| Шығарылым |
Атауы |
Файл |
| Том 50, № 12 (2016) |
Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures |
(Eng)
|
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Novikov A., Shaleev M., Yurasov D., Yunin P.
|
| Том 50, № 12 (2016) |
Resonant features of the terahertz generation in semiconductor nanowires |
(Eng)
|
|
Trukhin V., Bouravleuv A., Mustafin I., Cirlin G., Kuritsyn D., Rumyantsev V., Morosov S., Kakko J., Huhtio T., Lipsanen H.
|
| Том 50, № 12 (2016) |
PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity |
(Eng)
|
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Ishchenko D., Klimov A., Shumsky V., Epov V.
|
| Том 50, № 12 (2016) |
On a new method of heterojunction formation in III–V nanowires |
(Eng)
|
|
Sibirev N., Koryakin A., Dubrovskii V.
|
| Том 50, № 12 (2016) |
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures |
(Eng)
|
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Gudina S., Arapov Y., Saveliev A., Neverov V., Podgornykh S., Shelushinina N., Yakunin M., Vasil’evskii I., Vinichenko A.
|
| Том 50, № 12 (2016) |
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron |
(Eng)
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Surovegina E., Demidov E., Drozdov M., Murel A., Khrykin O., Shashkin V., Lobaev M., Gorbachev A., Viharev A., Bogdanov S., Isaev V., Muchnikov A., Chernov V., Radishchev D., Batler D.
|
| Том 50, № 12 (2016) |
Polarization of the photoluminescence of quantum dots incorporated into quantum wires |
(Eng)
|
|
Platonov A., Kochereshko V., Kats V., Cirlin G., Bouravleuv A., Avdoshina D., Delga A., Besombes L., Mariette H.
|
| Том 50, № 12 (2016) |
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors |
(Eng)
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Tarasova E., Obolenskaya E., Hananova A., Obolensky S., Zemliakov V., Egorkin V., Nezhenzev A., Saharov A., Zazul’nokov A., Lundin V., Zavarin E., Medvedev G.
|
| Том 50, № 12 (2016) |
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells |
(Eng)
|
|
Rumyantsev V., Fadeev M., Morozov S., Dubinov A., Kudryavtsev K., Kadykov A., Tuzov I., Dvoretskii S., Mikhailov N., Gavrilenko V., Teppe F.
|
| Том 50, № 12 (2016) |
Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account |
(Eng)
|
|
Obolenskaya E., Tarasova E., Churin A., Obolensky S., Kozlov V.
|
| Том 50, № 12 (2016) |
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers |
(Eng)
|
|
Baidakova N., Novikov A., Shaleev M., Yurasov D., Morozova E., Shengurov D., Krasilnik Z.
|
| Том 50, № 12 (2016) |
Strained multilayer structures with pseudomorphic GeSiSn layers |
(Eng)
|
|
Timofeev V., Nikiforov A., Tuktamyshev A., Yesin M., Mashanov V., Gutakovskii A., Baidakova N.
|
| Том 50, № 12 (2016) |
Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells |
(Eng)
|
|
Fadeev M., Varavin V., Mikhailov N., Dvoretsky S., Gavrilenko V., Teppe F., Kozlov D., Rumyantsev V., Morozov S., Kadykov A.
|
| Том 50, № 12 (2016) |
Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer |
(Eng)
|
|
Tikhov S., Gorshkov O., Koryazhkina M., Kasatkin A., Antonov I., Vihrova O., Morozov A.
|
| Том 50, № 12 (2016) |
Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm |
(Eng)
|
|
Maremyanin K., Rumyantsev V., Ikonnikov A., Bovkun L., Chizhevskii E., Zasavitskii I., Gavrilenko V.
|
| Том 50, № 12 (2016) |
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs |
(Eng)
|
|
Ushanov V., Chaldyshev V., Preobrazhenskii V., Putyato M., Semyagin B.
|
| Том 50, № 12 (2016) |
Polarization of the induced THz emission of donors in silicon |
(Eng)
|
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Kovalevsky K., Zhukavin R., Tsyplenkov V., Pavlov S., Hübers H., Abrosimov N., Shastin V.
|
| Том 50, № 12 (2016) |
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection |
(Eng)
|
|
Fedorov G., Stepanova T., Gazaliev A., Gaiduchenko I., Kaurova N., Voronov B., Goltzman G.
|
| Том 50, № 12 (2016) |
Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation |
(Eng)
|
|
Puzanov A., Obolenskiy S., Kozlov V.
|
| Том 50, № 12 (2016) |
On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells |
(Eng)
|
|
Yablonsky A., Zhukavin R., Bekin N., Novikov A., Yurasov D., Shaleev M.
|
| Том 50, № 12 (2016) |
Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm |
(Eng)
|
|
Akimov A., Klimov A., Morozov S., Suprun S., Epov V., Ikonnikov A., Fadeev M., Rumyantsev V.
|
| Том 50, № 12 (2016) |
Polariton condensate coherence in planar microcavities in a magnetic field |
(Eng)
|
|
Chernenko A., Rahimi-lman A., Fischer J., Amthor M., Schneider C., Reitzenstein S., Forchel A., Hoefling S.
|
| Том 50, № 12 (2016) |
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells |
(Eng)
|
|
Aleshkin V., Gavrilenko L., Gaponova D., Krasil’nik Z., Kryzhkov D.
|
| Том 50, № 12 (2016) |
Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface |
(Eng)
|
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Koryazhkina M., Tikhov S., Gorshkov O., Kasatkin A., Antonov I.
|
| Том 50, № 12 (2016) |
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
(Eng)
|
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Shtrom I., Bouravleuv A., Samsonenko Y., Khrebtov A., Soshnikov I., Reznik R., Cirlin G., Dhaka V., Perros A., Lipsanen H.
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