunina E., Shmidt N.
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| Том 52, № 7 (2018) |
Effect of Electron–Phonon Interaction on the Conductivity and Work Function of Epitaxial Graphene |
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Davydov S.
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| Том 51, № 9 (2017) |
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs |
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Danilov L., Mikhailova M., Andreev I., Zegrya G.
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| Нәтижелер 1443 - 226/250 |
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