| Issue |
Title |
File |
| Vol 52, No 6 (2018) |
Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate |
(Eng)
|
|
Aleksandrov O.V., Mokrushina S.A.
|
| Vol 52, No 3 (2018) |
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE |
(Eng)
|
|
Khvostikov V.P., Sorokina S.V., Potapovich N.S., Khvostikova O.A., Timoshina N.K., Shvarts M.Z.
|
| Vol 52, No 3 (2018) |
Influence of Heat Dissipation Conditions on the Characteristics of Concentrator Photoelectric Modules |
(Eng)
|
|
Andreeva A.V., Davidyuk N.Y., Malevskiy D.A., Panchak A.N., Sadchikov N.A., Chekalin A.V.
|
| Vol 52, No 3 (2018) |
Optimal Doping of Diode Current Interrupters |
(Eng)
|
|
Kyuregyan A.S.
|
| Vol 52, No 3 (2018) |
Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model |
(Eng)
|
|
Altukhov V.I., Sankin A.V., Sigov A.S., Sysoev D.K., Yanukyan E.G., Filippova S.V.
|
| Vol 52, No 3 (2018) |
Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films |
(Eng)
|
|
Smirnov V.A., Mokrushin A.D., Denisov N.N., Dobrovolskii Y.A.
|
| Vol 52, No 3 (2018) |
Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities |
(Eng)
|
|
Manyakhin F.I.
|
| Vol 52, No 2 (2018) |
Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC |
(Eng)
|
|
Solovan M.N., Andrushchak G.O., Mostovyi A.I., Kovaliuk T.T., Brus V.V., Maryanchuk P.D.
|
| Vol 52, No 2 (2018) |
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures |
(Eng)
|
|
Tyaginov S.E., Makarov A.A., Jech M., Vexler M.I., Franco J., Kaczer B., Grasser T.
|
| Vol 52, No 2 (2018) |
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers |
(Eng)
|
|
Zubov F.I., Maximov M.V., Gordeev N.Y., Polubavkina Y.S., Zhukov A.E.
|
| Vol 52, No 1 (2018) |
Two-Terminal Tandem Solar Cells DSC/c-Si: Optimization of TiO2-based Photoelectrode Parameters |
(Eng)
|
|
Nikolskaia A.B., Vildanova M.F., Kozlov S.S., Shevaleevskiy O.I.
|
| Vol 52, No 1 (2018) |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
(Eng)
|
|
Blokhin S.A., Bobrov M.A., Blokhin A.A., Kuzmenkov A.G., Vasil’ev A.P., Zadiranov Y.M., Evropeytsev E.A., Sakharov A.V., Ledentsov N.N., Karachinsky L.Y., Ospennikov A.M., Maleev N.A., Ustinov V.M.
|
| Vol 52, No 1 (2018) |
On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel |
(Eng)
|
|
Ivanov P.A.
|
| Vol 51, No 12 (2017) |
Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode |
(Eng)
|
|
Padma R., Rajagopal Reddy V.
|
| Vol 51, No 12 (2017) |
Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts |
(Eng)
|
|
Liaw Y., Liao W., Wang M., Chen C., Li D., Gu H., Zou X.
|
| Vol 51, No 12 (2017) |
Single electron transistor: Energy-level broadening effect and thermionic contribution |
(Eng)
|
|
Nasri A., Boubaker A., Khaldi W., Hafsi B., Kalboussi A.
|
| Vol 51, No 10 (2017) |
Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation |
(Eng)
|
|
Vikulin I.M., Gorbachev V.E., Kurmashev S.D.
|
| Vol 51, No 10 (2017) |
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well |
(Eng)
|
|
Dikareva N.V., Zvonkov B.N., Vikhrova O.V., Nekorkin S.M., Aleshkin V.Y., Dubinov A.A.
|
| Vol 51, No 9 (2017) |
High-voltage MIS-gated GaN transistors |
(Eng)
|
|
Erofeev E.V., Fedin I.V., Fedina V.V., Stepanenko M.V., Yuryeva A.V.
|
| Vol 51, No 9 (2017) |
Derivation of an analytical expression for a physical process from an experimental curve with kinks |
(Eng)
|
|
Davydov V.N., Kharitonov S.V., Lugina N.E., Melnik K.P.
|
| Vol 51, No 9 (2017) |
Degradation of micromorphous thin-film silicon (α-Si/μc-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring |
(Eng)
|
|
Bogdanov D.A., Gorbatovskii G.A., Verbitskii V.N., Bobyl A.V., Terukov E.I.
|
| Vol 51, No 9 (2017) |
Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |
(Eng)
|
|
Bochkareva N.I., Voronenkov V.V., Gorbunov R.I., Virko M.V., Kogotkov V.S., Leonidov A.A., Vorontsov-Velyaminov P.N., Sheremet I.A., Shreter Y.G.
|
| Vol 51, No 9 (2017) |
Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode |
(Eng)
|
|
Yuferev V.S., Levinshtein M.E., Ivanov P.A., Zhang J.Q., Palmour J.W.
|
| Vol 51, No 9 (2017) |
Electric-field sensor based on a double quantum dot in a microcavity |
(Eng)
|
|
Tsukanov A.V., Chekmachev V.G.
|
| Vol 51, No 9 (2017) |
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process |
(Eng)
|
|
Kyuregyan A.S.
|
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