| Edição |
Título |
Arquivo |
| Volume 52, Nº 12 (2018) |
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation |
(Eng)
|
|
Tsyplenkov V., Shastin V.
|
| Volume 52, Nº 12 (2018) |
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field |
(Eng)
|
|
Sablikov V., Tkach Y.
|
| Volume 52, Nº 12 (2018) |
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures |
(Eng)
|
|
Spirin K., Gaponova D., Marem’yanin K., Rumyantsev V., Gavrilenko V., Mikhailov N., Dvoretsky S.
|
| Volume 52, Nº 12 (2018) |
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors |
(Eng)
|
|
Maremyanin K., Ikonnikov A., Bovkun L., Rumyantsev V., Chizhevskii E., Zasavitskii I., Gavrilenko V.
|
| Volume 52, Nº 12 (2018) |
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current |
(Eng)
|
|
Akimov A., Klimov A., Epov V.
|
| Volume 52, Nº 12 (2018) |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
(Eng)
|
|
Mansurov V., Galitsyn Y., Malin T., Teys S., Fedosenko E., Kozhukhov A., Zhuravlev K., Cora I., Pécz B.
|
| Volume 52, Nº 12 (2018) |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
(Eng)
|
|
Venediktov M., Dukov D., Krevskiy M., Metelkin I., Chukov G., Elesin V., Obolensky S., Bozhen’kina A., Tarasova E., Fefelov A.
|
| Volume 52, Nº 12 (2018) |
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |
(Eng)
|
|
Gorshkov A., Volkova N., Pavlov D., Usov Y., Istomin L., Levichev S.
|
| Volume 52, Nº 12 (2018) |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
(Eng)
|
|
Mizerov A., Timoshnev S., Sobolev M., Nikitina E., Shubina K., Berezovskaia T., Shtrom I., Bouravleuv A.
|
| Volume 52, Nº 12 (2018) |
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection |
(Eng)
|
|
Polischuk O., Fateev D., Popov V.
|
| Volume 52, Nº 12 (2018) |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
(Eng)
|
|
Tikhov S., Gorshkov O., Antonov I., Tetelbaum D., Mikhaylov A., Belov A., Morozov A., Karakolis P., Dimitrakis P.
|
| Volume 52, Nº 12 (2018) |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
(Eng)
|
|
Baidus N., Yunin P., Shaleev M., Reunov D., Rykov A., Novikov A., Nekorkin S., Kudryavtsev K., Krasilnik Z., Dubinov A., Aleshkin V., Yurasov D.
|
| Volume 52, Nº 12 (2018) |
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
(Eng)
|
|
Gudina S., Vasil’evskii I., Yakunin M., Shelushinina N., Podgornykh S., Savelyev A., Neverov V., Ilchenko E., Arapov Y., Vinichenko A.
|
| Volume 52, Nº 12 (2018) |
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering |
(Eng)
|
|
Erofeeva I., Dorokhin M., Zdoroveyshchev A., Kuznetsov Y., Popov A., Lantsev E., Boryakov A., Kotomina V.
|
| Volume 52, Nº 12 (2018) |
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates |
(Eng)
|
|
Samartsev I., Nekorkin S., Zvonkov B., Aleshkin V., Dubinov A., Pashenkin I., Dikareva N., Chigineva A.
|
| Volume 52, Nº 12 (2018) |
Solar Cell Based on Core/Shell Nanowires |
(Eng)
|
|
Sibirev N., Kotlyar K., Koryakin A., Shtrom I., Ubiivovk E., Soshnikov I., Reznik R., Bouravleuv A., Cirlin G.
|
| Volume 52, Nº 11 (2018) |
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase |
(Eng)
|
|
Gudina S., Bogolyubskii A., Neverov V., Shelushinina N., Yakunin M.
|
| Volume 52, Nº 11 (2018) |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
(Eng)
|
|
Abramkin D., Petrushkov M., Putyato M., Semyagin B., Shamirzaev T.
|
| Volume 52, Nº 11 (2018) |
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation |
(Eng)
|
|
Puzanov A., Obolenskiy S., Kozlov V.
|
| Volume 52, Nº 11 (2018) |
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut |
(Eng)
|
|
Drozdov Y., Khrikin O., Yunin P.
|
| Volume 52, Nº 11 (2018) |
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire |
(Eng)
|
|
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
|
| Volume 52, Nº 11 (2018) |
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates |
(Eng)
|
|
Kudryatvsev K., Dubinov A., Aleshkin V., Yurasov D., Gorlachuk P., Ryaboshtan Y., Marmalyuk A., Novikov A., Krasilnik Z.
|
| Volume 52, Nº 11 (2018) |
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon |
(Eng)
|
|
Cirlin G., Reznik R., Samsonenko Y., Khrebtov A., Kotlyar K., Ilkiv I., Soshnikov I., Kirilenko D., Kryzhanovskaya N.
|
| Volume 52, Nº 11 (2018) |
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond |
(Eng)
|
|
Bekin N.
|
| Volume 52, Nº 11 (2018) |
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region |
(Eng)
|
|
Morozov K., Ivanov K., Selenin N., Mikhrin S., de Sa Pereira D., Menelaou C., Monkman A., Kaliteevski M.
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