Issue |
Title |
File |
Vol 46, No 8 (2017) |
Deep Tellurium Purification for the Production of Electronic and Photonic Materials |
|
Grishechkin M.B., Mozhevitina E.N., Khomyakov A.V., Zykova M.P., Avetisov R.I., Avetissov I.K.
|
Vol 46, No 8 (2017) |
Deformation Anisotropy of Y + 128°-Cut Single Crystalline Bidomain Wafers of Lithium Niobate |
|
Kubasov I.V., Malinkovich M.D., Chichkov M.V., Kiselev D.A., Zhukov R.N., Kislyuk A.M., Temirov A.A., Bykova A.S., Popov A.V., Parkhomenko Y.N.
|
Vol 47, No 3 (2018) |
Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes |
|
Miakonkikh A.V., Orlikovskiy N.A., Rogozhin A.E., Tatarintsev A.A., Rudenko K.V.
|
Vol 47, No 7 (2018) |
Design Automation Technique of Silicon Bandgap Voltage Reference |
|
Ivanov V.G., Losev V.V.
|
Vol 46, No 7 (2017) |
Design Features of Parameterized Analog Cells Based on Matched SOI Matrix Elements |
|
Zhuravlev A.A., Krupkina T.U., Enns A.V., Enns V.I.
|
Vol 45, No 7 (2016) |
Design of a multielement infrared thermal detector |
|
Pevtsov E.P., Sigov A.S., Shnyakin A.A.
|
Vol 48, No 5 (2019) |
Design of a Thin-Film Thermoelectric Generator for Low-Power Applications |
|
Korotkov A.S., Loboda V.V., Dzyubanenko S.V., Bakulin E.M.
|
Vol 45, No 2 (2016) |
Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands |
|
Fedorov Y.V., Gnatyuk D.L., Bugaev A.S., Matveenko O.S., Galiev R.R., Zuev A.V., Pavlov A.Y., Mikhailovich S.V.
|
Vol 45, No 3 (2016) |
Detection of terahertz radiation by resonant tunneling nanoheterostructures |
|
Egorkin V.I., Kapaev V.V.
|
Vol 48, No 7 (2019) |
Developing the Guard Ring Topology of Power Silicon Diodes with a Blocking Voltage of up to 6.7 kV |
|
Sopova O., Kritskaya T.
|
Vol 45, No 7 (2016) |
Development and research of MIS varicaps with charge transfer |
|
Surin Y.V., Spiridonov A.B., Litsoev S.V.
|
Vol 48, No 7 (2019) |
Development of an Area Image Sensor Pixel for an X-Ray Detector |
|
Suponnikov D.A., Putilin A.N., Tatarinova E.A., Zhgunev Z.G., Dabagov A.R.
|
Vol 46, No 1 (2017) |
Development of design flow for multiported register files, which includes a cell library and a compiler for SOI 0.25-μm process |
|
Kirichenko P.G., Tarasov I.V.
|
Vol 45, No 7 (2016) |
Development of magnetic semiconductor microsystems technology |
|
Amelichev V.V., Abanin I.E., Aravin V.V., Kostyuk D.V., Kasatkin S.I., Reznev A.A., Saurov A.N.
|
Vol 46, No 6 (2017) |
Development of the Technology of Magnetron Sputtering Deposition of LiPON Films and Investigation of Their Characteristics |
|
Vasilev S.V., Lebedev M.E., Mazaletskii L.A., Metlitskaya A.V., Mironenko A.A., Naumov V.V., Novozhilova A.V., Rudyi A.S., Fedorov I.S.
|
Vol 46, No 7 (2017) |
Device-Technological Modeling of Integrated Circuit Elements with Improved Resilience to External Influences |
|
Chaplygin Y.A., Krupkina T.Y., Krasukov A.Y., Artamonova E.A.
|
Vol 46, No 4 (2017) |
Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles |
|
Sogoyan A.V., Chumakov A.I.
|
Vol 46, No 1 (2017) |
Direct conversion of β-decay energy into electrical energy |
|
Bulyarskii S.V., Lakalin A.V., Abanin I.E., Amelichev V.V., Risovanyi V.D., Svetukhin V.V., Ivanov B.V., Lisina I.G.
|
Vol 45, No 8-9 (2016) |
Directed crystallization of multicrystalline silicon under weak melt convection and gas exchange |
|
Gonik M.A.
|
Vol 47, No 8 (2018) |
Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron |
|
Rusak T.F., Enisherlova K.L., Lutzau A.V., Saraykin V.V., Korneev V.I.
|
Vol 45, No 7 (2016) |
Double stage low-frequency noise equivalent circuit of green InGaN LEDs for description of noise characteristics |
|
Sergeev V.A., Frolov I.V., Shirokov A.A.
|
Vol 46, No 7 (2017) |
Dynamics of the Accumulation of Excess Holes in n-AlGaAs/GaAs Heterostructure Quantum Wells |
|
Yaremenko N.G., Strakhov V.A., Karachevtseva M.V., Fedorov Y.V.
|
Vol 45, No 1 (2016) |
Effect of a diamond heat spreader on the characteristics of gallium nitride-based transistors |
|
Grishakov K.S., Elesin V.F., Kargin N.I., Ryzhuk R.V., Minnebaev S.V.
|
Vol 46, No 3 (2017) |
Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma |
|
Pivovarenok S.A.
|
Vol 46, No 4 (2017) |
Effect of constructional features of the insulating gap of open TiN–SiO2–W and Si–SiO2–W “sandwich” structures on the process of their electroforming |
|
Mordvintsev V.M., Kudryavtsev S.E.
|
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