| Шығарылым |
Атауы |
Файл |
| Том 46, № 8 (2017) |
Deep Tellurium Purification for the Production of Electronic and Photonic Materials |
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Grishechkin M., Mozhevitina E., Khomyakov A., Zykova M., Avetisov R., Avetissov I.
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| Том 46, № 8 (2017) |
Deformation Anisotropy of Y + 128°-Cut Single Crystalline Bidomain Wafers of Lithium Niobate |
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Kubasov I., Malinkovich M., Chichkov M., Kiselev D., Zhukov R., Kislyuk A., Temirov A., Bykova A., Popov A., Parkhomenko Y.
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| Том 47, № 3 (2018) |
Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes |
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Miakonkikh A., Orlikovskiy N., Rogozhin A., Tatarintsev A., Rudenko K.
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| Том 47, № 7 (2018) |
Design Automation Technique of Silicon Bandgap Voltage Reference |
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Ivanov V., Losev V.
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| Том 46, № 7 (2017) |
Design Features of Parameterized Analog Cells Based on Matched SOI Matrix Elements |
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Zhuravlev A., Krupkina T., Enns A., Enns V.
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| Том 45, № 7 (2016) |
Design of a multielement infrared thermal detector |
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Pevtsov E., Sigov A., Shnyakin A.
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| Том 48, № 5 (2019) |
Design of a Thin-Film Thermoelectric Generator for Low-Power Applications |
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Korotkov A., Loboda V., Dzyubanenko S., Bakulin E.
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| Том 45, № 2 (2016) |
Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands |
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Fedorov Y., Gnatyuk D., Bugaev A., Matveenko O., Galiev R., Zuev A., Pavlov A., Mikhailovich S.
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| Том 45, № 3 (2016) |
Detection of terahertz radiation by resonant tunneling nanoheterostructures |
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Egorkin V., Kapaev V.
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| Том 48, № 7 (2019) |
Developing the Guard Ring Topology of Power Silicon Diodes with a Blocking Voltage of up to 6.7 kV |
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Sopova O., Kritskaya T.
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| Том 45, № 7 (2016) |
Development and research of MIS varicaps with charge transfer |
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Surin Y., Spiridonov A., Litsoev S.
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| Том 48, № 7 (2019) |
Development of an Area Image Sensor Pixel for an X-Ray Detector |
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Suponnikov D., Putilin A., Tatarinova E., Zhgunev Z., Dabagov A.
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| Том 46, № 1 (2017) |
Development of design flow for multiported register files, which includes a cell library and a compiler for SOI 0.25-μm process |
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Kirichenko P., Tarasov I.
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| Том 45, № 7 (2016) |
Development of magnetic semiconductor microsystems technology |
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Amelichev V., Abanin I., Aravin V., Kostyuk D., Kasatkin S., Reznev A., Saurov A.
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| Том 46, № 6 (2017) |
Development of the Technology of Magnetron Sputtering Deposition of LiPON Films and Investigation of Their Characteristics |
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Vasilev S., Lebedev M., Mazaletskii L., Metlitskaya A., Mironenko A., Naumov V., Novozhilova A., Rudyi A., Fedorov I.
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| Том 46, № 7 (2017) |
Device-Technological Modeling of Integrated Circuit Elements with Improved Resilience to External Influences |
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Chaplygin Y., Krupkina T., Krasukov A., Artamonova E.
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| Том 46, № 4 (2017) |
Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles |
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Sogoyan A., Chumakov A.
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| Том 46, № 1 (2017) |
Direct conversion of β-decay energy into electrical energy |
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Bulyarskii S., Lakalin A., Abanin I., Amelichev V., Risovanyi V., Svetukhin V., Ivanov B., Lisina I.
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| Том 45, № 8-9 (2016) |
Directed crystallization of multicrystalline silicon under weak melt convection and gas exchange |
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|
Gonik M.
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| Том 47, № 8 (2018) |
Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron |
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Rusak T., Enisherlova K., Lutzau A., Saraykin V., Korneev V.
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| Том 45, № 7 (2016) |
Double stage low-frequency noise equivalent circuit of green InGaN LEDs for description of noise characteristics |
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Sergeev V., Frolov I., Shirokov A.
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| Том 46, № 7 (2017) |
Dynamics of the Accumulation of Excess Holes in n-AlGaAs/GaAs Heterostructure Quantum Wells |
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Yaremenko N., Strakhov V., Karachevtseva M., Fedorov Y.
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| Том 45, № 1 (2016) |
Effect of a diamond heat spreader on the characteristics of gallium nitride-based transistors |
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Grishakov K., Elesin V., Kargin N., Ryzhuk R., Minnebaev S.
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| Том 46, № 3 (2017) |
Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma |
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Pivovarenok S.
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| Том 46, № 4 (2017) |
Effect of constructional features of the insulating gap of open TiN–SiO2–W and Si–SiO2–W “sandwich” structures on the process of their electroforming |
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Mordvintsev V., Kudryavtsev S.
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| Нәтижелер 331 - 51/75 |
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