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Lista de artigos

Edição Título Arquivo
Volume 47, Nº 8 (2018) Low Dose Rate Effects in Silicon-Based Devices and Integrated Circuits: A Review
Tapero K.
Volume 46, Nº 5 (2017) Low-noise amplifier for the range of 57–64 GHz with grounding holes through photolake layer
Krapukhin D., Mal’tsev P.
Volume 47, Nº 3 (2018) Magnetic Force Microscopy of Iron and Nickel Nanowires Fabricated by the Matrix Synthesis Technique
Bizyaev D., Bukharaev A., Khaibullin R., Lyadov N., Zagorskii D., Bedin S., Doludenko I.
Volume 46, Nº 2 (2017) Magnetization of permalloy films
Tikhonov R., Cheremisinov A.
Volume 48, Nº 1 (2019) Magnetooptical Response of Metallized Nanostructural Arrays with a Complex Relief on the Surface of Silicon Wafers
Paporkov V., Prokaznikov A.
Volume 48, Nº 1 (2019) Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching
Derevyashkin S., Soboleva E., Shelkovnikov V., Malyshev A., Korolkov V.
Volume 45, Nº 3 (2016) Mathematical model of thin-film electrode polarization
Kuznetsova I., Kulikov A., Kulova T., Metlitskaya A., Mironenko A., Rudyi A., Skundin A.
Volume 45, Nº 7 (2016) Mathematical simulation of the influence of the doping concentration on the drain current of an SOI field-effect hall sensor
Kozlov A., Korolev M., Petrunina S.
Volume 48, Nº 7 (2019) Measurements of the Airflow Velocity Using Ultrasonic Transducers
Panov A., Serov A.
Volume 46, Nº 1 (2017) Measuring the sizes of microcircuit elements of widths less than 100 nm by the method of SEM probe defocusing
Novikov Y.
Volume 47, Nº 7 (2018) Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure Layers
Vigdorovich E.
Volume 48, Nº 4 (2019) Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs
Chumakov A., Bobrovsky D., Pechenkin A., Savchenkov D., Sorokoumov G., Shvetsov-Shilovskiy I.
Volume 48, Nº 4 (2019) Memristor Based Pulse Train Generator
Rakitin V., Rusakov S.
Volume 48, Nº 6 (2019) Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects
Chernyak M., Ranneva E., Ulanova A., Nikiforov A., Verizhnikov A., Tsyrlov A., Fedosov V., Shchepanov A., Kalashnikov V., Titovets D.
Volume 46, Nº 4 (2017) Method of radiational identification of a plant and characterization of integrated circuit technology
Sogoyan A., Davydov G., Artamonov A., Kolosova A., Telets V., Nikiforrov A., Ozhegin Y., Kameneva A., Moskovskaya Y.
Volume 48, Nº 3 (2019) Methods and Algorithms for the Logical-Topological Design of Microelectronic Circuits at the Valve and Inter-Valve Levels for Promising Technologies with a Vertical Transistor Gate
Ivanova G., Ryzhova D., Gavrilov S., Vasilyev N., Stempkovskii A.
Volume 47, Nº 8 (2018) Methods for Studying Materials and Structures in Electronics as Applied to the Development of Medicinal Endoprostheses of Titanium with Enhanced Fibroinegration Efficiency
Malinkovich M., Cherkesov I., Temirov A., Molchanov S., Shaikhaliev A., Polisan A., Ivanov S., Kiselev D., Parkhomenko Y.
Volume 46, Nº 3 (2017) Methods of functional-logic simulation of radiation-induced failures of electronic systems based on the fuzzy state machine model
Barbashov V., Kalashnikov O.
Volume 48, Nº 7 (2019) Methods of Improving the Accuracy of Simulating Delays and Peak Currents of Combinational CMOS-Circuits at the Logical Design Level
Ivanova G., Ryzhova D.
Volume 46, Nº 7 (2017) Methods to Accelerate Transient Processes in Frequency Synthesizers
Zaytsev A., Petrov V.
Volume 48, Nº 4 (2019) Microconsuming 8–12 GHz GaN Power Amplifiers
Gamkrelidze S., Gnatyuk D., Zuev A., Maitama M., Mal’tsev P., Mikhalev A., Fedorov Y.
Volume 45, Nº 6 (2016) Mo/Al/Mo/Au-based ohmic contacts to AlGaN/GaN heterostructures
Kondakov M., Chernykh S., Chernykh A., Gladysheva N., Dorofeev A., Didenko S., Shcherbachev K., Tabachkova N., Kaprov D.
Volume 45, Nº 4 (2016) Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors
Amirkhanov A., Volkov S., Glushko A., Zinchenko L., Makarchuk V., Shakhnov V.
Volume 45, Nº 3 (2016) Modeling of the high aspect groove etching in Si in a Cl2/Ar mixture plasma
Shumilov A., Amirov I., Lukichev V.
Volume 46, Nº 5 (2017) Modeling SiO2 leakage currents caused by electrical overloads
Polunin V.
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