| Issue |
Title |
File |
| Vol 52, No 2 (2018) |
Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime |
(Eng)
|
|
Ormont M.A., Zvyagin I.P.
|
| Vol 52, No 2 (2018) |
Dielectric Properties and Conductivity of Ag-Doped TlGaS2 Single Crystals |
(Eng)
|
|
Mustafaeva S.N., Asadov S.M., Kerimova E.M.
|
| Vol 52, No 2 (2018) |
Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures |
(Eng)
|
|
Kažukauskas V., Garbačauskas R., Savicki S.
|
| Vol 52, No 2 (2018) |
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers |
(Eng)
|
|
Sobolev M.M., Soldatenkov F.Y.
|
| Vol 52, No 1 (2018) |
On Mobility of Definite Energy Charge Carriers |
(Eng)
|
|
Belousov Y.M., Gorelkin V.N., Chernousov I.V.
|
| Vol 52, No 1 (2018) |
Effect of Hydrostatic Pressure on the Static Permittivity of Germanium |
(Eng)
|
|
Musaev A.M.
|
| Vol 51, No 12 (2017) |
Radiation-produced defects in germanium: Experimental data and models of defects |
(Eng)
|
|
Emtsev V.V., Kozlovski V.V., Poloskin D.S., Oganesyan G.A.
|
| Vol 51, No 12 (2017) |
Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method |
(Eng)
|
|
El Ouchdi A.A., Bouazza B., Belhadji Y., Massoum N.
|
| Vol 51, No 10 (2017) |
Effects of local photoexcitation of high-concentration charge carriers in silicon |
(Eng)
|
|
Musaev A.M.
|
| Vol 51, No 9 (2017) |
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range |
(Eng)
|
|
Karachinsky L.Y., Novikov I.I., Blokhin S.A., Bobrov M.A., Zadiranov Y.M., Troshkov S.I., Egorov A.Y., Babichev A.V., Kryzhanovskaya N.V., Moiseev E.I., Gladyshev A.G.
|
| Vol 51, No 9 (2017) |
Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon |
(Eng)
|
|
Sobolev N.A., Kalyadin A.E., Shek E.I., Shtel’makh K.F.
|
| Vol 51, No 9 (2017) |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties |
(Eng)
|
|
Seredin P.V., Goloshchapov D.L., Lenshin A.S., Lukin A.N., Khudyakov Y.Y., Arsentyev I.N., Prutskij T.
|
| Vol 51, No 9 (2017) |
Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper |
(Eng)
|
|
Prokofieva L.V., Nasredinov F.S., Konstantinov P.P., Shabaldin A.A.
|
| Vol 51, No 8 (2017) |
Complex structure of optical transitions from the core d-levels of InAs and InSb crystals |
(Eng)
|
|
Sobolev V.V., Perevoshchikov D.A.
|
| Vol 51, No 8 (2017) |
Impurity levels in Hg3In2Te6 crystals |
(Eng)
|
|
Chupyra S.M., Grushka O.G., Bilichuk S.V.
|
| Vol 51, No 7 (2017) |
Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it |
(Eng)
|
|
Gaidar G.P., Baranskii P.I.
|
| Vol 51, No 7 (2017) |
Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals |
(Eng)
|
|
Abdullayev N.A., Jafarli K.M., Aliguliyeva K.V., Aliyeva L.N., Kahramanov S.S., Nemov S.A.
|
| Vol 51, No 6 (2017) |
Electrical properties of ZnSe crystals doped with transition elements |
(Eng)
|
|
Nitsuk Y.A., Vaksman Y.F.
|
| Vol 51, No 6 (2017) |
Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field |
(Eng)
|
|
Rekhviashvili S.S., Alikhanov A.A.
|
| Vol 51, No 6 (2017) |
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates |
(Eng)
|
|
Galiev G.B., Klochkov A.N., Vasil’evskii I.S., Klimov E.A., Pushkarev S.S., Vinichenko A.N., Khabibullin R.A., Maltsev P.P.
|
| Vol 51, No 5 (2017) |
Ab initio calculations of phonon dispersion in CdGa2Se4 |
(Eng)
|
|
Dzhakhangirli Z.A., Kerimova T.G., Abdullayev N.A., Mamedova I.A., Mamedov N.T.
|
| Vol 51, No 5 (2017) |
Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering |
(Eng)
|
|
Mezdrogina M.M., Vinogradov A.Y., Levitskii V.S., Terukova E.E., Kozhanova Y.V., Aglikov A.S.
|
| Vol 51, No 5 (2017) |
Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs |
(Eng)
|
|
Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivonosov A.N.
|
| Vol 51, No 4 (2017) |
On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi1–xSbx (0.07 ≤ x ≤ 0.2) |
(Eng)
|
|
Muntyanu F.M., Gheorghitsa E.I., Gilewski A., Chistol V., Bejan V., Munteanu V.
|
| Vol 51, No 3 (2017) |
Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength |
(Eng)
|
|
Bannaya V.F.
|
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