Issue |
Title |
File |
Vol 48, No 6 (2019) |
Modeling the Charge Collection from a Track of an Ionizing Particle in Upset Hardened CMOS Trigger Elements |
|
Stenin V.Y., Katunin Y.V.
|
Vol 48, No 6 (2019) |
Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working Region |
|
Masal’skii N.V.
|
Vol 47, No 6 (2018) |
Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma |
|
Rezvanov A.A., Matyushkin I.V., Gushchin O.P., Gornev E.S.
|
Vol 47, No 8 (2018) |
Modeling the Energy Structure of a GaN p–i–n Junction |
|
Manyakhin F.I., Mokretsova L.O.
|
Vol 46, No 8 (2017) |
Modeling the Sensing Activity of Carbon Nanotubes Functionalized with the Carboxyl, Amino, or Nitro Group Toward Alkali Metals |
|
Boroznina N.P., Zaporotskova I.V.
|
Vol 46, No 2 (2017) |
Modeling thermoelectric generators using the ANSYS software platform: Methodology, practical applications, and prospects |
|
Korotkov A.S., Loboda V.V., Makarov S.B., Feldhoff A.
|
Vol 46, No 1 (2017) |
Modelling of emission processes in carbon nanotubes |
|
Lakalin A.V., Pavlov A.A., Shamanaev A.A.
|
Vol 46, No 6 (2017) |
Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure |
|
Fedorov Y.V., Gnatyuk D.L., Zuev A.V., Maitama M.V.
|
Vol 48, No 3 (2019) |
Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon |
|
Rudenko M.K., Myakon’kikh A.V., Lukichev V.F.
|
Vol 45, No 1 (2016) |
Multilayer graphene-based flash memory |
|
Novikov Y.N., Gritsenko V.A., Krasnikov G.Y., Orlov O.M.
|
Vol 48, No 3 (2019) |
Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language |
|
Teplov G.S., Gornev E.S.
|
Vol 45, No 2 (2016) |
Nanoelectromechanical diamond structures in quantum informatics. Part I |
|
Tsukanov A.V.
|
Vol 45, No 3 (2016) |
Nanoelectromechanical diamond structures in quantum informatics. Part II |
|
Tsukanov A.V.
|
Vol 48, No 2 (2019) |
Nanoscaled Profiling of Silicon Surface via Local Anodic Oxidation |
|
Polyakova V.V., Kots I.N., Smirnov V.A., Ageev O.A.
|
Vol 47, No 5 (2018) |
Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates |
|
Batalov R.I., Bayazitov R.M., Novikov H.A., Faizrakhmanov I.A., Shustov V.A., Ivlev G.D.
|
Vol 45, No 7 (2016) |
Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz |
|
Mal’tsev P.P., Maitama M.V., Pavlov A.Y., Shchavruk N.V.
|
Vol 46, No 5 (2017) |
Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures |
|
Pavlov A.Y., Pavlov V.Y., Slapovskiy D.N., Arutyunyan S.S., Fedorov Y.V., Mal’tsev P.P.
|
Vol 45, No 3 (2016) |
Non-stationary phase transitions in systems metallization of silicon structures |
|
Skvortsov A.A., Zuev S.M., Koryachko M.V.
|
Vol 46, No 8 (2017) |
Obtaining Material Based on Copper Selenide by the Methods of Powder Metallurgy |
|
Ivanov A.A., Osvenskii V.B., Sorokin A.I., Panchenko V.P., Bulat L.P., Akchurin R.K.
|
Vol 46, No 7 (2017) |
On New Types of Stoneley Waves and the Possibility of Using Them in Integrated Acoustoelectronics |
|
Morocha A.K., Rozhkov A.S.
|
Vol 48, No 5 (2019) |
On the Construction of Neuromorphic Fault Dictionaries for Analog Integrated Circuits |
|
Mosin S.G.
|
Vol 47, No 4 (2018) |
On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF4 + C4F8 + Ar Mixture on the Parameters of Plasma and SiO2/Si Etching Selectivity |
|
Efremov A.M., Murin D.B., Kwon K.
|
Vol 47, No 8 (2018) |
On the Nature of the Effective Surface Charge Transformation on InAs Crystals during Anodic Oxide Layer Growth |
|
Artamonov A.V., Astakhov V.P., Warlashov I.B., Gindin P.D., Evstafieva N.I., Mitasov P.V., Miroshnikova I.N.
|
Vol 46, No 8 (2017) |
On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon |
|
Anfimov I.M., Kobeleva S.P., Pylnev A.V., Schemerov I.V., Egorov D.S., Yurchuk S.Y.
|
Vol 47, No 6 (2018) |
Operational Features of MEMS with an Even Number of Electrodes |
|
Dragunov V.P., Ostertak D.I.
|
201 - 225 of 331 Items |
<< < 4 5 6 7 8 9 10 11 12 13 > >> |