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Vol 50, No 2 (2016)

Photoluminescence properties of thallium-containing GeSe₂ and GeSe₃ vitreous semiconductors

Babaev A.A.

(Eng)

Vol 53, No 12 (2019)

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

Nadtochiy A.M., Shchukin V.A., Cherkashin N., Denneulin T., Zhukov A.E., Maximov M.V., Gordeev N.Y., Payusov A.S., Kulagina M.M., Shernyakov Y.M., Ledentsov N.N.

(Eng)

Vol 52, No 11 (2018)

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

Alexeev P.A., Cirlin G.E., Reznik R.R., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Lebedev S.P., Lebedev A.A., Kirilenko D.A.

(Eng)

Vol 53, No 10 (2019)

On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity

Kocharovsky V.V., Kukushkin V.A., Tarasov S.V., Kocharovskaya E.R., Kocharovsky V.V.

(Eng)

Vol 52, No 10 (2018)

Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures

Grebenshchikova E.A., Salikhov K.M., Sidorov V.G., Shutaev V.A., Yakovlev Y.P.

(Eng)

Vol 52, No 16 (2018)

Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge Trapping

Petrosyan S.G., Yesayan A.E., Nersesyan S.R., Khachatryan V.A.

(Eng)

Vol 52, No 10 (2018)

Analysis of the Features of Hot-Carrier Degradation in FinFETs

Makarov A.A., Tyaginov S.E., Kaczer B., Jech M., Chasin A., Grill A., Hellings G., Vexler M.I., Linten D., Grasser T.

(Eng)

Vol 52, No 16 (2018)

Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction

Yajie Li , Wang P., Meng F., Yu H., Zhou X., Wang H., Pan J.

(Eng)

Vol 50, No 13 (2016)

Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals

Usanov D.A., Nikitov S.A., Skripal A.V., Ponomarev D.V., Latysheva E.V.

(Eng)

Vol 52, No 16 (2018)

Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications

Ajayan J., Ravichandran T., Mohankumar P., Prajoon P., Pravin J.C., Nirmal D.

(Eng)

Vol 50, No 5 (2016)

Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

Sokolova Z.N., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S., Asryan L.V.

(Eng)

Vol 52, No 15 (2018)

Measuring the Effective Masses of the Electrical Conductivity and Density of States by Contactless Microwave Means

Usanov D.A., Postelga A.E., Gurov K.A.

(Eng)

Vol 50, No 5 (2016)

Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM

Stefanovich G.B., Pergament A.L., Boriskov P.P., Kuroptev V.A., Stefanovich T.G.

(Eng)

Vol 52, No 12 (2018)

Behavioral Features of MIS Memristors with a Si₃N₄ Nanolayer Fabricated on a Conductive Si Substrate

Tikhov S.V., Gorshkov O.N., Antonov I.N., Tetelbaum D.I., Mikhaylov A.N., Belov A.I., Morozov A.I., Karakolis P., Dimitrakis P.

(Eng)

Vol 50, No 4 (2016)

Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons

Kumekov S.E., Mustafin A.T., Mussatay S.S.

(Eng)

Vol 52, No 11 (2018)

Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation

Khananova A.V., Obolensky S.V.

(Eng)

Vol 50, No 3 (2016)

Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation

Tarasova E.A., Khananova A.V., Obolensky S.V., Zemlyakov V.E., Sveshnikov Y.N., Egorkin V.I., Ivanov V.A., Medvedev G.V., Smotrin D.S.

(Eng)

1 - 17 of 17 Items

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