| Issue |
Title |
File |
| Vol 53, No 13 (2019) |
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications |
(Eng)
|
|
Chugh N., Kumar M., Bhattacharya M., Gupta R.S.
|
| Vol 53, No 13 (2019) |
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells |
(Eng)
|
|
Chen X., Zhao B., Li S.
|
| Vol 53, No 13 (2019) |
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation |
(Eng)
|
|
Patel S., Kumar D., Chaurasiya N.K., Tripathi S.
|
| Vol 53, No 13 (2019) |
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs |
(Eng)
|
|
Shrey Arvind Singh ., Shweta Tripathi .
|
| Vol 53, No 12 (2019) |
On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges |
(Eng)
|
|
Torkhov N.A., Babak L.I., Kokolov A.A.
|
| Vol 53, No 12 (2019) |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
(Eng)
|
|
Nadtochiy A.M., Shchukin V.A., Cherkashin N., Denneulin T., Zhukov A.E., Maximov M.V., Gordeev N.Y., Payusov A.S., Kulagina M.M., Shernyakov Y.M., Ledentsov N.N.
|
| Vol 53, No 12 (2019) |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
(Eng)
|
|
Karlina L.B., Vlasov A.S., Shvarts M.Z., Soshnikov I.P., Smirnova I.P., Komissarenko F.E., Ankudinov A.V.
|
| Vol 53, No 12 (2019) |
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells |
(Eng)
|
|
Dikareva N.V., Zvonkov B.N., Samartsev I.V., Nekorkin S.M., Baidus N.V., Dubinov A.A.
|
| Vol 53, No 11 (2019) |
High-Voltage AlInGaN LED Chips |
(Eng)
|
|
Markov L.K., Kukushkin M.V., Pavlyuchenko A.S., Smirnova I.P., Itkinson G.V., Osipov O.V.
|
| Vol 53, No 11 (2019) |
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells |
(Eng)
|
|
Mintairov M.A., Evstropov V.V., Mintairov S.A., Shvarts M.Z., Kalyuzhnyy N.A.
|
| Vol 53, No 10 (2019) |
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels |
(Eng)
|
|
Gordeev N.Y., Payusov A.S., Maximov M.V.
|
| Vol 53, No 10 (2019) |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
(Eng)
|
|
Lebedev A.A., Kozlovski V.V., Ivanov P.A., Levinshtein M.E., Zubov A.V.
|
| Vol 53, No 8 (2019) |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
(Eng)
|
|
Blokhin S.A., Kulagina M.M., Guseva Y.A., Mintairov S.A., Kalyuzhnyy N.A., Mozharov A.M., Zubov F.I., Maximov M.V., Zhukov A.E., Moiseev E.I., Kryzhanovskaya N.V.
|
| Vol 53, No 8 (2019) |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
(Eng)
|
|
Blokhin S.A., Bobrov M.A., Blokhin A.A., Kuzmenkov A.G., Maleev N.A., Ustinov V.M., Kolodeznyi E.S., Rochas S.S., Babichev A.V., Novikov I.I., Gladyshev A.G., Karachinsky L.Y., Denisov D.V., Voropaev K.O., Ionov A.S., Egorov A.Y.
|
| Vol 53, No 8 (2019) |
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters |
(Eng)
|
|
Khvostikov V.P., Kalyuzhnyy N.A., Mintairov S.A., Potapovich N.S., Sorokina S.V., Shvarts M.Z.
|
| Vol 53, No 8 (2019) |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
(Eng)
|
|
Abolmasov S.N., Abramov A.S., Semenov A.V., Shakhray I.S., Terukov E.I., Malchukova E.V., Trapeznikova I.N.
|
| Vol 53, No 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation |
(Eng)
|
|
Kyuregyan A.S.
|
| Vol 53, No 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: II. Theory |
(Eng)
|
|
Kyuregyan A.S.
|
| Vol 53, No 7 (2019) |
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
(Eng)
|
|
Korolkov O.M., Kozlovski V.V., Lebedev A.A., Sleptsuk N., Toompuu J., Rang T.
|
| Vol 53, No 6 (2019) |
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation |
(Eng)
|
|
Ivanov P.A., Kudoyarov M.F., Potapov A.S., Samsonova T.P.
|
| Vol 53, No 6 (2019) |
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection |
(Eng)
|
|
Romanov V.V., Belykh I.A., Ivanov E.V., Alekseev P.A., Il’inskaya N.D., Yakovlev Y.P.
|
| Vol 53, No 6 (2019) |
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers |
(Eng)
|
|
Podoskin A.A., Romanovich D.N., Shashkin I.S., Gavrina P.S., Sokolova Z.N., Slipchenko S.O., Pikhtin N.A.
|
| Vol 53, No 6 (2019) |
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer |
(Eng)
|
|
Banshchikov A.G., Illarionov Y.Y., Vexler M.I., Wachter S., Sokolov N.S.
|
| Vol 53, No 6 (2019) |
Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction |
(Eng)
|
|
Shashkina A.S., Hanin S.D.
|
| Vol 53, No 6 (2019) |
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers |
(Eng)
|
|
Kalinina E.V., Violina G.N., Nikitina I.P., Yagovkina M.A., Ivanova E.V., Zabrodski V.V.
|
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