| 期 |
标题 |
文件 |
| 卷 47, 编号 4 (2018) |
A Thin-Film Platform for Chemical Gas Sensors |
(Eng)
|
|
Roslyakov I., Napolskii K., Stolyarov V., Karpov E., Ivashev A., Surtaev V.
|
| 卷 47, 编号 4 (2018) |
Structuring Copper in the Plasma Medium of a High-Frequency Discharge |
(Eng)
|
|
Dunaev A., Murin D.
|
| 卷 47, 编号 4 (2018) |
On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF4 + C4F8 + Ar Mixture on the Parameters of Plasma and SiO2/Si Etching Selectivity |
(Eng)
|
|
Efremov A., Murin D., Kwon K.
|
| 卷 47, 编号 4 (2018) |
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N2 Plasma |
(Eng)
|
|
Pivovarenok S.
|
| 卷 47, 编号 4 (2018) |
Simulation of the Characteristics of Double-Gate Asymmetrically Doped SOI CMOS Nanotransistors |
(Eng)
|
|
Masalsky N.
|
| 卷 47, 编号 4 (2018) |
Quantum Gates with Spin States in Continuous Microwave Field |
(Eng)
|
|
Zinovieva A., Nenashev A., Koshkarev A., Zarodnyuk T., Gornov A., Dvurechenskii A.
|
| 卷 47, 编号 4 (2018) |
Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon Crystals |
(Eng)
|
|
Yafarov R., Timoshenkov V.
|
| 卷 47, 编号 3 (2018) |
Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes |
(Eng)
|
|
Miakonkikh A., Orlikovskiy N., Rogozhin A., Tatarintsev A., Rudenko K.
|
| 卷 47, 编号 3 (2018) |
Helium Bubbles Formed in Si(001) Layers after High-Dose Implantation and Thermal Annealing |
(Eng)
|
|
Lomov A., Myakonkikh A., Chesnokov Y.
|
| 卷 47, 编号 3 (2018) |
Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions |
(Eng)
|
|
Chumakov A.
|
| 卷 47, 编号 3 (2018) |
Geometric Effects in Current-Voltage Characteristics of a Cross-Shaped MDM Ni/NiO/Fe Structure |
(Eng)
|
|
Malikov I., Berezin V., Fomin L., Mikhailov G.
|
| 卷 47, 编号 3 (2018) |
Magnetic Force Microscopy of Iron and Nickel Nanowires Fabricated by the Matrix Synthesis Technique |
(Eng)
|
|
Bizyaev D., Bukharaev A., Khaibullin R., Lyadov N., Zagorskii D., Bedin S., Doludenko I.
|
| 卷 47, 编号 3 (2018) |
Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements |
(Eng)
|
|
Benediktov A., Shelepin N., Ignatov P., Mikhailov A., Potupchik A.
|
| 卷 47, 编号 3 (2018) |
Calculating the High-Frequency Electrical Conductivity of a Thin Metallic Layer for an Ellipsoidal Fermi Surface |
(Eng)
|
|
Kuznetsova I., Romanov D., Yushkanov A.
|
| 卷 47, 编号 3 (2018) |
Finite Element Simulation of Frequency Response of MEMS-Microphone |
(Eng)
|
|
Grigor’ev D., Godovitsyn I., Amelichev V., Generalov S.
|
| 卷 47, 编号 3 (2018) |
Experimental Evaluation of Reliability of Deep Submicron SOI MOS Transistors at High Temperatures |
(Eng)
|
|
Benediktov A., Shelepin N., Ignatov P.
|
| 卷 47, 编号 2 (2018) |
Generation and Concentration of Terahertz Radiation in a Microcavity with an Open Quantum Dot |
(Eng)
|
|
Tsukanov A., Kateev I.
|
| 卷 47, 编号 2 (2018) |
Electrophysical Parameters and Radiation Spectra of Boron Trichloride Plasma |
(Eng)
|
|
Murin D., Dunaev A.
|
| 卷 47, 编号 2 (2018) |
Field Emission Properties of Nanostructured Silicon Cathode Arrays |
(Eng)
|
|
Yafarov R., Suzdaltsev S., Shanygin V.
|
| 卷 47, 编号 2 (2018) |
Influence of Technological Modes on the Electrophysical Properties of Films of Polyacrylonitrile Doped with Metal Particles |
(Eng)
|
|
Bednaya T., Konovalenko S.
|
| 卷 47, 编号 2 (2018) |
Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia |
(Eng)
|
|
Abdulagatov A., Ramazanov S., Dallaev R., Murliev E., Palchaev D., Rabadanov M., Abdulagatov I.
|
| 卷 47, 编号 2 (2018) |
Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier Height |
(Eng)
|
|
Kerimov E., Kazymov N., Musaeva S.
|
| 卷 47, 编号 2 (2018) |
Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer |
(Eng)
|
|
Aleshin A., Zenchenko N., Ponomarev D., Ruban O.
|
| 卷 47, 编号 2 (2018) |
The Element of Matching on an STG DICE Cell for an Upset Tolerant Content Addressable Memory |
(Eng)
|
|
Katunin Y., Stenin V.
|
| 卷 47, 编号 1 (2018) |
Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm |
(Eng)
|
|
Rudenko K., Myakon’kikh A., Rogozhin A., Gushchin O., Gvozdev V.
|
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