Шығарылым |
Атауы |
Файл |
Том 53, № 12 (2019) |
Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method |
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Shchukin V., Konstantinov V., Sharafutdinov R.
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Том 53, № 1 (2019) |
Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method |
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Shchukin V., Sharafutdinov R., Konstantinov V.
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Том 51, № 9 (2017) |
Derivation of an analytical expression for a physical process from an experimental curve with kinks |
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Davydov V., Kharitonov S., Lugina N., Melnik K.
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Том 53, № 15 (2019) |
Determination of the Bulk Conductivity of III–V Semiconductors in a Strong Constant Electric Field and under Harmonic Effects |
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Malyshev I., Fil K., Goncharova O.
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Том 53, № 11 (2019) |
Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy |
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Lipkova E., Efimova A., Gonchar K., Presnov D., Eliseev A., Lapshin A., Timoshenko V.
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Том 53, № 1 (2019) |
Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements |
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Goldman E., Kuharskaya N., Levashov S., Chucheva G.
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Том 52, № 13 (2018) |
Determination of the Region of Thermal Stability of the Size and Phase Composition of Silver-Sulfide Semiconductor Nanoparticles |
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Sadovnikov S., Vovkotrub E.
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Том 51, № 8 (2017) |
Determination of the thermoelectric efficiency of thermoelectric materials from measurements of linear series of branches for n- and p-types of conductivity |
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Lebedev Y., Ivanov A., Il’in A., Chuyko A.
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Том 52, № 1 (2018) |
Determination of Thermodynamic Parameters in the Cu1.95Ni0.05S Phase-Transition Regions |
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Aliev F., Hasanov H., Rzaeva A., Jafarov M., Damirov G.
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Том 52, № 15 (2018) |
Determining the Concentration of Free Electrons in n-InSb from Far-Infrared Reflectance Spectra with Allowance for Plasmon–Phonon Coupling |
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Belova I., Belov A., Kanevsky V., Lysenko A.
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Том 51, № 13 (2017) |
Determining the Free Carrier Density in CdxHg1–xTe Solid Solutions from Far-Infrared Reflection Spectra |
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Belov A., Denisov I., Kanevskii V., Pashkova N., Lysenko A.
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Том 52, № 10 (2018) |
Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures |
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Grebenshchikova E., Salikhov K., Sidorov V., Shutaev V., Yakovlev Y.
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Том 51, № 8 (2017) |
Development of a mathematical model for optimizing the design of an automotive thermoelectric generator taking into account the influence of its hydraulic resistance on the engine power |
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Poshekhonov R., Arutyunyan G., Pankratov S., Osipkov A., Onishchenko D., Leontyev A.
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Том 52, № 11 (2018) |
Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation |
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Khananova A., Obolensky S.
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Том 53, № 7 (2019) |
Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions |
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Lebedev M., Lvova T., Shakhmin A., Rakhimova O., Dementev P., Sedova I.
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Том 53, № 13 (2019) |
Diameter Dependent Electronic, Optical and Transport Properties of CdSe Nanowire: Ab-Initio Study |
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Khan M., Srivastava A.
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Том 53, № 16 (2019) |
Dielectric Measurements of Polymer Composite Based on CdS Quantum Dots in Low Density Polyethylene at Microwave Frequencies |
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Ushakov N., Kosobudsky I.
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Том 52, № 2 (2018) |
Dielectric Properties and Conductivity of Ag-Doped TlGaS2 Single Crystals |
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Mustafaeva S., Asadov S., Kerimova E.
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Том 50, № 10 (2016) |
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures |
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Bagraev N., Chernev A., Klyachkin L., Malyarenko A., Emel’yanov A., Dubina M.
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Том 50, № 9 (2016) |
Dielectric properties of layered FeGaInS4 single crystals in an alternating electric field |
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Mammadov F., Niftiyev N.
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Том 52, № 7 (2018) |
Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K |
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Kozyukhin S., Bedin S., Rudakovskaya P., Ivanova O., Ivanov V.
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Том 52, № 5 (2018) |
Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures |
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Fomin M., Chernev A., Bagraev N., Klyachkin L., Emelyanov A., Dubina M.
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Том 52, № 8 (2018) |
Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System |
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Castro R., Anisimova N., Kononov A.
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Том 53, № 7 (2019) |
Differences in the Impurity Ionization in Quasi-Classically Strong Constant and Alternating Electric Fields in a Two-Dimensional Superlattice Based on Graphene |
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Badikova P., Glazov S., Syrodoev G.
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Том 53, № 16 (2019) |
Differential Absorption Features of CdSe QDs in the Case of Resonant and Nonresonant Excitons Excitation |
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Smirnov A., Golinskaya A., Zharkova E., Bubenov S., Dorofeev S., Dneprovskii V.
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Нәтижелер 1443 - 176/200 |
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