| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 5 (2016) |
Spectroscopy, Interaction with Radiation |
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate |
|
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser |
|
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes |
|
| 卷 51, 编号 1 (2017) |
Physics of Semiconductor Devices |
Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate |
|
| 卷 51, 编号 5 (2017) |
Physics of Semiconductor Devices |
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates |
|
| 卷 51, 编号 10 (2017) |
Physics of Semiconductor Devices |
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Optical thyristor based on GaAs/InGaP materials |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
|
| 卷 52, 编号 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
|
| 卷 52, 编号 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates |
|
| 卷 53, 编号 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons |
|
| 卷 53, 编号 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD |
|
| 卷 53, 编号 12 (2019) |
Physics of Semiconductor Devices |
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells |
|
