| Шығарылым |
Атауы |
Файл |
| Том 45, № 8-9 (2016) |
Influence of the yttria dopant on the structure and properties of (ZrO2)0.91–x(Sc2O3)0.09(Y2O3)х (x = 0–0.02) crystals |
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Agarkov D., Seryakov S., Myzina V., Milovich F., Lomonova E., Kuritsyna I., Kulebyakin A., Iskhakova L., Bublik V., Bredikhin S., Borik M., Tabachkova N.
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| Том 46, № 4 (2017) |
Integrated optical-controlled diamond sensors |
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Tsukanov A.
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| Том 45, № 6 (2016) |
Integration of functional elements of resistive nonvolative memory with 1T-1R topology |
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Negrov D., Kirtaev R., Kiseleva I., Kondratyuk E., Shadrin A., Zenkevich A., Orlov O., Gornev E., Krasnikov G.
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| Том 45, № 7 (2016) |
Intelligent system and electron components for controlling individual heat consumption |
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Shtern Y., Kozhevnikov Y., Rygalin D., Shtern M., Karavaev I., Rogachev M.
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| Том 48, № 4 (2019) |
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology |
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Boruzdina A., Gerasimov Y., Grigor’ev N., Kobylyatskii A., Ulanova A., Shvetsov-Shilovskii I.
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| Том 48, № 8 (2019) |
Inverse-Coefficient Problem of Heat Transfer in Layered Nanostructures |
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Abgaryan K., Noskov R., Reviznikov D.
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| Том 47, № 3 (2018) |
Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements |
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Benediktov A., Shelepin N., Ignatov P., Mikhailov A., Potupchik A.
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| Том 46, № 1 (2017) |
Investigation into the processes of plasmachemical etching of a photoresist with the help of in situ optical monitoring |
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Volkov P., Zelentsov S., Korolyov S., Luk’yanov A., Okhapkin A., Tropanova A.
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| Том 47, № 5 (2018) |
Investigation of a Capacitor Array of a Composite Capacitive Touch Panel |
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Vlasov A., Krivoshein A., Terent’ev D., Shakhnov V.
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| Том 47, № 6 (2018) |
Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers |
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Egorkin V., Zemlyakov V., Nezhentsev A., Garmash V., Kalyuzhnyi N., Mintairov S.
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| Том 47, № 5 (2018) |
Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism |
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Uvarov I., Kupriyanov A.
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| Том 45, № 8-9 (2016) |
Investigation of ion-electron emission in the process of reactive ion-beam etching of dielectric thin film heterostructures |
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Kurochka A., Sergienko A., Kurochka S.
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| Том 46, № 1 (2017) |
Investigation of textured aluminum nitride films prepared by chemical vapor deposition |
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Red’kin A., Ryzhova M., Yakimov E., Roshchupkin D.
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| Том 46, № 5 (2017) |
Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology |
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Orlov O., Voronov D., Izmailov R., Krasnikov G.
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| Том 45, № 3 (2016) |
Investigation of the impact of plasma etching steps on the roughness of the fin FET channel sidewalls in the scheme of hetero-integration |
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Baranov G., Milenin A., Baklanov M.
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| Том 47, № 5 (2018) |
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension |
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Myakonkikh A., Kuvaev K., Tatarintsev A., Orlikovskii N., Rudenko K., Guschin O., Gornev E.
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| Том 45, № 4 (2016) |
Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition |
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Orlov O., Markeev A., Zenkevich A., Chernikova A., Spiridonov M., Izmaylov R., Gornev E.
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| Том 46, № 8 (2017) |
Is It not Time to Go back to Tamman’s Tg? |
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Minaev V., Parfenov N., Timoshenkov S., Vassiliev V., Kalugin V., Mukimov D.
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| Том 48, № 7 (2019) |
Junctionless MOS-Transistor with a Low Subthreshold Current |
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Korolev M., Klyuchnikov A., Efimova D.
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| Том 45, № 2 (2016) |
Kinetics of growth and plasma destruction of polymer films deposited in a glow discharge in methane |
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Barinov S., Efremov A.
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| Том 45, № 4 (2016) |
Kinetics of neutral particles in HCl and HBr plasmas at low pressures and high electron concentrations |
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Efremov A.
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| Том 45, № 5 (2016) |
Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide |
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Pivovarenok S., Dunaev A., Murin D.
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| Том 47, № 3 (2018) |
Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions |
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Chumakov A.
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| Том 48, № 3 (2019) |
Layout Synthesis Design Flow for Special-Purpose Reconfigurable Systems-on-a-Chip |
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Gavrilov S., Zheleznikov D., Zapletina M., Khvatov V., Chochaev R., Enns V.
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| Том 48, № 3 (2019) |
Logical C-Element on STG DICE Trigger for Asynchronous Digital Devices Resistant to Single Nuclear Particles |
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Katunin Y., Stenin V.
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| Нәтижелер 331 - 151/175 |
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