Pesquisa

Edição
Título
Autores
Volume 50, Nº 5 (2016)
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
Aleshkin V., Dubinov A., Kudryavtsev K., Yunin P., Drozdov M., Vikhrova O., Nekorkin S., Zvonkov B.
PDF
(Eng)
Volume 52, Nº 9 (2018)
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
Seredin P., Lenshin A., Fedyukin A., Goloshchapov D., Lukin A., Arsentyev I., Zhabotinsky A.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode
Vasil’evskii I., Pushkarev S., Grekhov M., Vinichenko A., Lavrukhin D., Kolentsova O.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Galiev G., Klimov E., Grekhov M., Pushkarev S., Lavrukhin D., Maltsev P.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy
Dunaev A., Murin D., Pivovarenok S.
PDF
(Eng)
Volume 52, Nº 10 (2018)
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
Maximov M., Nadtochiy A., Shernyakov Y., Payusov A., Vasil’ev A., Ustinov V., Serin A., Gordeev N., Zhukov A.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds
Gromov D., Maltsev P., Polevich S.
PDF
(Eng)
Volume 53, Nº 16 (2019)
Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
Spirina A., Neizvestny I., Shwartz N.
PDF
(Eng)
Volume 53, Nº 10 (2019)
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction
Vostokov N., Daniltsev V., Kraev S., Krukov V., Skorokhodov E., Strelchenko S., Shashkin V.
PDF
(Eng)
Volume 50, Nº 2 (2016)
GaAs structures with a gate dielectric based on aluminum-oxide layers
Kalentyeva I., Vikhrova O., Zdoroveyshchev A., Danilov Y., Kudrin A.
PDF
(Eng)
Volume 53, Nº 16 (2019)
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
Prasolov N., Ermakov I., Gutkin A., Solov’ev V., Dorogin L., Konnikov S., Brunkov P.
PDF
(Eng)
Volume 53, Nº 9 (2019)
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A., Pavlov D., Shengurov V., Denisov S., Chalkov V., Baidus N., Rykov A., Kryukov R.
PDF
(Eng)
Volume 52, Nº 9 (2018)
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures
Orlov M., Volkova N., Ivina N., Orlov L.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
Mintairov S., Emelyanov V., Rybalchenko D., Salii R., Timoshina N., Shvarts M., Kalyuzhnyy N.
PDF
(Eng)
Volume 53, Nº 16 (2019)
Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires
Berdnikov Y., Sibirev N., Koryakin A.
PDF
(Eng)
Volume 53, Nº 8 (2019)
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Kruglov A., Reunov D.
PDF
(Eng)
Volume 50, Nº 5 (2016)
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
Kozlovskiy V., Krivobok V., Kuznetsov P., Nikolaev S., Onistchenko E., Pruchkina A., Temiryazev A.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime
Bagraev N., Chaikina E., Danilovskii E., Gets D., Klyachkin L., L’vova T., Malyarenko A.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
Khabibullin R., Yachmenev A., Lavrukhin D., Ponomarev D., Bugayev A., Maltsev P.
PDF
(Eng)
Volume 53, Nº 14 (2019)
J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam
Mikoushkin V., Kalinovskii V., Kontrosh E., Makarevskaya E.
PDF
(Eng)
Volume 53, Nº 8 (2019)
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters
Khvostikov V., Kalyuzhnyy N., Mintairov S., Potapovich N., Sorokina S., Shvarts M.
PDF
(Eng)
Volume 50, Nº 5 (2016)
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Sokolova Z., Bakhvalov K., Lyutetskiy A., Pikhtin N., Tarasov I., Asryan L.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons
Kumekov S., Mustafin A., Mussatay S.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface
Bakulin A., Kulkova S.
PDF
(Eng)
Volume 53, Nº 14 (2019)
Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface
Mikoushkin V., Solonitsyna A., Makarevskaya E., Novikov D.
PDF
(Eng)
1 - 25 de 38 resultados 1 2 > >> 
Dicas:
  • Palavras-chave são sensíveis a maiúsculas
  • Preposições e conjunções ingleses são ignoradas
  • Busca é feita por todos os palavras-chave (agente AND experimentador) por omissão
  • Use OR para pesquisar um termo exato, ex.: educação OR formação
  • Use parênteses para criar frases complexas, ex.: arquivo de ((revistas OR conferências) NOT teses)
  • Para pesquisar uma frase precisa use aspas duplas, ex.: "investigações científicas"
  • Exclua uma palavra utilizando o sinal - (hífen) ou operador NOT; ex.: concurso-de beleza ou concurso NOT de beleza
  • Use * como caractere-coringa, ex.: científic* recuperará as palavras "científico", "científicos", etc.

Este site utiliza cookies

Ao continuar usando nosso site, você concorda com o procedimento de cookies que mantêm o site funcionando normalmente.

Informação sobre cookies