| Шығарылым |
Атауы |
Файл |
| Том 51, № 8 (2017) |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties |
(Eng)
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Seredin P., Lenshin A., Khudyakov Y., Arsentyev I., Kaliuzhny N., Mintairov S., Nikolaev D., Prutskij T.
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| Том 51, № 8 (2017) |
Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) |
(Eng)
|
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Lebedev M., Lvova T., Pavlov S., Sedova I.
|
| Том 51, № 8 (2017) |
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates |
(Eng)
|
|
Sokura L., Parkhomenko Y., Moiseev K., Nevedomsky V., Bert N.
|
| Том 51, № 6 (2017) |
Influence of a static magnetic field on the formation of silicide phases in a Cu/Si(100) structure upon isothermal annealing |
(Eng)
|
|
Buchin E., Naumov V., Vasilyev S.
|
| Том 51, № 6 (2017) |
Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering |
(Eng)
|
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Kobziev V., Zakirova R., Kostenkov N., Krylov P., Fedotova I.
|
| Том 51, № 6 (2017) |
On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation |
(Eng)
|
|
Kirienko D., Berezina O.
|
| Том 51, № 6 (2017) |
Structural features of Sm1–xEuxS thin polycrystalline films |
(Eng)
|
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Kaminskii V., Solov’ev S., Khavrov G., Sharenkova N., Hirai S.
|
| Том 51, № 5 (2017) |
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD |
(Eng)
|
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Mintairov S., Kalyuzhnyy N., Maximov M., Nadtochiy A., Nevedomskiy V., Zhukov A.
|
| Том 51, № 5 (2017) |
Ab initio studies of structural, electronic, optical, elastic and thermal properties of CuGaTe2 |
(Eng)
|
|
Singh P., Sharma S., Kumari S., Saraswat V., Sharma D., Verma A.
|
| Том 51, № 4 (2017) |
Silicon nanowire array architecture for heterojunction electronics |
(Eng)
|
|
Solovan M., Brus V., Mostovyi A., Maryanchuk P., Orletskyi I., Kovaliuk T., Abashin S.
|
| Том 51, № 4 (2017) |
In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers |
(Eng)
|
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Guseynov R., Tanriverdiyev V., Kipshidze G., Aliyeva Y., Aliguliyeva K., Abdullayev N., Mamedov N.
|
| Том 51, № 4 (2017) |
Surface nanostructuring in the carbon–silicon(100) system upon microwave plasma treatment |
(Eng)
|
|
Yafarov R., Shanygin V.
|
| Том 51, № 4 (2017) |
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy |
(Eng)
|
|
Filatov D., Kazantseva I., Shengurov V., Chalkov V., Denisov S., Gorshkov A., Mishkin V.
|
| Том 51, № 3 (2017) |
Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters |
(Eng)
|
|
Lunin L., Lunina M., Devitsky O., Sysoev I.
|
| Том 51, № 3 (2017) |
Properties of ZnO:Er3+ films obtained by the sol–gel method |
(Eng)
|
|
Malyutina-Bronskaya V., Semchenko A., Sidsky V., Fedorov V.
|
| Том 51, № 3 (2017) |
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types |
(Eng)
|
|
Kukushkin S., Osipov A., Red’kov A.
|
| Том 51, № 3 (2017) |
Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures |
(Eng)
|
|
Pavlikov A., Latukhina N., Chepurnov V., Timoshenko V.
|
| Том 51, № 3 (2017) |
Effect of energy density on the target on SnO2:Sb film properties when using a high-speed particle separator |
(Eng)
|
|
Parshina L., Khramova O., Novodvorsky O., Lotin A., Petukhov I., Putilin F., Shcherbachev K.
|
| Том 51, № 2 (2017) |
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates |
(Eng)
|
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Kryzhanovskaya N., Polubavkina Y., Nevedomskiy V., Nikitina E., Lazarenko A., Egorov A., Maximov M., Moiseev E., Zhukov A.
|
| Том 51, № 2 (2017) |
The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination |
(Eng)
|
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Arapov Y., Gudina S., Klepikova A., Neverov V., Harus G., Shelushinina N., Yakunin M.
|
| Том 51, № 1 (2017) |
Surface texture of single-crystal silicon oxidized under a thin V2O5 layer |
(Eng)
|
|
Nikitin S., Verbitskiy V., Nashchekin A., Trapeznikova I., Bobyl A., Terukova E.
|
| Том 51, № 1 (2017) |
Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies |
(Eng)
|
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Kudryashov D., Gudovskikh A., Babichev A., Filimonov A., Mozharov A., Agekyan V., Borisov E., Serov A., Filosofov N.
|
| Том 51, № 1 (2017) |
On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire |
(Eng)
|
|
Zubrilov A., Gorbunov R., Latishev F., Bochkareva N., Lelikov Y., Tarkhin D., Smirnov A., Davydov V., Sheremet I., Shreter Y., Voronenkov V., Virko M., Kogotkov V., Leonidov A., Pinchuk A.
|
| Том 51, № 1 (2017) |
Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types |
(Eng)
|
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Seredin P., Lenshin A., Arsentiev I., Zhabotinskii A., Nikolaev D., Tarasov I., Shamakhov V., Prutskij T., Leiste H., Rinke M.
|
| Том 51, № 1 (2017) |
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
(Eng)
|
|
Khairnar A., Patil V., Agrawal K., Salunke R., Mahajan A.
|
| Нәтижелер 135 - 76/100 |
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