Мақалалар тізімі

Шығарылым Атауы Файл
Том 53, № 12 (2019) Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method
Shchukin V., Konstantinov V., Sharafutdinov R.
Том 53, № 1 (2019) Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method
Shchukin V., Sharafutdinov R., Konstantinov V.
Том 51, № 9 (2017) Derivation of an analytical expression for a physical process from an experimental curve with kinks
Davydov V., Kharitonov S., Lugina N., Melnik K.
Том 53, № 15 (2019) Determination of the Bulk Conductivity of III–V Semiconductors in a Strong Constant Electric Field and under Harmonic Effects
Malyshev I., Fil K., Goncharova O.
Том 53, № 11 (2019) Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy
Lipkova E., Efimova A., Gonchar K., Presnov D., Eliseev A., Lapshin A., Timoshenko V.
Том 53, № 1 (2019) Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements
Goldman E., Kuharskaya N., Levashov S., Chucheva G.
Том 52, № 13 (2018) Determination of the Region of Thermal Stability of the Size and Phase Composition of Silver-Sulfide Semiconductor Nanoparticles
Sadovnikov S., Vovkotrub E.
Том 51, № 8 (2017) Determination of the thermoelectric efficiency of thermoelectric materials from measurements of linear series of branches for n- and p-types of conductivity
Lebedev Y., Ivanov A., Il’in A., Chuyko A.
Том 52, № 1 (2018) Determination of Thermodynamic Parameters in the Cu1.95Ni0.05S Phase-Transition Regions
Aliev F., Hasanov H., Rzaeva A., Jafarov M., Damirov G.
Том 52, № 15 (2018) Determining the Concentration of Free Electrons in n-InSb from Far-Infrared Reflectance Spectra with Allowance for Plasmon–Phonon Coupling
Belova I., Belov A., Kanevsky V., Lysenko A.
Том 51, № 13 (2017) Determining the Free Carrier Density in CdxHg1–xTe Solid Solutions from Far-Infrared Reflection Spectra
Belov A., Denisov I., Kanevskii V., Pashkova N., Lysenko A.
Том 52, № 10 (2018) Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures
Grebenshchikova E., Salikhov K., Sidorov V., Shutaev V., Yakovlev Y.
Том 51, № 8 (2017) Development of a mathematical model for optimizing the design of an automotive thermoelectric generator taking into account the influence of its hydraulic resistance on the engine power
Poshekhonov R., Arutyunyan G., Pankratov S., Osipkov A., Onishchenko D., Leontyev A.
Том 52, № 11 (2018) Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation
Khananova A., Obolensky S.
Том 53, № 7 (2019) Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions
Lebedev M., Lvova T., Shakhmin A., Rakhimova O., Dementev P., Sedova I.
Том 53, № 13 (2019) Diameter Dependent Electronic, Optical and Transport Properties of CdSe Nanowire: Ab-Initio Study
Khan M., Srivastava A.
Том 53, № 16 (2019) Dielectric Measurements of Polymer Composite Based on CdS Quantum Dots in Low Density Polyethylene at Microwave Frequencies
Ushakov N., Kosobudsky I.
Том 52, № 2 (2018) Dielectric Properties and Conductivity of Ag-Doped TlGaS2 Single Crystals
Mustafaeva S., Asadov S., Kerimova E.
Том 50, № 10 (2016) Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures
Bagraev N., Chernev A., Klyachkin L., Malyarenko A., Emel’yanov A., Dubina M.
Том 50, № 9 (2016) Dielectric properties of layered FeGaInS4 single crystals in an alternating electric field
Mammadov F., Niftiyev N.
Том 52, № 7 (2018) Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K
Kozyukhin S., Bedin S., Rudakovskaya P., Ivanova O., Ivanov V.
Том 52, № 5 (2018) Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures
Fomin M., Chernev A., Bagraev N., Klyachkin L., Emelyanov A., Dubina M.
Том 52, № 8 (2018) Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System
Castro R., Anisimova N., Kononov A.
Том 53, № 7 (2019) Differences in the Impurity Ionization in Quasi-Classically Strong Constant and Alternating Electric Fields in a Two-Dimensional Superlattice Based on Graphene
Badikova P., Glazov S., Syrodoev G.
Том 53, № 16 (2019) Differential Absorption Features of CdSe QDs in the Case of Resonant and Nonresonant Excitons Excitation
Smirnov A., Golinskaya A., Zharkova E., Bubenov S., Dorofeev S., Dneprovskii V.
Нәтижелер 1443 - 176/200 << < 3 4 5 6 7 8 9 10 11 12 > >> 

Осы сайт cookie-файлдарды пайдаланады

Біздің сайтты пайдалануды жалғастыра отырып, сіз сайттың дұрыс жұмыс істеуін қамтамасыз ететін cookie файлдарын өңдеуге келісім бересіз.< / br>< / br>cookie файлдары туралы< / a>