| Выпуск |
Название |
Файл |
| Том 51, № 3 (2017) |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
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Galiev G., Grekhov M., Kitaeva G., Klimov E., Klochkov A., Kolentsova O., Kornienko V., Kuznetsov K., Maltsev P., Pushkarev S.
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| Том 53, № 5 (2019) |
The Band-Structure Parameters of Bi1 –xSbx (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients |
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Suslov A., Grabov V., Komarov V., Demidov E., Senkevich S., Suslov M.
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| Том 50, № 10 (2016) |
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface |
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Benemanskaya G., Dementev P., Kukushkin S., Lapushkin M., Osipov A., Senkovskiy B.
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| Том 53, № 16 (2019) |
The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions |
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Kazanov D., Evropeytsev E., Shubina T.
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| Том 51, № 7 (2017) |
The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals |
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Orekhov A., Klechkovskaya V., Rakova E., Solomkin F., Novikov S., Bochkov L., Isachenko G.
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| Том 53, № 1 (2019) |
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films |
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Elistratova M., Zakharova I., Li G., Dubrovin R., Sreseli O.
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| Том 52, № 11 (2018) |
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures |
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Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Antonov I.
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| Том 50, № 13 (2016) |
The effect of the electron–phonon interaction on reverse currents of GaAs-based p–n junctions |
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Zhukov A.
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| Том 53, № 12 (2019) |
The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films |
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Asalzadeh S., Yasserian K.
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| Том 51, № 12 (2017) |
The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode |
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Ganiyev S., Azim Khairi M., Ahmad Fauzi D., Abdullah Y., Hasbullah N.
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| Том 50, № 12 (2016) |
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells |
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Aleshkin V., Gavrilenko L., Gaponova D., Krasil’nik Z., Kryzhkov D.
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| Том 52, № 5 (2018) |
The Features of GaAs Nanowire SEM Images |
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Soshnikov I., Kotlyar K., Bert N., Kirilenko D., Bouravleuv A., Cirlin G.
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| Том 53, № 4 (2019) |
The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy |
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Emelyanov E., Vasev A., Semyagin B., Yesin M., Loshkarev I., Vasilenko A., Putyato M., Petrushkov M., Preobrazhenskii V.
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| Том 53, № 5 (2019) |
The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K |
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Komarov V., Grabov V., Suslov A., Kablukova N., Suslov M.
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| Том 52, № 5 (2018) |
The Impact of the Substrate Material on the Optical Properties of 2D WSe2 Monolayers |
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Schneider L., Lippert S., Kuhnert J., Renaud D., Kang K., Ajayi O., Halbich M., Abdulmunem O., Lin X., Hassoon K., Edalati-Boostan S., Kim Y., Heimbrodt W., Yang E., Hone J., Rahimi-Iman A.
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| Том 53, № 16 (2019) |
The Indirect Excitons Contribution to the Polarizability of a Dielectric Nanoparticle |
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Pokutnyi S., Dzyuba V., Amosov A.
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| Том 53, № 16 (2019) |
The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots |
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Parkhomenko Y., Dement’ev P., Moiseev K.
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| Том 50, № 6 (2016) |
The modification of BaCe0.5Zr0.3Y0.2O3–δ with copper oxide: Effect on the structural and transport properties |
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Lyagaeva Y., Vdovin G., Nikolaenko I., Medvedev D., Demin A.
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| Том 52, № 14 (2018) |
The Oscillations in ESR Spectra of Mn0.11Hg0.89Te in X- and Q-Bands |
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Shestakov A., Fazlizhanov I., Yatsyk I., Ibragimova M., Shustov V., Lyadov N., Eremina R.
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| Том 53, № 16 (2019) |
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope |
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Prasolov N., Ermakov I., Gutkin A., Solov’ev V., Dorogin L., Konnikov S., Brunkov P.
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| Том 53, № 13 (2019) |
The Surface Preparation of Thermoelectric Materials for Deposition of Thin-Film Contact Systems |
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Shtern M., Karavaev I., Shtern Y., Kozlov A., Rogachev M.
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| Том 51, № 2 (2017) |
The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination |
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Arapov Y., Gudina S., Klepikova A., Neverov V., Harus G., Shelushinina N., Yakunin M.
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| Том 53, № 5 (2019) |
The Thermoelectric Power of Bi1 –xSbx Films (0 ≤ x ≤ 0.15) on Mica and Polyimide Substrates in the Temperature Range of 77–300 K |
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Suslov M., Grabov V., Komarov V., Demidov E., Senkevich S., Suslov A.
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| Том 53, № 13 (2019) |
The Thermopower and Electron Mobility in Monophase Monocrystalline SmS in a Wide Temperature Range |
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Popov V., Stepanov N.
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| Том 50, № 12 (2016) |
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors |
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Tarasova E., Obolenskaya E., Hananova A., Obolensky S., Zemliakov V., Egorkin V., Nezhenzev A., Saharov A., Zazul’nokov A., Lundin V., Zavarin E., Medvedev G.
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