| Issue |
Title |
File |
| Vol 52, No 12 (2018) |
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates |
(Eng)
|
|
Samartsev I.V., Nekorkin S.M., Zvonkov B.N., Aleshkin V.Y., Dubinov A.A., Pashenkin I.J., Dikareva N.V., Chigineva A.B.
|
| Vol 52, No 12 (2018) |
Solar Cell Based on Core/Shell Nanowires |
(Eng)
|
|
Sibirev N.V., Kotlyar K.P., Koryakin A.A., Shtrom I.V., Ubiivovk E.V., Soshnikov I.P., Reznik R.R., Bouravleuv A.D., Cirlin G.E.
|
| Vol 52, No 12 (2018) |
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation |
(Eng)
|
|
Tsyplenkov V.V., Shastin V.N.
|
| Vol 52, No 12 (2018) |
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field |
(Eng)
|
|
Sablikov V.A., Tkach Y.Y.
|
| Vol 52, No 12 (2018) |
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures |
(Eng)
|
|
Spirin K.E., Gaponova D.M., Marem’yanin K.V., Rumyantsev V.V., Gavrilenko V.I., Mikhailov N.N., Dvoretsky S.A.
|
| Vol 52, No 12 (2018) |
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors |
(Eng)
|
|
Maremyanin K.V., Ikonnikov A.V., Bovkun L.S., Rumyantsev V.V., Chizhevskii E.G., Zasavitskii I.I., Gavrilenko V.I.
|
| Vol 52, No 12 (2018) |
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current |
(Eng)
|
|
Akimov A.N., Klimov A.E., Epov V.S.
|
| Vol 52, No 12 (2018) |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
(Eng)
|
|
Mansurov V.G., Galitsyn Y.G., Malin T.V., Teys S.A., Fedosenko E.V., Kozhukhov A.S., Zhuravlev K.S., Cora I., Pécz B.
|
| Vol 52, No 12 (2018) |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
(Eng)
|
|
Venediktov M.M., Dukov D.I., Krevskiy M.A., Metelkin I.O., Chukov G.V., Elesin V.V., Obolensky S.V., Bozhen’kina A.D., Tarasova E.A., Fefelov A.G.
|
| Vol 52, No 12 (2018) |
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |
(Eng)
|
|
Gorshkov A.P., Volkova N.S., Pavlov D.A., Usov Y.V., Istomin L.A., Levichev S.B.
|
| Vol 52, No 12 (2018) |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
(Eng)
|
|
Mizerov A.M., Timoshnev S.N., Sobolev M.S., Nikitina E.V., Shubina K.Y., Berezovskaia T.N., Shtrom I.V., Bouravleuv A.D.
|
| Vol 52, No 12 (2018) |
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection |
(Eng)
|
|
Polischuk O.V., Fateev D.V., Popov V.V.
|
| Vol 52, No 12 (2018) |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
(Eng)
|
|
Tikhov S.V., Gorshkov O.N., Antonov I.N., Tetelbaum D.I., Mikhaylov A.N., Belov A.I., Morozov A.I., Karakolis P., Dimitrakis P.
|
| Vol 52, No 12 (2018) |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
(Eng)
|
|
Baidus N.V., Yunin P.A., Shaleev M.V., Reunov D.G., Rykov A.V., Novikov A.V., Nekorkin S.M., Kudryavtsev K.E., Krasilnik Z.F., Dubinov A.A., Aleshkin V.Y., Yurasov D.V.
|
| Vol 52, No 12 (2018) |
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
(Eng)
|
|
Gudina S.V., Vasil’evskii I.S., Yakunin M.V., Shelushinina N.G., Podgornykh S.M., Savelyev A.P., Neverov V.N., Ilchenko E.I., Arapov Y.G., Vinichenko A.N.
|
| Vol 52, No 12 (2018) |
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering |
(Eng)
|
|
Erofeeva I.V., Dorokhin M.V., Zdoroveyshchev A.V., Kuznetsov Y.M., Popov A.A., Lantsev E.A., Boryakov A.V., Kotomina V.E.
|
| Vol 52, No 11 (2018) |
Spinodal Decomposition in InSb/AlAs Heterostructures |
(Eng)
|
|
Abramkin D.S., Bakarov A.K., Gutakovskii A.K., Shamirzaev T.S.
|
| Vol 52, No 11 (2018) |
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma |
(Eng)
|
|
Okhapkin A.I., Yunin P.A., Drozdov M.N., Kraev S.A., Skorokhodov E.V., Shashkin V.I.
|
| Vol 52, No 11 (2018) |
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures |
(Eng)
|
|
Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Antonov I.N.
|
| Vol 52, No 11 (2018) |
Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation |
(Eng)
|
|
Khananova A.V., Obolensky S.V.
|
| Vol 52, No 11 (2018) |
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase |
(Eng)
|
|
Gudina S.V., Bogolyubskii A.S., Neverov V.N., Shelushinina N.G., Yakunin M.V.
|
| Vol 52, No 11 (2018) |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
(Eng)
|
|
Abramkin D.S., Petrushkov M.O., Putyato M.A., Semyagin B.R., Shamirzaev T.S.
|
| Vol 52, No 11 (2018) |
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation |
(Eng)
|
|
Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
|
| Vol 52, No 11 (2018) |
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut |
(Eng)
|
|
Drozdov Y.N., Khrikin O.I., Yunin P.A.
|
| Vol 52, No 11 (2018) |
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire |
(Eng)
|
|
Yunin P.A., Drozdov Y.N., Khrykin O.I., Grigoryev V.A.
|
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