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Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.I.
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy
Pchelyakov O.P., Mikhlin Y.L., Parshin A.S., Kushchenkov S.A.
Study of the Formation Process of Memristor Structures Based on Copper Sulfide
Belov A.N., Golishnikov A.A., Mastinin A.M., Perevalov A.A., Shevyakov V.I.
Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid
Alekseev P.S.
Formation of a Graphene-Like SiN Layer on the Surface Si(111)
Mansurov V.G., Galitsyn Y.G., Malin T.V., Teys S.A., Fedosenko E.V., Kozhukhov A.S., Zhuravlev K.S., Cora I., Pécz B.
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well
Hasanov K.A., Huseynov J.I., Dadashova V.V., Aliyev F.F.
Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation
Grishina Y.S., Borgardt N.I., Volkov R.L., Gromov D.G., Savitskiy A.I.
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors
Shobolova T.A., Korotkov A.V., Petryakova E.V., Lipatnikov A.V., Puzanov A.S., Obolensky S.V., Kozlov V.A.
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells
Dobretsova A.A., Kvon Z.D., Braginskii L.S., Entin M.V., Mikhailov N.N.
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC
Kyuregyan A.S.
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures
Goray L.I., Pirogov E.V., Nikitina E.V., Ubyivovk E.V., Gerchikov L.G., Ipatov A.N., Dashkov A.S., Sobolev M.S., Ilkiv I.V., Bouravlev A.D.
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A.A., Pavlov D.A., Shengurov V.G., Denisov S.A., Chalkov V.Y., Baidus N.V., Rykov A.V., Kryukov R.N.
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M.V., Borgardt N.I., Bugaev A.S., Volkov R.L., Seibt M.
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Lobanov D.N., Novikov A.V., Andreev B.A., Bushuykin P.A., Yunin P.A., Skorohodov E.V., Krasilnikova L.V.
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
Eliseyev I.A., Davydov V.Y., Smirnov A.N., Nestoklon M.O., Dementev P.A., Lebedev S.P., Lebedev A.A., Zubov A.V., Mathew S., Pezoldt J., Bokai K.A., Usachov D.Y.
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices
Obolenskaya E.S., Ivanov A.S., Pavelyev D.G., Kozlov V.A., Vasilev A.P.
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
Egorov A.Y., Karachinsky L.Y., Novikov I.I., Babichev A.V., Nevedomskiy V.N., Bugrov V.E.
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin
Ryabtsev S.V., Chuvenkova O.A., Kannykin S.V., Popov A.E., Ryabtseva N.S., Voischev S.S., Turishchev S.Y., Domashevskaya E.P.
Microwave Absorption by Axisymmetric Plasmon Mode in 2D Electron Disk
Zagorodnev I.V., Rodionov D.A., Zabolotnykh A.A., Volkov V.A.
Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field
Kamilov I.K., Stepurenko A.A., Gummetov A.E.
On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field
Rasulov V.R., Rasulov R.Y.
Plasmons in Infinite 2D Electron System Screened by the Disk-Shaped Metallic Gate
Zabolotnykh A.A., Volkov V.A.
Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications
Ajayan J., Ravichandran T., Mohankumar P., Prajoon P., Pravin J.C., Nirmal D.
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon
Chubenko E.B., Redko S.V., Sherstnyov A.I., Petrovich V.A., Kotov D.A., Bondarenko V.P.
Modification of Carbon-Nanotube Wettability by Ion Irradiation
Morkovkin A.I., Vorobyeva E.A., Evseev A.P., Balakshin Y.V., Shemukhin A.A.
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