Мақалалар тізімі

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Том 50, № 1 (2016) Erratum to: “Vacancies in epitaxial graphene”
Davydov S.
Том 52, № 15 (2018) Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures
Gudina S., Vasil’evskii I., Yakunin M., Shelushinina N., Podgornykh S., Savelyev A., Neverov V., Ilchenko E., Arapov Y., Vinichenko A.
Том 53, № 10 (2019) Erratum to: Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas
Khmissi H., El Sayed A.
Том 52, № 16 (2018) Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions
Sibirev N., Belyaev V., Berdnikov Y.
Том 51, № 7 (2017) Estimation of the band gap of a series of new thermoelectric materials
Kretova M., Korzhuev M.
Том 50, № 8 (2016) Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation
Aleksandrov P., Baranova E., Budaragin V.
Том 52, № 12 (2018) Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe
Fefelov S., Kazakova L., Bogoslovskiy N., Tsendin K.
Том 53, № 16 (2019) Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB
Mitrofanov M., Voznyuk G., Rodin S., Lundin W., Evtikhiev V., Tsatsulnikov A.
Том 53, № 8 (2019) Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation
Blokhin S., Kulagina M., Guseva Y., Mintairov S., Kalyuzhnyy N., Mozharov A., Zubov F., Maximov M., Zhukov A., Moiseev E., Kryzhanovskaya N.
Том 53, № 4 (2019) Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing
Petrov A., Sitnikov S., Kosolobov S., Latyshev A.
Том 53, № 9 (2019) Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature
Uaman Svetikova T., Ikonnikov A., Rumyantsev V., Kozlov D., Chernichkin V., Galeeva A., Varavin V., Mikhailov N., Dvoretskii S., Morozov S., Gavrilenko V.
Том 53, № 16 (2019) Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation
Nastovjak A., Usenkova A., Shwartz N., Neizvestny I.
Том 50, № 1 (2016) Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings
Kozlovsky V., Krivobok V., Kuznetsov P., Nikolaev S., Onistchenko E., Pruchkina A., Timiryazev A., Chentsov S.
Том 53, № 16 (2019) Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy
Agekyan V., Chukeev M., Karczewski G., Serov A., Filosofov N., Reznitsky A.
Том 53, № 12 (2019) Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors
Krivobok V., Litvinov D., Nikolaev S., Onishchenko E., Pashkeev D., Chernopittsky M., Grigor’eva L.
Том 51, № 5 (2017) Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers
Senokosov E., Chukita V., Khamidullin R., Cheban V., Odin I., Chukichev M.
Том 51, № 7 (2017) Experimental and theoretical study of the thermoelectric properties of copper selenide
Bulat L., Osvenskii V., Ivanov A., Sorokin A., Pshenay-Severin D., Bublik V., Tabachkova N., Panchenko V., Lavrentev M.
Том 50, № 6 (2016) Experimental determination of the derivative of the current–voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis
Kuzmichev N., Vasyutin M., Shilkin D.
Том 52, № 4 (2018) Experimental Observation of Dyakonov Plasmons in the Mid-Infrared
Takayama O., Dmitriev P., Shkondin E., Yermakov O., Panah M., Golenitskii K., Jensen F., Bogdanov A., Lavrinenko A.
Том 51, № 9 (2017) Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties
Seredin P., Goloshchapov D., Lenshin A., Lukin A., Khudyakov Y., Arsentyev I., Prutskij T.
Том 51, № 8 (2017) Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties
Seredin P., Lenshin A., Khudyakov Y., Arsentyev I., Kaliuzhny N., Mintairov S., Nikolaev D., Prutskij T.
Том 52, № 7 (2018) Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells
Kaliteevski M., Nikitina E., Gubaidullin A., Ivanov K., Egorov A., Pozina G.
Том 52, № 14 (2018) Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix
Pozina G., Kaliteevski M., Nikitina E., Gubaidullin A., Morozov K., Girshova E., Ivanov K., Egorov A.
Том 52, № 11 (2018) Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region
Morozov K., Ivanov K., Selenin N., Mikhrin S., de Sa Pereira D., Menelaou C., Monkman A., Kaliteevski M.
Том 52, № 14 (2018) Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices
Tarasov A., Ovchinnikov S., Varnakov S., Yakovlev I., Smolyarova T., Baron F., Rautskii M., Bondarev I., Lukyanenko A., Volkov N.
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