Issue |
Title |
File |
Vol 52, No 12 (2018) |
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures |
(Eng)
|
Spirin K.E., Gaponova D.M., Marem’yanin K.V., Rumyantsev V.V., Gavrilenko V.I., Mikhailov N.N., Dvoretsky S.A.
|
Vol 52, No 12 (2018) |
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors |
(Eng)
|
Maremyanin K.V., Ikonnikov A.V., Bovkun L.S., Rumyantsev V.V., Chizhevskii E.G., Zasavitskii I.I., Gavrilenko V.I.
|
Vol 52, No 12 (2018) |
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current |
(Eng)
|
Akimov A.N., Klimov A.E., Epov V.S.
|
Vol 52, No 12 (2018) |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
(Eng)
|
Mansurov V.G., Galitsyn Y.G., Malin T.V., Teys S.A., Fedosenko E.V., Kozhukhov A.S., Zhuravlev K.S., Cora I., Pécz B.
|
Vol 52, No 12 (2018) |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
(Eng)
|
Venediktov M.M., Dukov D.I., Krevskiy M.A., Metelkin I.O., Chukov G.V., Elesin V.V., Obolensky S.V., Bozhen’kina A.D., Tarasova E.A., Fefelov A.G.
|
Vol 52, No 12 (2018) |
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |
(Eng)
|
Gorshkov A.P., Volkova N.S., Pavlov D.A., Usov Y.V., Istomin L.A., Levichev S.B.
|
Vol 52, No 12 (2018) |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
(Eng)
|
Mizerov A.M., Timoshnev S.N., Sobolev M.S., Nikitina E.V., Shubina K.Y., Berezovskaia T.N., Shtrom I.V., Bouravleuv A.D.
|
Vol 52, No 12 (2018) |
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection |
(Eng)
|
Polischuk O.V., Fateev D.V., Popov V.V.
|
Vol 52, No 12 (2018) |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
(Eng)
|
Tikhov S.V., Gorshkov O.N., Antonov I.N., Tetelbaum D.I., Mikhaylov A.N., Belov A.I., Morozov A.I., Karakolis P., Dimitrakis P.
|
Vol 52, No 12 (2018) |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
(Eng)
|
Baidus N.V., Yunin P.A., Shaleev M.V., Reunov D.G., Rykov A.V., Novikov A.V., Nekorkin S.M., Kudryavtsev K.E., Krasilnik Z.F., Dubinov A.A., Aleshkin V.Y., Yurasov D.V.
|
Vol 52, No 12 (2018) |
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
(Eng)
|
Gudina S.V., Vasil’evskii I.S., Yakunin M.V., Shelushinina N.G., Podgornykh S.M., Savelyev A.P., Neverov V.N., Ilchenko E.I., Arapov Y.G., Vinichenko A.N.
|
Vol 52, No 12 (2018) |
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering |
(Eng)
|
Erofeeva I.V., Dorokhin M.V., Zdoroveyshchev A.V., Kuznetsov Y.M., Popov A.A., Lantsev E.A., Boryakov A.V., Kotomina V.E.
|
Vol 52, No 12 (2018) |
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates |
(Eng)
|
Samartsev I.V., Nekorkin S.M., Zvonkov B.N., Aleshkin V.Y., Dubinov A.A., Pashenkin I.J., Dikareva N.V., Chigineva A.B.
|
Vol 52, No 12 (2018) |
Solar Cell Based on Core/Shell Nanowires |
(Eng)
|
Sibirev N.V., Kotlyar K.P., Koryakin A.A., Shtrom I.V., Ubiivovk E.V., Soshnikov I.P., Reznik R.R., Bouravleuv A.D., Cirlin G.E.
|
Vol 52, No 12 (2018) |
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation |
(Eng)
|
Tsyplenkov V.V., Shastin V.N.
|
Vol 52, No 12 (2018) |
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field |
(Eng)
|
Sablikov V.A., Tkach Y.Y.
|
Vol 52, No 11 (2018) |
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire |
(Eng)
|
Yunin P.A., Drozdov Y.N., Khrykin O.I., Grigoryev V.A.
|
Vol 52, No 11 (2018) |
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates |
(Eng)
|
Kudryatvsev K.E., Dubinov A.A., Aleshkin V.Y., Yurasov D.V., Gorlachuk P.V., Ryaboshtan Y.L., Marmalyuk A.A., Novikov A.V., Krasilnik Z.F.
|
Vol 52, No 11 (2018) |
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon |
(Eng)
|
Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kirilenko D.A., Kryzhanovskaya N.V.
|
Vol 52, No 11 (2018) |
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond |
(Eng)
|
Bekin N.A.
|
Vol 52, No 11 (2018) |
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region |
(Eng)
|
Morozov K.M., Ivanov K.A., Selenin N., Mikhrin S., de Sa Pereira D., Menelaou C., Monkman A.P., Kaliteevski M.A.
|
Vol 52, No 11 (2018) |
Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure |
(Eng)
|
Novodvorsky O.A., Mikhalevsky V.A., Gusev D.S., Lotin A.A., Parshina L.S., Khramova O.D., Cherebylo E.A., Drovosekov A.B., Rylkov V.V., Nikolaev S.N., Chernoglazov K.Y., Maslakov K.I.
|
Vol 52, No 11 (2018) |
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer |
(Eng)
|
Alexeev P.A., Cirlin G.E., Reznik R.R., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Lebedev S.P., Lebedev A.A., Kirilenko D.A.
|
Vol 52, No 11 (2018) |
Study of the Structural and Morphological Properties of HPHT Diamond Substrates |
(Eng)
|
Yunin P.A., Volkov P.V., Drozdov Y.N., Koliadin A.V., Korolev S.A., Radischev D.B., Surovegina E.A., Shashkin V.I.
|
Vol 52, No 11 (2018) |
Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots |
(Eng)
|
Derebezov I.A., Gaisler V.A., Gaisler A.V., Dmitriev D.V., Toropov A.I., von Helversen M., de la Haye C., Bounouar S., Reitzenstein S.
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