| 期 |
标题 |
文件 |
| 卷 51, 编号 9 (2017) |
Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation |
(Eng)
|
|
Ponomarev D., Khabibullin R., Yachmenev A., Pavlov A., Slapovskiy D., Glinskiy I., Lavrukhin D., Ruban O., Maltsev P.
|
| 卷 51, 编号 9 (2017) |
Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes |
(Eng)
|
|
Royz M., Baranov A., Imenkov A., Burenina D., Pivovarova A., Monakhov A., Grebenshchikova E., Yakovlev Y.
|
| 卷 51, 编号 9 (2017) |
High-voltage MIS-gated GaN transistors |
(Eng)
|
|
Erofeev E., Fedin I., Fedina V., Stepanenko M., Yuryeva A.
|
| 卷 51, 编号 8 (2017) |
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |
(Eng)
|
|
Mnatsakanov T., Tandoev A., Levinshtein M., Yurkov S., Palmour J.
|
| 卷 51, 编号 7 (2017) |
Varistor effect in highly heterogeneous polymer–ZnO systems |
(Eng)
|
|
Kurbanov M., Ahadzade S., Ramazanova I., Dadashov Z., Faradzhzade I.
|
| 卷 51, 编号 7 (2017) |
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers |
(Eng)
|
|
Sokolova Z., Veselov D., Pikhtin N., Tarasov I., Asryan L.
|
| 卷 51, 编号 7 (2017) |
Utilizing nanotechnology and novel materials and concepts for advanced thermoelectric and thermal management technology development |
(Eng)
|
|
Mori T.
|
| 卷 51, 编号 6 (2017) |
On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects |
(Eng)
|
|
Mnatsakanov T., Levinshtein M., Shuman V., Seredin B.
|
| 卷 51, 编号 6 (2017) |
Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold |
(Eng)
|
|
Gorbatyuk A., Ivanov B.
|
| 卷 51, 编号 6 (2017) |
n-ZnO/p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films |
(Eng)
|
|
Klochko N., Kopach V., Khrypunov G., Korsun V., Volkova N., Lyubov V., Kirichenko M., Kopach A., Zhadan D., Otchenashko A.
|
| 卷 51, 编号 5 (2017) |
Laser (λ = 809 nm) power converter based on GaAs |
(Eng)
|
|
Khvostikov V., Sorokina S., Potapovich N., Khvostikova O., Timoshina N.
|
| 卷 51, 编号 5 (2017) |
Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode |
(Eng)
|
|
Gusev A., Lyubutin S., Rukin S., Tsyranov S.
|
| 卷 51, 编号 5 (2017) |
Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers |
(Eng)
|
|
Senokosov E., Chukita V., Khamidullin R., Cheban V., Odin I., Chukichev M.
|
| 卷 51, 编号 5 (2017) |
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates |
(Eng)
|
|
Aleshkin V., Baidus N., Dubinov A., Krasilnik Z., Nekorkin S., Novikov A., Rykov A., Yurasov D., Yablonskiy A.
|
| 卷 51, 编号 5 (2017) |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
(Eng)
|
|
Karlina L., Vlasov A., Ber B., Kazantsev D., Timoshina N., Kulagina M., Smirnov A.
|
| 卷 51, 编号 4 (2017) |
Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer |
(Eng)
|
|
Mikhailenko I., Orlov A., Serdega B.
|
| 卷 51, 编号 4 (2017) |
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates |
(Eng)
|
|
Galiev G., Pushkarev S., Buriakov A., Bilyk V., Mishina E., Klimov E., Vasil’evskii I., Maltsev P.
|
| 卷 51, 编号 4 (2017) |
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation |
(Eng)
|
|
Ponomarev D., Khabibullin R., Yachmenev A., Maltsev P., Grekhov M., Ilyakov I., Shishkin B., Akhmedzhanov R.
|
| 卷 51, 编号 4 (2017) |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme |
(Eng)
|
|
Khabibullin R., Shchavruk N., Klochkov A., Glinskiy I., Zenchenko N., Ponomarev D., Maltsev P., Zaycev A., Zubov F., Zhukov A., Cirlin G., Alferov Z.
|
| 卷 51, 编号 4 (2017) |
Optimization of vertical cavity lasers with intracavity metal layers |
(Eng)
|
|
Lazarenko A., Ivanov K., Gubaydullin A., Kaliteevski M.
|
| 卷 51, 编号 3 (2017) |
Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure |
(Eng)
|
|
Aliev R., Gajiev G., Gadzhialiev M., Ismailov A., Pirmagomedov Z.
|
| 卷 51, 编号 3 (2017) |
A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum |
(Eng)
|
|
Ionychev V., Shesterkina A.
|
| 卷 51, 编号 3 (2017) |
Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode |
(Eng)
|
|
Ivanov P., Potapov A., Samsonova T., Grekhov I.
|
| 卷 51, 编号 3 (2017) |
AlN/GaN heterostructures for normally-off transistors |
(Eng)
|
|
Zhuravlev K., Malin T., Mansurov V., Tereshenko O., Abgaryan K., Reviznikov D., Zemlyakov V., Egorkin V., Parnes Y., Tikhomirov V., Prosvirin I.
|
| 卷 51, 编号 2 (2017) |
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures |
(Eng)
|
|
Zakgeim A., Il’inskaya N., Karandashev S., Lavrov A., Matveev B., Remennyy M., Stus’ N., Usikova A., Cherniakov A.
|
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