| Issue |
Title |
File |
| Vol 45, No 1 (2016) |
The circuit and functional blocks for radiation-hard transceiver LSICs in SOI CMOS |
|
|
Nazarova G.N., Elesin V.V., Nikiforov A.Y., Kuznetsov A.G., Usachev N.A., Amburkin D.M.
|
| Vol 45, No 2 (2016) |
The detection limit of curved InGaAs/AlGaAs/GaAs hall bars |
|
|
Chesnitskiy A.V., Mikhantiev E.A.
|
| Vol 45, No 8-9 (2016) |
The development of a purification technique of metallurgical silicon to silicon of the solar brand |
|
|
Maronchuk I.I., Maronchuk I.E., Sanikovich D.D., Shirokov I.B.
|
| Vol 48, No 4 (2019) |
The Effect of an N2 Additive on the GaAs Etching Rate in CF2Cl2 Plasma |
|
|
Pivovarenok S.A.
|
| Vol 48, No 1 (2019) |
The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs |
|
|
Enisherlova K.L., Kolkovskii Y.V., Bobrova E.A., Temper E.M., Kapilin S.A.
|
| Vol 48, No 8 (2019) |
The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT |
|
|
Enisherlova K.L., Medvedev B.K., Temper E.M., Korneev V.I.
|
| Vol 45, No 8-9 (2016) |
The effect of the base composition and microstructure of nickel-zinc ferrites on the level of absorption of electromagnetic radiation |
|
|
Andreev V.G., Men’shova S.B., Kostishyn V.G., Chitanov D.N., Klimov A.N., Kirina A.Y., Vergazov R.M., Bibikov S.B., Prokof’ev M.V.
|
| Vol 47, No 4 (2018) |
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N2 Plasma |
|
|
Pivovarenok S.A.
|
| Vol 47, No 2 (2018) |
The Element of Matching on an STG DICE Cell for an Upset Tolerant Content Addressable Memory |
|
|
Katunin Y.V., Stenin V.Y.
|
| Vol 45, No 2 (2016) |
The influence of boundary conditions on the electrical conductivity of a thin cylindrical wire |
|
|
Kuznetsova I.A., Savenko O.V., Yushkanov A.A.
|
| Vol 48, No 8 (2019) |
The Influence of Substitution with Aluminum on the Field of Effective Magnetic Anisotropy and the Degree of Magnetic Texture of Anisotropic Polycrystalline Hexagonal Ferrites of Barium and Strontium for Substrates of Microstrip Devices of Microwave Electronics |
|
|
Shcherbakov S.V., Nalogin A.G., Kostishin V.G., Alekseev A.A., Belokon E.A., Isaev I.M.
|
| Vol 47, No 7 (2018) |
The Influence of the Dopant Concentration in a Silicon Film on the Magnetic Sensitivity of SOI Field-Effect Hall Sensors |
|
|
Korolev M., Kozlov A., Krasukov A., Devlikanova S.
|
| Vol 46, No 8 (2017) |
The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them |
|
|
Enisherlova K.L., Goryachev V.G., Saraykin V.V., Kapilin S.A.
|
| Vol 47, No 5 (2018) |
The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer |
|
|
Makhviladze T.M., Sarychev M.E.
|
| Vol 45, No 8-9 (2016) |
The nature of thermoacceptors in electron-irradiated high-resistance silicon |
|
|
Kobeleva S.P.
|
| Vol 46, No 8 (2017) |
The Standard Model of the Heterostructure for Microwave Devices |
|
|
Abgaryan K.K., Kharchenko V.A.
|
| Vol 46, No 6 (2017) |
The Use of Finite Element Modeling for Calculating the C-V Curve of Capacitor Mems Microphone |
|
|
Grigor’ev D.M., Godovitsyn I.V., Amelichev V.V., Generalov S.S., Polomoshnov S.A.
|
| Vol 45, No 8-9 (2016) |
Theoretical investigation of the electronic and structural properties of AlN thin films |
|
|
Abgaryan K.K., Bazhanov D.I., Mutigullin I.V.
|
| Vol 47, No 7 (2018) |
Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect |
|
|
Sergeev V.A., Hodakov A.M.
|
| Vol 45, No 4 (2016) |
Thin film negative electrode based on silicon composite for lithium-ion batteries |
|
|
Airapetov A.A., Vasiliev S.V., Kulova T.L., Lebedev M.E., Metlitskaya A.V., Mironenko A.A., Nikol’skaya N.F., Odinokov V.V., Pavlov G.Y., Pukhov D.E., Rudyi A.S., Skundin A.M., Sologub V.A., Fedorov I.S., Churilov A.B.
|
| Vol 45, No 5 (2016) |
Thin-film positive electrode based on vanadium oxides for lithium-ion accumulators |
|
|
Vasil’ev S.V., Gerashchenko V.N., Kulova T.L., Lebedev M.E., Mazaletskii L.A., Metlitskaya A.V., Mironenko A.A., Moskovskii S.B., Nikol’skaya N.F., Pukhov D.E., Rudyi A.S., Skundin A.M., Sologub V.A., Fedorov I.S., Churilov A.B.
|
| Vol 46, No 6 (2017) |
Total Efficiency of the Optical-to-Terahertz Conversion in Photoconductive Antennas Based on LT-GaAs and In0.38Ga0.62As |
|
|
Glinskiy I.A., Khabibullin R.A., Ponomarev D.S.
|
| Vol 46, No 1 (2017) |
Two-view tomography of low-temperature plasma |
|
|
Fadeev A.V., Rudenko K.V.
|
| Vol 45, No 6 (2016) |
Upset-resilient RAM on STG DICE memory elements with the spaced transistors into two groups |
|
|
Stenin V.Y., Katunin Y.V., Stepanov P.V.
|
| Vol 46, No 7 (2017) |
Use of Silicon-Germanium Technology for the Development of Active Microwave Units of Active Electronically Scanned Arrays |
|
|
Timoshenkov V.P., Efimov A.G.
|
| 301 - 325 of 331 Items |
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