| Шығарылым |
Атауы |
Файл |
| Том 45, № 1 (2016) |
The circuit and functional blocks for radiation-hard transceiver LSICs in SOI CMOS |
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Nazarova G., Elesin V., Nikiforov A., Kuznetsov A., Usachev N., Amburkin D.
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| Том 45, № 2 (2016) |
The detection limit of curved InGaAs/AlGaAs/GaAs hall bars |
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Chesnitskiy A., Mikhantiev E.
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| Том 45, № 8-9 (2016) |
The development of a purification technique of metallurgical silicon to silicon of the solar brand |
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Maronchuk I., Maronchuk I., Sanikovich D., Shirokov I.
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| Том 48, № 4 (2019) |
The Effect of an N2 Additive on the GaAs Etching Rate in CF2Cl2 Plasma |
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Pivovarenok S.
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| Том 48, № 1 (2019) |
The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs |
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Enisherlova K., Kolkovskii Y., Bobrova E., Temper E., Kapilin S.
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| Том 48, № 8 (2019) |
The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT |
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Enisherlova K., Medvedev B., Temper E., Korneev V.
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| Том 45, № 8-9 (2016) |
The effect of the base composition and microstructure of nickel-zinc ferrites on the level of absorption of electromagnetic radiation |
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Andreev V., Men’shova S., Kostishyn V., Chitanov D., Klimov A., Kirina A., Vergazov R., Bibikov S., Prokof’ev M.
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| Том 47, № 4 (2018) |
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N2 Plasma |
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Pivovarenok S.
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| Том 47, № 2 (2018) |
The Element of Matching on an STG DICE Cell for an Upset Tolerant Content Addressable Memory |
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Katunin Y., Stenin V.
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| Том 45, № 2 (2016) |
The influence of boundary conditions on the electrical conductivity of a thin cylindrical wire |
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Kuznetsova I., Savenko O., Yushkanov A.
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| Том 48, № 8 (2019) |
The Influence of Substitution with Aluminum on the Field of Effective Magnetic Anisotropy and the Degree of Magnetic Texture of Anisotropic Polycrystalline Hexagonal Ferrites of Barium and Strontium for Substrates of Microstrip Devices of Microwave Electronics |
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Shcherbakov S., Nalogin A., Kostishin V., Alekseev A., Belokon E., Isaev I.
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| Том 47, № 7 (2018) |
The Influence of the Dopant Concentration in a Silicon Film on the Magnetic Sensitivity of SOI Field-Effect Hall Sensors |
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Korolev M., Kozlov A., Krasukov A., Devlikanova S.
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| Том 46, № 8 (2017) |
The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them |
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Enisherlova K., Goryachev V., Saraykin V., Kapilin S.
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| Том 47, № 5 (2018) |
The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer |
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Makhviladze T., Sarychev M.
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| Том 45, № 8-9 (2016) |
The nature of thermoacceptors in electron-irradiated high-resistance silicon |
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Kobeleva S.
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| Том 46, № 8 (2017) |
The Standard Model of the Heterostructure for Microwave Devices |
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Abgaryan K., Kharchenko V.
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| Том 46, № 6 (2017) |
The Use of Finite Element Modeling for Calculating the C-V Curve of Capacitor Mems Microphone |
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Grigor’ev D., Godovitsyn I., Amelichev V., Generalov S., Polomoshnov S.
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| Том 45, № 8-9 (2016) |
Theoretical investigation of the electronic and structural properties of AlN thin films |
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Abgaryan K., Bazhanov D., Mutigullin I.
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| Том 47, № 7 (2018) |
Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect |
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Sergeev V., Hodakov A.
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| Том 45, № 4 (2016) |
Thin film negative electrode based on silicon composite for lithium-ion batteries |
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Airapetov A., Vasiliev S., Kulova T., Lebedev M., Metlitskaya A., Mironenko A., Nikol’skaya N., Odinokov V., Pavlov G., Pukhov D., Rudyi A., Skundin A., Sologub V., Fedorov I., Churilov A.
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| Том 45, № 5 (2016) |
Thin-film positive electrode based on vanadium oxides for lithium-ion accumulators |
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Vasil’ev S., Gerashchenko V., Kulova T., Lebedev M., Mazaletskii L., Metlitskaya A., Mironenko A., Moskovskii S., Nikol’skaya N., Pukhov D., Rudyi A., Skundin A., Sologub V., Fedorov I., Churilov A.
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| Том 46, № 6 (2017) |
Total Efficiency of the Optical-to-Terahertz Conversion in Photoconductive Antennas Based on LT-GaAs and In0.38Ga0.62As |
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Glinskiy I., Khabibullin R., Ponomarev D.
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| Том 46, № 1 (2017) |
Two-view tomography of low-temperature plasma |
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Fadeev A., Rudenko K.
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| Том 45, № 6 (2016) |
Upset-resilient RAM on STG DICE memory elements with the spaced transistors into two groups |
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Stenin V., Katunin Y., Stepanov P.
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| Том 46, № 7 (2017) |
Use of Silicon-Germanium Technology for the Development of Active Microwave Units of Active Electronically Scanned Arrays |
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Timoshenkov V., Efimov A.
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| Нәтижелер 331 - 301/325 |
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