| Issue |
Title |
File |
| Vol 45, No 8-9 (2016) |
Influence of the yttria dopant on the structure and properties of (ZrO2)0.91–x(Sc2O3)0.09(Y2O3)х (x = 0–0.02) crystals |
|
|
Agarkov D.A., Seryakov S.V., Myzina V.A., Milovich F.O., Lomonova E.E., Kuritsyna I.E., Kulebyakin A.V., Iskhakova L.D., Bublik V.T., Bredikhin S.I., Borik M.A., Tabachkova N.Y.
|
| Vol 46, No 4 (2017) |
Integrated optical-controlled diamond sensors |
|
|
Tsukanov A.V.
|
| Vol 45, No 6 (2016) |
Integration of functional elements of resistive nonvolative memory with 1T-1R topology |
|
|
Negrov D.V., Kirtaev R.V., Kiseleva I.V., Kondratyuk E.V., Shadrin A.V., Zenkevich A.V., Orlov O.M., Gornev E.S., Krasnikov G.Y.
|
| Vol 45, No 7 (2016) |
Intelligent system and electron components for controlling individual heat consumption |
|
|
Shtern Y.I., Kozhevnikov Y.S., Rygalin D.B., Shtern M.Y., Karavaev I.S., Rogachev M.S.
|
| Vol 48, No 4 (2019) |
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology |
|
|
Boruzdina A.B., Gerasimov Y.M., Grigor’ev N.G., Kobylyatskii A.V., Ulanova A.V., Shvetsov-Shilovskii I.I.
|
| Vol 48, No 8 (2019) |
Inverse-Coefficient Problem of Heat Transfer in Layered Nanostructures |
|
|
Abgaryan K.K., Noskov R.G., Reviznikov D.L.
|
| Vol 47, No 3 (2018) |
Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements |
|
|
Benediktov A.S., Shelepin N.A., Ignatov P.V., Mikhailov A.A., Potupchik A.G.
|
| Vol 46, No 1 (2017) |
Investigation into the processes of plasmachemical etching of a photoresist with the help of in situ optical monitoring |
|
|
Volkov P.V., Zelentsov S.V., Korolyov S.A., Luk’yanov A.Y., Okhapkin A.I., Tropanova A.N.
|
| Vol 47, No 5 (2018) |
Investigation of a Capacitor Array of a Composite Capacitive Touch Panel |
|
|
Vlasov A.I., Krivoshein A.I., Terent’ev D.S., Shakhnov V.A.
|
| Vol 47, No 6 (2018) |
Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers |
|
|
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Garmash V.I., Kalyuzhnyi N.A., Mintairov S.A.
|
| Vol 47, No 5 (2018) |
Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism |
|
|
Uvarov I.V., Kupriyanov A.N.
|
| Vol 45, No 8-9 (2016) |
Investigation of ion-electron emission in the process of reactive ion-beam etching of dielectric thin film heterostructures |
|
|
Kurochka A.S., Sergienko A.A., Kurochka S.P.
|
| Vol 46, No 1 (2017) |
Investigation of textured aluminum nitride films prepared by chemical vapor deposition |
|
|
Red’kin A.N., Ryzhova M.V., Yakimov E.E., Roshchupkin D.V.
|
| Vol 46, No 5 (2017) |
Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology |
|
|
Orlov O.M., Voronov D.D., Izmailov R.A., Krasnikov G.Y.
|
| Vol 45, No 3 (2016) |
Investigation of the impact of plasma etching steps on the roughness of the fin FET channel sidewalls in the scheme of hetero-integration |
|
|
Baranov G.V., Milenin A.P., Baklanov M.P.
|
| Vol 47, No 5 (2018) |
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension |
|
|
Myakonkikh A.V., Kuvaev K.Y., Tatarintsev A.A., Orlikovskii N.A., Rudenko K.V., Guschin O.P., Gornev E.S.
|
| Vol 45, No 4 (2016) |
Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition |
|
|
Orlov O.M., Markeev A.M., Zenkevich A.V., Chernikova A.G., Spiridonov M.V., Izmaylov R.A., Gornev E.S.
|
| Vol 46, No 8 (2017) |
Is It not Time to Go back to Tamman’s Tg? |
|
|
Minaev V.S., Parfenov N.M., Timoshenkov S.P., Vassiliev V.P., Kalugin V.V., Mukimov D.Z.
|
| Vol 48, No 7 (2019) |
Junctionless MOS-Transistor with a Low Subthreshold Current |
|
|
Korolev M.A., Klyuchnikov A.S., Efimova D.I.
|
| Vol 45, No 2 (2016) |
Kinetics of growth and plasma destruction of polymer films deposited in a glow discharge in methane |
|
|
Barinov S.M., Efremov A.M.
|
| Vol 45, No 4 (2016) |
Kinetics of neutral particles in HCl and HBr plasmas at low pressures and high electron concentrations |
|
|
Efremov A.M.
|
| Vol 45, No 5 (2016) |
Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide |
|
|
Pivovarenok S.A., Dunaev A.V., Murin D.B.
|
| Vol 47, No 3 (2018) |
Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions |
|
|
Chumakov A.I.
|
| Vol 48, No 3 (2019) |
Layout Synthesis Design Flow for Special-Purpose Reconfigurable Systems-on-a-Chip |
|
|
Gavrilov S.V., Zheleznikov D.A., Zapletina M.A., Khvatov V.M., Chochaev R.Z., Enns V.I.
|
| Vol 48, No 3 (2019) |
Logical C-Element on STG DICE Trigger for Asynchronous Digital Devices Resistant to Single Nuclear Particles |
|
|
Katunin Y.V., Stenin V.Y.
|
| 151 - 175 of 331 Items |
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