| Issue |
Title |
File |
| Vol 50, No 12 (2016) |
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection |
(Eng)
|
|
Fedorov G.E., Stepanova T.S., Gazaliev A.S., Gaiduchenko I.A., Kaurova N.S., Voronov B.M., Goltzman G.N.
|
| Vol 50, No 12 (2016) |
Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation |
(Eng)
|
|
Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
|
| Vol 50, No 12 (2016) |
On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells |
(Eng)
|
|
Yablonsky A.N., Zhukavin R.K., Bekin N.A., Novikov A.V., Yurasov D.V., Shaleev M.V.
|
| Vol 50, No 12 (2016) |
Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm |
(Eng)
|
|
Akimov A.N., Klimov A.E., Morozov S.V., Suprun S.P., Epov V.S., Ikonnikov A.V., Fadeev M.A., Rumyantsev V.V.
|
| Vol 50, No 12 (2016) |
Polariton condensate coherence in planar microcavities in a magnetic field |
(Eng)
|
|
Chernenko A.V., Rahimi-lman A., Fischer J., Amthor M., Schneider C., Reitzenstein S., Forchel A., Hoefling S.
|
| Vol 50, No 12 (2016) |
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells |
(Eng)
|
|
Aleshkin V.Y., Gavrilenko L.V., Gaponova D.M., Krasil’nik Z.F., Kryzhkov D.I.
|
| Vol 50, No 12 (2016) |
Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface |
(Eng)
|
|
Koryazhkina M.N., Tikhov S.V., Gorshkov O.N., Kasatkin A.P., Antonov I.N.
|
| Vol 50, No 12 (2016) |
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
(Eng)
|
|
Shtrom I.V., Bouravleuv A.D., Samsonenko Y.B., Khrebtov A.I., Soshnikov I.P., Reznik R.R., Cirlin G.E., Dhaka V., Perros A., Lipsanen H.
|
| Vol 50, No 12 (2016) |
Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates |
(Eng)
|
|
Yunin P.A., Drozdov Y.N., Chernov V.V., Isaev V.A., Bogdanov S.A., Muchnikov A.B.
|
| Vol 50, No 12 (2016) |
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures |
(Eng)
|
|
Varavin V.S., Vasilyev V.V., Guzev A.A., Dvoretsky S.A., Kovchavtsev A.P., Marin D.V., Sabinina I.V., Sidorov Y.G., Sidorov G.Y., Tsarenko A.V., Yakushev M.V.
|
| Vol 50, No 12 (2016) |
Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures |
(Eng)
|
|
Novikov A.V., Shaleev M.V., Yurasov D.V., Yunin P.A.
|
| Vol 50, No 12 (2016) |
Resonant features of the terahertz generation in semiconductor nanowires |
(Eng)
|
|
Trukhin V.N., Bouravleuv A.D., Mustafin I.A., Cirlin G.E., Kuritsyn D.I., Rumyantsev V.V., Morosov S.V., Kakko J.P., Huhtio T., Lipsanen H.
|
| Vol 50, No 12 (2016) |
PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity |
(Eng)
|
|
Ishchenko D.V., Klimov A.E., Shumsky V.N., Epov V.S.
|
| Vol 50, No 12 (2016) |
On a new method of heterojunction formation in III–V nanowires |
(Eng)
|
|
Sibirev N.V., Koryakin A.A., Dubrovskii V.G.
|
| Vol 50, No 12 (2016) |
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures |
(Eng)
|
|
Gudina S.V., Arapov Y.G., Saveliev A.P., Neverov V.N., Podgornykh S.M., Shelushinina N.G., Yakunin M.V., Vasil’evskii I.S., Vinichenko A.N.
|
| Vol 50, No 12 (2016) |
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron |
(Eng)
|
|
Surovegina E.A., Demidov E.V., Drozdov M.N., Murel A.V., Khrykin O.I., Shashkin V.I., Lobaev M.A., Gorbachev A.M., Viharev A.L., Bogdanov S.A., Isaev V.A., Muchnikov A.B., Chernov V.V., Radishchev D.B., Batler D.E.
|
| Vol 50, No 12 (2016) |
Polarization of the photoluminescence of quantum dots incorporated into quantum wires |
(Eng)
|
|
Platonov A.V., Kochereshko V.P., Kats V.N., Cirlin G.E., Bouravleuv A.D., Avdoshina D.V., Delga A., Besombes L., Mariette H.
|
| Vol 50, No 12 (2016) |
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors |
(Eng)
|
|
Tarasova E.A., Obolenskaya E.S., Hananova A.V., Obolensky S.V., Zemliakov V.E., Egorkin V.I., Nezhenzev A.V., Saharov A.V., Zazul’nokov A.F., Lundin V.V., Zavarin E.E., Medvedev G.V.
|
| Vol 50, No 12 (2016) |
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells |
(Eng)
|
|
Rumyantsev V.V., Fadeev M.A., Morozov S.V., Dubinov A.A., Kudryavtsev K.E., Kadykov A.M., Tuzov I.V., Dvoretskii S.A., Mikhailov N.N., Gavrilenko V.I., Teppe F.
|
| Vol 50, No 12 (2016) |
Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account |
(Eng)
|
|
Obolenskaya E.S., Tarasova E.A., Churin A.Y., Obolensky S.V., Kozlov V.A.
|
| Vol 50, No 12 (2016) |
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers |
(Eng)
|
|
Baidakova N.A., Novikov A.V., Shaleev M.V., Yurasov D.V., Morozova E.E., Shengurov D.V., Krasilnik Z.F.
|
| Vol 50, No 12 (2016) |
Strained multilayer structures with pseudomorphic GeSiSn layers |
(Eng)
|
|
Timofeev V.A., Nikiforov A.I., Tuktamyshev A.R., Yesin M.Y., Mashanov V.I., Gutakovskii A.K., Baidakova N.A.
|
| Vol 50, No 12 (2016) |
Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells |
(Eng)
|
|
Fadeev M.A., Varavin V.S., Mikhailov N.N., Dvoretsky S.A., Gavrilenko V.I., Teppe F., Kozlov D.V., Rumyantsev V.V., Morozov S.V., Kadykov A.M.
|
| Vol 50, No 12 (2016) |
Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer |
(Eng)
|
|
Tikhov S.V., Gorshkov O.N., Koryazhkina M.N., Kasatkin A.P., Antonov I.N., Vihrova O.V., Morozov A.I.
|
| Vol 50, No 12 (2016) |
Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm |
(Eng)
|
|
Maremyanin K.V., Rumyantsev V.V., Ikonnikov A.V., Bovkun L.S., Chizhevskii E.G., Zasavitskii I.I., Gavrilenko V.I.
|
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