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Issue Title File
Vol 46, No 8 (2017) Deep Tellurium Purification for the Production of Electronic and Photonic Materials
Grishechkin M.B., Mozhevitina E.N., Khomyakov A.V., Zykova M.P., Avetisov R.I., Avetissov I.K.
Vol 46, No 8 (2017) Deformation Anisotropy of Y + 128°-Cut Single Crystalline Bidomain Wafers of Lithium Niobate
Kubasov I.V., Malinkovich M.D., Chichkov M.V., Kiselev D.A., Zhukov R.N., Kislyuk A.M., Temirov A.A., Bykova A.S., Popov A.V., Parkhomenko Y.N.
Vol 47, No 3 (2018) Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes
Miakonkikh A.V., Orlikovskiy N.A., Rogozhin A.E., Tatarintsev A.A., Rudenko K.V.
Vol 47, No 7 (2018) Design Automation Technique of Silicon Bandgap Voltage Reference
Ivanov V.G., Losev V.V.
Vol 46, No 7 (2017) Design Features of Parameterized Analog Cells Based on Matched SOI Matrix Elements
Zhuravlev A.A., Krupkina T.U., Enns A.V., Enns V.I.
Vol 45, No 7 (2016) Design of a multielement infrared thermal detector
Pevtsov E.P., Sigov A.S., Shnyakin A.A.
Vol 48, No 5 (2019) Design of a Thin-Film Thermoelectric Generator for Low-Power Applications
Korotkov A.S., Loboda V.V., Dzyubanenko S.V., Bakulin E.M.
Vol 45, No 2 (2016) Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands
Fedorov Y.V., Gnatyuk D.L., Bugaev A.S., Matveenko O.S., Galiev R.R., Zuev A.V., Pavlov A.Y., Mikhailovich S.V.
Vol 45, No 3 (2016) Detection of terahertz radiation by resonant tunneling nanoheterostructures
Egorkin V.I., Kapaev V.V.
Vol 48, No 7 (2019) Developing the Guard Ring Topology of Power Silicon Diodes with a Blocking Voltage of up to 6.7 kV
Sopova O., Kritskaya T.
Vol 45, No 7 (2016) Development and research of MIS varicaps with charge transfer
Surin Y.V., Spiridonov A.B., Litsoev S.V.
Vol 48, No 7 (2019) Development of an Area Image Sensor Pixel for an X-Ray Detector
Suponnikov D.A., Putilin A.N., Tatarinova E.A., Zhgunev Z.G., Dabagov A.R.
Vol 46, No 1 (2017) Development of design flow for multiported register files, which includes a cell library and a compiler for SOI 0.25-μm process
Kirichenko P.G., Tarasov I.V.
Vol 45, No 7 (2016) Development of magnetic semiconductor microsystems technology
Amelichev V.V., Abanin I.E., Aravin V.V., Kostyuk D.V., Kasatkin S.I., Reznev A.A., Saurov A.N.
Vol 46, No 6 (2017) Development of the Technology of Magnetron Sputtering Deposition of LiPON Films and Investigation of Their Characteristics
Vasilev S.V., Lebedev M.E., Mazaletskii L.A., Metlitskaya A.V., Mironenko A.A., Naumov V.V., Novozhilova A.V., Rudyi A.S., Fedorov I.S.
Vol 46, No 7 (2017) Device-Technological Modeling of Integrated Circuit Elements with Improved Resilience to External Influences
Chaplygin Y.A., Krupkina T.Y., Krasukov A.Y., Artamonova E.A.
Vol 46, No 4 (2017) Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles
Sogoyan A.V., Chumakov A.I.
Vol 46, No 1 (2017) Direct conversion of β-decay energy into electrical energy
Bulyarskii S.V., Lakalin A.V., Abanin I.E., Amelichev V.V., Risovanyi V.D., Svetukhin V.V., Ivanov B.V., Lisina I.G.
Vol 45, No 8-9 (2016) Directed crystallization of multicrystalline silicon under weak melt convection and gas exchange
Gonik M.A.
Vol 47, No 8 (2018) Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron
Rusak T.F., Enisherlova K.L., Lutzau A.V., Saraykin V.V., Korneev V.I.
Vol 45, No 7 (2016) Double stage low-frequency noise equivalent circuit of green InGaN LEDs for description of noise characteristics
Sergeev V.A., Frolov I.V., Shirokov A.A.
Vol 46, No 7 (2017) Dynamics of the Accumulation of Excess Holes in n-AlGaAs/GaAs Heterostructure Quantum Wells
Yaremenko N.G., Strakhov V.A., Karachevtseva M.V., Fedorov Y.V.
Vol 45, No 1 (2016) Effect of a diamond heat spreader on the characteristics of gallium nitride-based transistors
Grishakov K.S., Elesin V.F., Kargin N.I., Ryzhuk R.V., Minnebaev S.V.
Vol 46, No 3 (2017) Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma
Pivovarenok S.A.
Vol 46, No 4 (2017) Effect of constructional features of the insulating gap of open TiN–SiO2–W and Si–SiO2–W “sandwich” structures on the process of their electroforming
Mordvintsev V.M., Kudryavtsev S.E.
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