| Шығарылым |
Атауы |
Файл |
| Том 52, № 5 (2018) |
Biexciton Binding Energy in Spherical Quantum Dots with Γ8 Valence Band |
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Golovatenko A., Semina M., Rodina A., Shubina T.
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| Том 52, № 1 (2018) |
Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates |
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Nadtochiy A., Mintairov S., Kalyuzhnyy N., Rouvimov S., Nevedomskii V., Maximov M., Zhukov A.
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| Том 50, № 5 (2016) |
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
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Popov V., Ilnitskii M., Zhanaev E., Myakon’kich A., Rudenko K., Glukhov A.
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| Том 52, № 12 (2018) |
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures |
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Spirin K., Gaponova D., Marem’yanin K., Rumyantsev V., Gavrilenko V., Mikhailov N., Dvoretsky S.
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| Том 53, № 6 (2019) |
Bismuth-Telluride-Based Radiation Thermopiles Prepared by Pulsed Laser Deposition |
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Shupenev A., Korshunov I., Iliin A., Osipkov A., Grigoryants A.
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| Том 53, № 1 (2019) |
Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining |
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Tyschenko I., Zhanaev E., Popov V.
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| Том 53, № 11 (2019) |
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions |
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Davydov V., Jmerik V., Roginskii E., Kitaev Y., Beltukov Y., Smirnov M., Nechaev D., Smirnov A., Eliseyev I., Brunkov P., Ivanov S.
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| Том 50, № 12 (2016) |
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs |
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Ushanov V., Chaldyshev V., Preobrazhenskii V., Putyato M., Semyagin B.
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| Том 52, № 15 (2018) |
Characteristics of Amorphous As2S3 Semiconductor Films Obtained via Spin Coating |
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Hang Thi Nguyen ., Yakubov A., Lazarenko P., Volkova A., Sherchenkov A., Kozyukhin S.
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| Том 52, № 5 (2018) |
Calculation of Energy States of Excitons in Square Quantum Wells |
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Belov P.
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| Том 52, № 11 (2018) |
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers |
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Kozlov D., Rumyantsev V., Morozov S., Kadykov A., Fadeev M., Hübers H., Gavrilenko V.
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| Том 52, № 9 (2018) |
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions |
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Okulich E., Okulich V., Tetelbaum D.
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| Том 50, № 9 (2016) |
Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide |
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Altuhov V., Kasyanenko I., Sankin A., Bilalov B., Sigov A.
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| Том 51, № 6 (2017) |
Calculation of the thermal conductivity of nanostructured Bi2Te3 with the real phonon spectrum taken into account |
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Bulat L., Pshenay-Severin D., Osvenskii V., Parkhomenko Y.
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| Том 51, № 11 (2017) |
Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy |
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Murel A., Shmagin V., Krukov V., Strelchenko S., Surovegina E., Shashkin V.
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| Том 53, № 14 (2019) |
Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting |
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Emelyanov V., Pokrovskiy P., Kalyuzhnyy N., Nakhimovich M., Shvarts M.
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| Том 53, № 12 (2019) |
Carbon Nanotubes and Graphene Powder based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors |
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Muhammad Tariq Saeed Chani ., Karimov K., Asiri A.
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| Том 53, № 4 (2019) |
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies |
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Bazhenov N., Mynbaev K., Semakova A., Zegrya G.
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| Том 50, № 8 (2016) |
Carrier velocity effect on carbon nanotube Schottky contact |
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Fathi A., Ahmadi M., Ismail R.
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| Том 50, № 12 (2016) |
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures |
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Varavin V., Vasilyev V., Guzev A., Dvoretsky S., Kovchavtsev A., Marin D., Sabinina I., Sidorov Y., Sidorov G., Tsarenko A., Yakushev M.
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| Том 51, № 8 (2017) |
CeB6 thin films produced on different substrates by electron-beam deposition |
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Kuzanyan A., Kuzanyan A., Badalyan G., Petrosyan S., Vardanyan V., Gurin V., Volkov M., Pilosyan S.
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| Том 52, № 2 (2018) |
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |
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Ratnikov V., Sheglov M., Ber B., Kazantsev D., Osinnykh I., Malin T., Zhuravlev K.
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| Том 50, № 8 (2016) |
Changes in the conductivity of lead-selenide thin films after plasma etching |
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Zimin S., Amirov I., Naumov V.
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| Том 53, № 11 (2019) |
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching |
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Levitskii Y., Mitrofanov M., Voznyuk G., Nikolayev D., Mizerov M., Evtikhiev V.
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| Том 51, № 9 (2017) |
Characteristic properties of macroporous silicon sintering in an argon atmosphere |
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Astrova E., Preobrazhenskiy N., Pavlov S., Voronkov V.
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| Нәтижелер 1443 - 76/100 |
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