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Lista de artigos

Edição Título Arquivo
Volume 48, Nº 6 (2019) Modeling the Charge Collection from a Track of an Ionizing Particle in Upset Hardened CMOS Trigger Elements
Stenin V., Katunin Y.
Volume 48, Nº 6 (2019) Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working Region
Masal’skii N.
Volume 47, Nº 6 (2018) Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma
Rezvanov A., Matyushkin I., Gushchin O., Gornev E.
Volume 47, Nº 8 (2018) Modeling the Energy Structure of a GaN pin Junction
Manyakhin F., Mokretsova L.
Volume 46, Nº 8 (2017) Modeling the Sensing Activity of Carbon Nanotubes Functionalized with the Carboxyl, Amino, or Nitro Group Toward Alkali Metals
Boroznina N., Zaporotskova I.
Volume 46, Nº 2 (2017) Modeling thermoelectric generators using the ANSYS software platform: Methodology, practical applications, and prospects
Korotkov A., Loboda V., Makarov S., Feldhoff A.
Volume 46, Nº 1 (2017) Modelling of emission processes in carbon nanotubes
Lakalin A., Pavlov A., Shamanaev A.
Volume 46, Nº 6 (2017) Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure
Fedorov Y., Gnatyuk D., Zuev A., Maitama M.
Volume 48, Nº 3 (2019) Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon
Rudenko M., Myakon’kikh A., Lukichev V.
Volume 45, Nº 1 (2016) Multilayer graphene-based flash memory
Novikov Y., Gritsenko V., Krasnikov G., Orlov O.
Volume 48, Nº 3 (2019) Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language
Teplov G., Gornev E.
Volume 45, Nº 2 (2016) Nanoelectromechanical diamond structures in quantum informatics. Part I
Tsukanov A.
Volume 45, Nº 3 (2016) Nanoelectromechanical diamond structures in quantum informatics. Part II
Tsukanov A.
Volume 48, Nº 2 (2019) Nanoscaled Profiling of Silicon Surface via Local Anodic Oxidation
Polyakova V., Kots I., Smirnov V., Ageev O.
Volume 47, Nº 5 (2018) Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates
Batalov R., Bayazitov R., Novikov H., Faizrakhmanov I., Shustov V., Ivlev G.
Volume 45, Nº 7 (2016) Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz
Mal’tsev P., Maitama M., Pavlov A., Shchavruk N.
Volume 46, Nº 5 (2017) Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures
Pavlov A., Pavlov V., Slapovskiy D., Arutyunyan S., Fedorov Y., Mal’tsev P.
Volume 45, Nº 3 (2016) Non-stationary phase transitions in systems metallization of silicon structures
Skvortsov A., Zuev S., Koryachko M.
Volume 46, Nº 8 (2017) Obtaining Material Based on Copper Selenide by the Methods of Powder Metallurgy
Ivanov A., Osvenskii V., Sorokin A., Panchenko V., Bulat L., Akchurin R.
Volume 46, Nº 7 (2017) On New Types of Stoneley Waves and the Possibility of Using Them in Integrated Acoustoelectronics
Morocha A., Rozhkov A.
Volume 48, Nº 5 (2019) On the Construction of Neuromorphic Fault Dictionaries for Analog Integrated Circuits
Mosin S.
Volume 47, Nº 4 (2018) On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF4 + C4F8 + Ar Mixture on the Parameters of Plasma and SiO2/Si Etching Selectivity
Efremov A., Murin D., Kwon K.
Volume 47, Nº 8 (2018) On the Nature of the Effective Surface Charge Transformation on InAs Crystals during Anodic Oxide Layer Growth
Artamonov A., Astakhov V., Warlashov I., Gindin P., Evstafieva N., Mitasov P., Miroshnikova I.
Volume 46, Nº 8 (2017) On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon
Anfimov I., Kobeleva S., Pylnev A., Schemerov I., Egorov D., Yurchuk S.
Volume 47, Nº 6 (2018) Operational Features of MEMS with an Even Number of Electrodes
Dragunov V., Ostertak D.
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