| Выпуск |
Название |
Файл |
| Том 51, № 11 (2017) |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
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Reznik R., Kotlyar K., Shtrom I., Soshnikov I., Kukushkin S., Osipov A., Cirlin G.
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| Том 52, № 13 (2018) |
McCurdy’s Effects in the Thermal Conductivity of Elastically Anisotropic Crystals in the Mode of Knudsen Phonon-Gas Flow |
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Kuleyev I., Kuleyev I., Bakharev S.
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| Том 52, № 13 (2018) |
Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method |
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Usanov D., Postelga A., Kalyamin A., Sharov I.
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| Том 51, № 10 (2017) |
Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots |
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Bayramov F., Poloskin E., Chernev A., Toropov V., Dubina M., Bairamov B.
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| Том 51, № 7 (2017) |
Measurement of the thickness of block-structured bismuth films by atomic-force microscopy combined with selective chemical etching |
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Demidov E., Komarov V., Krushelnitckii A., Suslov A.
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| Том 50, № 13 (2016) |
Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals |
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Usanov D., Nikitov S., Skripal A., Ponomarev D., Latysheva E.
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| Том 52, № 15 (2018) |
Measuring the Effective Masses of the Electrical Conductivity and Density of States by Contactless Microwave Means |
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Usanov D., Postelga A., Gurov K.
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| Том 52, № 3 (2018) |
Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities |
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Manyakhin F.
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| Том 53, № 3 (2019) |
Mechanism and Features of Field Emission in Semiconductors |
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Zhukov N., Mikhailov A., Mosiyash D.
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| Том 50, № 10 (2016) |
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures |
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Musaev A.
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| Том 51, № 10 (2017) |
Mechanism of resistive switching in films based on partially fluorinated graphene |
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Ivanov A., Nebogatikova N., Kurkina I., Antonova I.
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| Том 53, № 11 (2019) |
Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon |
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Samosvat D., Chikalova-Luzina O., Zegrya G.
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| Том 52, № 3 (2018) |
Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity |
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Romaka V., Rogl P., Frushart D., Kaczorowski D.
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| Том 52, № 1 (2018) |
Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGdxS Thin Films |
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Kaminsky V., Soloviev S., Khavrov G., Sharenkova N.
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| Том 50, № 1 (2016) |
Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals |
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Korsunska N., Shulga E., Stara T., Litvin P., Bondarenko V.
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| Том 50, № 12 (2016) |
Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells |
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Fadeev M., Varavin V., Mikhailov N., Dvoretsky S., Gavrilenko V., Teppe F., Kozlov D., Rumyantsev V., Morozov S., Kadykov A.
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| Том 53, № 12 (2019) |
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers |
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Mokhov D., Berezovskaya T., Nikitina E., Shubina K., Mizerov A., Bouravleuv A.
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| Том 52, № 5 (2018) |
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands |
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Evropeytsev E., Semenov A., Nechaev D., Jmerik V., Kaibyshev V., Troshkov S., Brunkov P., Usikova A., Ivanov S., Toropov A.
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| Том 52, № 14 (2018) |
Metastable Bound States of the Two-Dimensional Bimagnetoexcitons in the Lowest Landau Levels Approximation |
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Moskalenko S., Khadzhi P., Podlesny I., Dumanov E., Liberman M., Zubac I.
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| Том 50, № 6 (2016) |
Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |
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Mikhaylov A., Afanasyev A., Ilyin V., Luchinin V., Reshanov S., Schöner A.
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| Том 50, № 11 (2016) |
Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser |
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Baydus N., Nekorkin S., Kolpakov D., Ershov A., Aleshkin V., Dubinov A., Afonenko A.
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| Том 50, № 2 (2016) |
Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon |
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Kryuchenko Y., Kostylyov V., Sokolovskyi I., Abramov A., Bobyl A., Panaiotti I., Terukov E., Sachenko A.
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| Том 50, № 13 (2016) |
Method of investigation of galvanomagnetic properties of CdxHg1 − xTe and CdxHg1 − xTe/Cd1 − yZnyTe |
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Golubyatnikov V., Lysenko A., Belov A., Kanevskii V.
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| Том 50, № 13 (2016) |
Methods for suppressing optical crosstalk between the cells of a silicon photomultiplier array |
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Zhukov A., Popova E., Gerasimenko N.
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| Том 50, № 13 (2016) |
Methods of accounting for inclusion-shape randomness in calculating the effective dielectric characteristics of heterogeneous textured materials |
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Zavgorodnyaya M., Lavrov I.
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| 726 - 750 из 1443 результатов |
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