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卷 53, 编号 10 (2019)
Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles
Sobolev M., Yavsin D., Gurevich S.
PDF
(Eng)
卷 53, 编号 8 (2019)
Nanostructured ITO/SiO2 Coatings
Markov L., Pavluchenko A., Smirnova I.
PDF
(Eng)
卷 52, 编号 9 (2018)
Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide
Shiryaev A., Vorotyntsev V., Shobolov E.
PDF
(Eng)
卷 50, 编号 4 (2016)
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P., Donskov A., Dukhnovsky M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
PDF
(Eng)
卷 50, 编号 2 (2016)
Electroluminescence properties of LEDs based on electron-irradiated p-Si
Sobolev N., Shtel’makh K., Kalyadin A., Aruev P., Zabrodskiy V., Shek E., Yang D.
PDF
(Eng)
卷 53, 编号 12 (2019)
Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method
Shchukin V., Konstantinov V., Sharafutdinov R.
PDF
(Eng)
卷 53, 编号 10 (2019)
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates
Novikov A., Yurasov D., Baidakova N., Bushuykin P., Andreev B., Yunin P., Drozdov M., Yablonskiy A., Kalinnikov M., Krasilnik Z.
PDF
(Eng)
卷 53, 编号 8 (2019)
Diffusion and Interaction of In and As Implanted into SiO2 Films
Tyschenko I., Voelskow M., Mikhaylov A., Tetelbaum D.
PDF
(Eng)
卷 51, 编号 13 (2017)
Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy
Sokolov E., Fedotov S., Statsenko V., Timoshenkov S., Emelyanov A.
PDF
(Eng)
卷 50, 编号 4 (2016)
Simulation of the real efficiencies of high-efficiency silicon solar cells
Sachenko A., Skrebtii A., Korkishko R., Kostylyov V., Kulish N., Sokolovskyi I.
PDF
(Eng)
卷 50, 编号 2 (2016)
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
Kalyadin A., Sobolev N., Strel’chuk A., Aruev P., Zabrodskiy V., Shek E.
PDF
(Eng)
卷 53, 编号 12 (2019)
Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States
Romanov V., Kozhevnikov V., Bagraev N.
PDF
(Eng)
卷 53, 编号 9 (2019)
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
Prokhorov D., Shengurov V., Denisov S., Filatov D., Zdoroveishev A., Chalkov V., Zaitsev A., Ved’ M., Dorokhin M., Baidakova N.
PDF
(Eng)
卷 52, 编号 15 (2018)
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition
Novak A., Novak V., Dedkova A., Gusev E.
PDF
(Eng)
卷 50, 编号 4 (2016)
Polytype inclusions and polytype stability in silicon-carbide crystals
Avrov D., Lebedev A., Tairov Y.
PDF
(Eng)
卷 50, 编号 2 (2016)
Si:Si LEDs with room-temperature dislocation-related luminescence
Sobolev N., Kalyadin A., Konovalov M., Aruev P., Zabrodskiy V., Shek E., Shtel’makh K., Mikhaylov A., Tetel’baum D.
PDF
(Eng)
卷 53, 编号 12 (2019)
De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States
Romanov V., Kozhevnikov V., Tracey C., Bagraev N.
PDF
(Eng)
卷 53, 编号 9 (2019)
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation
Zhukavin R., Pavlov S., Pohl A., Abrosimov N., Riemann H., Redlich B., Hübers H., Shastin V.
PDF
(Eng)
卷 52, 编号 12 (2018)
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface
Agrinskaya N., Lebedev A., Lebedev S., Shakhov M., Lahderanta E.
PDF
(Eng)
卷 50, 编号 13 (2016)
Methods for suppressing optical crosstalk between the cells of a silicon photomultiplier array
Zhukov A., Popova E., Gerasimenko N.
PDF
(Eng)
卷 50, 编号 4 (2016)
Electronic structure of Pt-substituted clathrate silicides Ba8PtxSi46–x(x = 4–6)
Borshch N.
PDF
(Eng)
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