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Issue Title File
Vol 46, No 4 (2017) Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Garmash V.I.
Vol 46, No 2 (2017) Optimization of the synthesis of carbon nanotubes to improve the efficiency of chemical posttreatments of the prepared material
Pavlov A.A., Sysa A.V., Shaman Y.P., Bazarova M.I., Gavrilin I.M., Polokhin A.A.
Vol 47, No 8 (2018) Optimization Problems of Nanosized Semiconductor Heterostructures
Abgaryan K.K.
Vol 46, No 5 (2017) Organizing the memory array of multiport register files to reduce power consumption
Solovyeva L.A., Kirichenko P.G.
Vol 46, No 7 (2017) Parameter Calculation and Investigation of a MIS Varicap with Charge Transfer for L-Range Microwave Devices
Surin Y.V., Spiridonov A.B., Litsoev S.V., Martinova V.P., Mezhov A.V., Karpovskaya A.A.
Vol 47, No 6 (2018) Parameters of Plasma and Kinetics of Active Particles in CF4 (CHF3) + Ar Mixtures of a Variable Initial Composition
Efremov A.M., Murin D.B., Kwon K.
Vol 48, No 6 (2019) Parameters of Plasma and Way of Etching Silicon in a CF4 + CHF3 + O2 Mixture
Efremov A.M., Murin D.B., Kwon K.
Vol 46, No 3 (2017) Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using laser controlled thermal cleavage
Shchavruk N.V., Redkin S.V., Trofimov A.A., Ivanova N.E., Skripnichenko A.S., Kondratenko V.S., Styran V.V.
Vol 48, No 8 (2019) Peculiarities of the Crystal Structure and Texture of Isotropic and Anisotropic Polycrystalline Hexagonal Ferrites BaFe12O19 Synthesized by Radiation-Thermal Sintering
Isaev I.M., Bryazgin A.A., Korobeynikov M.V., Mihaylenko M.A., Kalinyuk M.V., Belokon’ E.A., Korovushkin V.V., Alekseev A.A., Ostafijchuk B.K., Mokljak V.V., Nalogin A.G., Kostishin V.G., Shcherbakov S.V., Salogub D.V.
Vol 46, No 5 (2017) Peculiarities of the energy landscape of a rectangular magnetic nanoisland
Trushin O.S., Barabanova N.I.
Vol 45, No 2 (2016) Photoelectric and optical properties of Schottky-barrier photodiodes based on IrSi–Si
Kerimov E.A.
Vol 45, No 8-9 (2016) Photosensitive heterostructures based on porous nanocrystalline silicon
Latukhina N.V., Rogozhin A.S., Saed S., Chepurnov V.I.
Vol 45, No 5 (2016) Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals
Roshchin V.M., Dshkhunyan V.L., Petukhov I.N., Sen’chenko K.S., Vagin M.S.
Vol 47, No 8 (2018) Polysilicon Market Development and Production Technologies
Mitin V.V., Kokh A.A.
Vol 48, No 4 (2019) Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method
Fadeev A.V., Rudenko K.V.
Vol 46, No 3 (2017) Power switching transistors based on gallium nitride epitaxial heterostructures
Erofeev E.V., Fedin I.V., Yurjev Y.N.
Vol 45, No 4 (2016) Practical aspects of producing MIS structures with good prospects using atomic layer deposition technology
Aliabev A.J., Korotkov A.S.
Vol 48, No 7 (2019) Precision L-Band Analog-Digital Phase Shifter with a 0°–360° Phase Change
Efimov A.G., Kuptsov E.O., Martynova V.P., Spiridonov A.B., Surin Y.V.
Vol 48, No 8 (2019) Prediction of Potential Barrier at Crystallite Boundaries in Poly- and Nanocrystalline Semiconductors
Ilin A.S., Gololobov V.M., Forsh E.A., Forsh P.A., Kashkarov P.K.
Vol 45, No 8-9 (2016) Prospects of the polysilicon market
Nekrasov A.V., Naumov A.V.
Vol 47, No 6 (2018) Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods
Trushin O.S., Simakin S.G., Vasiliev S.V., Smirnov E.A.
Vol 47, No 4 (2018) Quantum Gates with Spin States in Continuous Microwave Field
Zinovieva A.F., Nenashev A.V., Koshkarev A.A., Zarodnyuk T.S., Gornov A.Y., Dvurechenskii A.V.
Vol 48, No 7 (2019) Radio-Wave Method of Control of the Heterogeneity of the Electrophysical Parameters of Dielectrics Using a Scanning Microstrip Line
Baranov A.A., Sergeev V.A.
Vol 45, No 7 (2016) Refined model of low-impedance film resistors with a comb-like structure
Sadkov V.D., Lopatkin A.V.
Vol 48, No 3 (2019) Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions
Brinkevich D.I., Kharchenko A.A., Prosolovich V.S., Odzhaev V.B., Brinkevich S.D., Yankovskii Y.N.
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