Том 50, № 12 (2016)

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 10¹⁷ to ~10²⁰ at cm^–3 and of δ doping to the surface concentration (0.3–5) × 10¹³ at cm^–3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.

Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically and experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors.

The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.

In planar GaAs microcavities in a magnetic field up to 5 T perpendicular to the structure growth plane, under conditions of resonant pulsed pumping to a point close to the inflection point of the lower dispersion curve, Zeeman splitting of the spin sublevels of the polariton condensate is observed. This is accompanied by a significant change in the degree of circular polarization and the second-order correlator g²(0). It is found that the correlator is different for the spin sublevels of the polariton condensate, split in a magnetic field. In particular, correlator measurements indicate different condensation thresholds for the spin sublevels. The correlator values initially differing in terms of the absence of a field increase, reach a maximum, and then decrease and become equal for different polarizations in a field of 5 T.

It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.

The parameters of multilayer Cd_xHg_1–xTe heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p⁺–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 10¹⁵ cm^–3. The temperature dependences of the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n⁺–p-type diodes.

A model of the Pb_1–xSn_xTe:In compound, based on concepts of the theory of disordered systems is considered. The temperature dependences of the Fermi-level position and carrier concentration are calculated depending on the indium doping level and are compared with experimental data. The transient current–voltage characteristics are calculated in the mode of injection from the contact and current limitation by space charge at various voltage-variation rates. The data obtained are compared with the experiments. It is demonstrated that the shape of the characteristics is controlled by the parameters of electron capture at localized states. Photocurrent relaxation in a magnetic field is studied, and the mechanism of such relaxation is discussed under the assumption of the magnetic freezing of carriers.

The photoluminescence spectra of individual quantum dots incorporated into a quantum wire are studied. From the behavior of the spectra in a magnetic field, it is possible to estimate the exciton binding energy in a quantum dot incorporated into a quantum wire. It is found that the exciton photoluminescence signal emitted from a quantum dot along the direction of the nanowire axis is linearly polarized. At the same time, the photoluminescence signal propagating in the direction orthogonal to the nanowire axis is practically unpolarized. The experimentally observed effect is attributed to the nonaxial arrangement of the dot in the wire under conditions of a huge increase in the exciton binding energy due to the effect of the image potential on the exciton.

The electroluminescence of structures with self-assembled Ge(Si) nanoislands grown on relaxed SiGe/Si(001) buffer layers and confined between strained Si layers is studied for the first time. The electroluminescence signal from the structures is observed in the wavelength range from 1.6 to 2.0 μm, i.e., at longer wavelengths compared to those in the case of structures with Ge(Si) islands formed on Si (001) substrates. This give grounds to consider the structures with Ge(Si) islands confined between strained Si layers as candidates for the production of Si-based sources of emission at wavelengths of >1.55 μm.

Diffusion injection lasers based on Pb_{1 – x}Sn_xSe alloy, emitting in a wide spectral range of 10–46.5 μm depending on the composition and temperatures are fabricated. A technology for growing high-quality single crystals from the vapor phase under conditions of free growth is developed. The dependences of the total emission intensity on the pump current and the emission spectra of injection lasers based on Pb_{1 – x}Sn_xSe are studied. In these samples, lasing of long-wavelength radiation to a record wavelength of 46.5 μm is achieved.

We analyze the electron transport through the thin base of a GaAs heterojunction bipolar transistor with regard to fluctuations in the spatial distribution of defect clusters induced by irradiation with a fissionspectrum fast neutron flux. We theoretically demonstrate that the homogeneous filling of the working region with radiation-induced defect clusters causes minimum degradation of the dc gain of the heterojunction bipolar transistor.

The processes associated with the transfer of excitonic excitations between tunnel-uncoupled quantum wells (QW) and the influence of the local electric field were investigated in AlGaAs/GaAs heterostructures by the method of photoluminescence excitation (PLE) spectroscopy at low (4.2 K) temperature. The variation in the intensity of photoluminescence (PL) from the wider QW under resonant excitation of excitonic transition in the adjacent narrow QW has been observed. The difference in the PL maximum position and intensity of the wider QW under resonance excitation of the narrow one is explained by the influence of quantum-confined Stark effect on the process of exciton recombination.