| Issue |
Title |
File |
| Vol 48, No 4 (2019) |
Synthesis of a Concurrent Error Detection Circuit Based on the Spectral R-Code with the Partitioning of Outputs into Groups |
(Eng)
|
|
Stempkovskii A.L., Tel’pukhov D.V., Zhukova T.D., Demeneva A.I., Nadolenko V.V., Gurov S.I.
|
| Vol 48, No 4 (2019) |
Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs |
(Eng)
|
|
Chumakov A.I., Bobrovsky D.V., Pechenkin A.A., Savchenkov D.V., Sorokoumov G.S., Shvetsov-Shilovskiy I.I.
|
| Vol 48, No 4 (2019) |
Memristor Based Pulse Train Generator |
(Eng)
|
|
Rakitin V.V., Rusakov S.G.
|
| Vol 48, No 4 (2019) |
Microconsuming 8–12 GHz GaN Power Amplifiers |
(Eng)
|
|
Gamkrelidze S.A., Gnatyuk D.L., Zuev A.V., Maitama M.V., Mal’tsev P.P., Mikhalev A.O., Fedorov Y.V.
|
| Vol 48, No 4 (2019) |
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology |
(Eng)
|
|
Boruzdina A.B., Gerasimov Y.M., Grigor’ev N.G., Kobylyatskii A.V., Ulanova A.V., Shvetsov-Shilovskii I.I.
|
| Vol 48, No 3 (2019) |
Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language |
(Eng)
|
|
Teplov G.S., Gornev E.S.
|
| Vol 48, No 3 (2019) |
Logical C-Element on STG DICE Trigger for Asynchronous Digital Devices Resistant to Single Nuclear Particles |
(Eng)
|
|
Katunin Y.V., Stenin V.Y.
|
| Vol 48, No 3 (2019) |
Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon |
(Eng)
|
|
Rudenko M.K., Myakon’kikh A.V., Lukichev V.F.
|
| Vol 48, No 3 (2019) |
Methods and Algorithms for the Logical-Topological Design of Microelectronic Circuits at the Valve and Inter-Valve Levels for Promising Technologies with a Vertical Transistor Gate |
(Eng)
|
|
Ivanova G.A., Ryzhova D.I., Gavrilov S.V., Vasilyev N.O., Stempkovskii A.L.
|
| Vol 48, No 3 (2019) |
Layout Synthesis Design Flow for Special-Purpose Reconfigurable Systems-on-a-Chip |
(Eng)
|
|
Gavrilov S.V., Zheleznikov D.A., Zapletina M.A., Khvatov V.M., Chochaev R.Z., Enns V.I.
|
| Vol 48, No 3 (2019) |
Extracting a Logic Gate Network from a Transistor-Level CMOS Circuit |
(Eng)
|
|
Cheremisinov D.I., Cheremisinova L.D.
|
| Vol 48, No 3 (2019) |
Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions |
(Eng)
|
|
Brinkevich D.I., Kharchenko A.A., Prosolovich V.S., Odzhaev V.B., Brinkevich S.D., Yankovskii Y.N.
|
| Vol 48, No 2 (2019) |
Effect of the Built-in Surface Potential on the I–V Characteristics of Silicon MIS Structures |
(Eng)
|
|
Yafarov R.K.
|
| Vol 48, No 2 (2019) |
Influence of Pulsed Laser Deposition Modes on Properties of Nanocrystalline LiNbO3 Films |
(Eng)
|
|
Vakulov Z.E., Varzarev Y.N., Gusev E.Y., Skrylev A.V., Panich A.E., Miakonkikh A.V., Klemente I.E., Rudenko K.V., Konoplev B.G., Ageev O.A.
|
| Vol 48, No 2 (2019) |
Nanoscaled Profiling of Silicon Surface via Local Anodic Oxidation |
(Eng)
|
|
Polyakova V.V., Kots I.N., Smirnov V.A., Ageev O.A.
|
| Vol 48, No 2 (2019) |
Studying the Regimes of Silicon Surface Profiling by Focused Ion Beams |
(Eng)
|
|
Kots I.N., Kolomiitsev A.S., Lisitsyn S.A., Polyakova V.V., Klimin V.S., Ageev O.A.
|
| Vol 48, No 2 (2019) |
Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors |
(Eng)
|
|
Ezhovskii Y.K.
|
| Vol 48, No 2 (2019) |
Effect of the Fermi Surface Anisotropy on the Electrical Conductivity of a Thin Inhomogeneous Metal Wire |
(Eng)
|
|
Kuznetsova I.A., Romanov D.N., Yushkanov A.A.
|
| Vol 48, No 2 (2019) |
Features of the Kinetics of Bulk and Heterogeneous Processes in CHF3 + Ar and C4F8 + Ar Plasma Mixtures |
(Eng)
|
|
Murin D.B., Efremov A.M., Kwon K.
|
| Vol 48, No 2 (2019) |
Studying the Thermodynamic Properties of Composite Magnetic Material Based on Anodic Alumina |
(Eng)
|
|
Vorobjova A.I., Shimanovich D.L., Sycheva O.A., Ezovitova T.I., Tishkevich D.I., Trykhanov A.V.
|
| Vol 48, No 2 (2019) |
Fabrication and Electrical Characteristics of Asymmetric Rings Made of HTS YBCO Films Obtained by Pulsed Laser Deposition |
(Eng)
|
|
Il’in A.I., Ivanov A.A., Trofimov O.V., Firsov A.A., Nikulov A.V., Zotov A.V.
|
| Vol 48, No 1 (2019) |
Atomic Layer Deposition of Y2O3 Using Tris(butylcyclopentadienyl)yttrium and Water |
(Eng)
|
|
Abdulagatov A.I., Amashaev R.R., Ashurbekova K.N., Ramazanov S.M., Palchaev D.K., Maksumova A.M., Rabadanov M.K., Abdulagatov I.M.
|
| Vol 48, No 1 (2019) |
Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching |
(Eng)
|
|
Derevyashkin S.V., Soboleva E.A., Shelkovnikov V.V., Malyshev A.I., Korolkov V.P.
|
| Vol 48, No 1 (2019) |
The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs |
(Eng)
|
|
Enisherlova K.L., Kolkovskii Y.V., Bobrova E.A., Temper E.M., Kapilin S.A.
|
| Vol 48, No 1 (2019) |
Identification and Excitation Mechanisms of the Lines and Bands of Boron-Containing Components in the Optical Emission Spectra of Low-Temperature BF3/Ar Plasmas |
(Eng)
|
|
Kudrya V.P.
|
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