| Шығарылым |
Атауы |
Файл |
| Том 45, № 7 (2016) |
320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes |
|
|
Belin A., Zolotarev V., Nikiforov A., Popov A.
|
| Том 45, № 7 (2016) |
A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode |
|
|
Grigoriev F., Aleksandrova A., Gafurov V.
|
| Том 45, № 4 (2016) |
A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles |
|
|
Boruzdina A., Ulanova A., Chumakov A., Yanenko A.
|
| Том 47, № 7 (2018) |
A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders |
|
|
Starykh A., Kovalev A.
|
| Том 48, № 5 (2019) |
A New Voltage Level Shifter For Low-Power Applications |
|
|
Shubin V.
|
| Том 45, № 3 (2016) |
A nonlinear microwave model of a low-barrier diode based on semiconductor junctions |
|
|
Arykov V., Yunusov I., Kagadei V., Fazleeva A.
|
| Том 48, № 6 (2019) |
A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer |
|
|
Filali W., Garoudja E., Oussalah S., Mekheldi M., Sengouga N., Henini M.
|
| Том 45, № 8-9 (2016) |
A study of magnetic and electronic hyperfine interactions in epitaxial film of yttrium-iron garnet by the method of conversion electron Mössbauer spectroscopy |
|
|
Moklyak V.
|
| Том 48, № 7 (2019) |
A study of the Composition of Tellurium Vapor by the Static Method |
|
|
Vigdorovich E.
|
| Том 47, № 1 (2018) |
A System for Logical Design of Custom CMOS VLSI Functional Blocks with Reduced Power Consumption |
|
|
Bibilo P., Avdeev N., Kardash S., Kirienko N., Lankevich Y., Loginova I., Romanov V., Cheremisinov D., Cheremisinova L.
|
| Том 46, № 4 (2017) |
A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films |
|
|
Ishchenko D., Kuchumov B.
|
| Том 47, № 4 (2018) |
A Thin-Film Platform for Chemical Gas Sensors |
|
|
Roslyakov I., Napolskii K., Stolyarov V., Karpov E., Ivashev A., Surtaev V.
|
| Том 45, № 2 (2016) |
A universal digital platform for the construction of self-organizing wireless sensor networks for industrial safety and ecological monitoring systems |
|
|
Sukhanov A., Prokof’ev I., Ivanov A.
|
| Том 48, № 7 (2019) |
Absorbing Elements Based on a Uniform Resistive Film for the Implementation of a Wide Range of Radio Signal Power Attenuations |
|
|
Sadkov V., Fomina K., Pil’kevich A.
|
| Том 46, № 1 (2017) |
Alloying carbon nanotubes |
|
|
Saurov A., Bulyarskii S.
|
| Том 47, № 7 (2018) |
An Integrated High-Capacitance Varicap Based on Porous Silicon |
|
|
Timoshenkov S., Boyko A., Gaev D., Kalmykov R.
|
| Том 46, № 7 (2017) |
Analysis and Simulation of Vertical Complementary Silicon Bipolar Transistors |
|
|
Hrapov M., Gridchin V., Kalinin S.
|
| Том 45, № 3 (2016) |
Analysis of the technological characteristics in fabricating SOI MEMS transducers |
|
|
Parfenov N.
|
| Том 47, № 5 (2018) |
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation |
|
|
Vyurkov V., Khabutdinov R., Nemtsov A., Semenikhin I., Rudenko M., Rudenko K., Lukichev V.
|
| Том 47, № 7 (2018) |
Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors |
|
|
Hrapov M., Gluhov A., Gridchin V., Kalinin S.
|
| Том 46, № 8 (2017) |
Application of Radioactive Isotopes for Beta-Voltaic Generators |
|
|
Bykov A., Polisan A., Chichkov M., Temirov A., Zhukov R., Ksenich S., Kiselev D., Kislyuk A., Kubasov I., Malinkovich M., Parkhomenko Y.
|
| Том 46, № 7 (2017) |
Application of Two-Wavelength X-Ray Optical Scheme for Combined Measurements of X-Ray Specular Reflection and Diffuse Scattering to Study Multilayered Thin Film Structures |
|
|
Smirnov D., Gerasimenko N., Ovchinnikov V.
|
| Том 47, № 5 (2018) |
Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics |
|
|
Kudrya V., Maishev Y.
|
| Том 47, № 1 (2018) |
Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm |
|
|
Rudenko K., Myakon’kikh A., Rogozhin A., Gushchin O., Gvozdev V.
|
| Том 47, № 2 (2018) |
Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia |
|
|
Abdulagatov A., Ramazanov S., Dallaev R., Murliev E., Palchaev D., Rabadanov M., Abdulagatov I.
|
| Нәтижелер 331 - 1/25 |
1 2 3 4 5 6 7 8 9 10 > >> |
