| Issue |
Title |
File |
| Vol 47, No 4 (2018) |
A Thin-Film Platform for Chemical Gas Sensors |
(Eng)
|
|
Roslyakov I.V., Napolskii K.S., Stolyarov V.S., Karpov E.E., Ivashev A.V., Surtaev V.N.
|
| Vol 47, No 4 (2018) |
Structuring Copper in the Plasma Medium of a High-Frequency Discharge |
(Eng)
|
|
Dunaev A.V., Murin D.B.
|
| Vol 47, No 4 (2018) |
On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF4 + C4F8 + Ar Mixture on the Parameters of Plasma and SiO2/Si Etching Selectivity |
(Eng)
|
|
Efremov A.M., Murin D.B., Kwon K.
|
| Vol 47, No 4 (2018) |
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N2 Plasma |
(Eng)
|
|
Pivovarenok S.A.
|
| Vol 47, No 4 (2018) |
Simulation of the Characteristics of Double-Gate Asymmetrically Doped SOI CMOS Nanotransistors |
(Eng)
|
|
Masalsky N.V.
|
| Vol 47, No 4 (2018) |
Quantum Gates with Spin States in Continuous Microwave Field |
(Eng)
|
|
Zinovieva A.F., Nenashev A.V., Koshkarev A.A., Zarodnyuk T.S., Gornov A.Y., Dvurechenskii A.V.
|
| Vol 47, No 4 (2018) |
Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon Crystals |
(Eng)
|
|
Yafarov R.K., Timoshenkov V.P.
|
| Vol 47, No 3 (2018) |
Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes |
(Eng)
|
|
Miakonkikh A.V., Orlikovskiy N.A., Rogozhin A.E., Tatarintsev A.A., Rudenko K.V.
|
| Vol 47, No 3 (2018) |
Helium Bubbles Formed in Si(001) Layers after High-Dose Implantation and Thermal Annealing |
(Eng)
|
|
Lomov A.A., Myakonkikh A.V., Chesnokov Y.M.
|
| Vol 47, No 3 (2018) |
Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions |
(Eng)
|
|
Chumakov A.I.
|
| Vol 47, No 3 (2018) |
Geometric Effects in Current-Voltage Characteristics of a Cross-Shaped MDM Ni/NiO/Fe Structure |
(Eng)
|
|
Malikov I.V., Berezin V.A., Fomin L.A., Mikhailov G.M.
|
| Vol 47, No 3 (2018) |
Magnetic Force Microscopy of Iron and Nickel Nanowires Fabricated by the Matrix Synthesis Technique |
(Eng)
|
|
Bizyaev D.A., Bukharaev A.A., Khaibullin R.I., Lyadov N.M., Zagorskii D.L., Bedin S.A., Doludenko I.M.
|
| Vol 47, No 3 (2018) |
Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements |
(Eng)
|
|
Benediktov A.S., Shelepin N.A., Ignatov P.V., Mikhailov A.A., Potupchik A.G.
|
| Vol 47, No 3 (2018) |
Calculating the High-Frequency Electrical Conductivity of a Thin Metallic Layer for an Ellipsoidal Fermi Surface |
(Eng)
|
|
Kuznetsova I.A., Romanov D.N., Yushkanov A.A.
|
| Vol 47, No 3 (2018) |
Finite Element Simulation of Frequency Response of MEMS-Microphone |
(Eng)
|
|
Grigor’ev D.M., Godovitsyn I.V., Amelichev V.V., Generalov S.S.
|
| Vol 47, No 3 (2018) |
Experimental Evaluation of Reliability of Deep Submicron SOI MOS Transistors at High Temperatures |
(Eng)
|
|
Benediktov A.S., Shelepin N.A., Ignatov P.V.
|
| Vol 47, No 2 (2018) |
Generation and Concentration of Terahertz Radiation in a Microcavity with an Open Quantum Dot |
(Eng)
|
|
Tsukanov A.V., Kateev I.Y.
|
| Vol 47, No 2 (2018) |
Electrophysical Parameters and Radiation Spectra of Boron Trichloride Plasma |
(Eng)
|
|
Murin D.B., Dunaev A.V.
|
| Vol 47, No 2 (2018) |
Field Emission Properties of Nanostructured Silicon Cathode Arrays |
(Eng)
|
|
Yafarov R.K., Suzdaltsev S.Y., Shanygin V.Y.
|
| Vol 47, No 2 (2018) |
Influence of Technological Modes on the Electrophysical Properties of Films of Polyacrylonitrile Doped with Metal Particles |
(Eng)
|
|
Bednaya T.A., Konovalenko S.P.
|
| Vol 47, No 2 (2018) |
Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia |
(Eng)
|
|
Abdulagatov A.I., Ramazanov S.M., Dallaev R.S., Murliev E.K., Palchaev D.K., Rabadanov M.K., Abdulagatov I.M.
|
| Vol 47, No 2 (2018) |
Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier Height |
(Eng)
|
|
Kerimov E.A., Kazymov N.F., Musaeva S.N.
|
| Vol 47, No 2 (2018) |
Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer |
(Eng)
|
|
Aleshin A.N., Zenchenko N.V., Ponomarev D.S., Ruban O.A.
|
| Vol 47, No 2 (2018) |
The Element of Matching on an STG DICE Cell for an Upset Tolerant Content Addressable Memory |
(Eng)
|
|
Katunin Y.V., Stenin V.Y.
|
| Vol 47, No 1 (2018) |
Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm |
(Eng)
|
|
Rudenko K.V., Myakon’kikh A.V., Rogozhin A.E., Gushchin O.P., Gvozdev V.A.
|
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