| Шығарылым |
Атауы |
Файл |
| Том 48, № 4 (2019) |
Synthesis of a Concurrent Error Detection Circuit Based on the Spectral R-Code with the Partitioning of Outputs into Groups |
(Eng)
|
|
Stempkovskii A., Tel’pukhov D., Zhukova T., Demeneva A., Nadolenko V., Gurov S.
|
| Том 48, № 4 (2019) |
Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs |
(Eng)
|
|
Chumakov A., Bobrovsky D., Pechenkin A., Savchenkov D., Sorokoumov G., Shvetsov-Shilovskiy I.
|
| Том 48, № 4 (2019) |
Memristor Based Pulse Train Generator |
(Eng)
|
|
Rakitin V., Rusakov S.
|
| Том 48, № 4 (2019) |
Microconsuming 8–12 GHz GaN Power Amplifiers |
(Eng)
|
|
Gamkrelidze S., Gnatyuk D., Zuev A., Maitama M., Mal’tsev P., Mikhalev A., Fedorov Y.
|
| Том 48, № 4 (2019) |
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology |
(Eng)
|
|
Boruzdina A., Gerasimov Y., Grigor’ev N., Kobylyatskii A., Ulanova A., Shvetsov-Shilovskii I.
|
| Том 48, № 3 (2019) |
Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language |
(Eng)
|
|
Teplov G., Gornev E.
|
| Том 48, № 3 (2019) |
Logical C-Element on STG DICE Trigger for Asynchronous Digital Devices Resistant to Single Nuclear Particles |
(Eng)
|
|
Katunin Y., Stenin V.
|
| Том 48, № 3 (2019) |
Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon |
(Eng)
|
|
Rudenko M., Myakon’kikh A., Lukichev V.
|
| Том 48, № 3 (2019) |
Methods and Algorithms for the Logical-Topological Design of Microelectronic Circuits at the Valve and Inter-Valve Levels for Promising Technologies with a Vertical Transistor Gate |
(Eng)
|
|
Ivanova G., Ryzhova D., Gavrilov S., Vasilyev N., Stempkovskii A.
|
| Том 48, № 3 (2019) |
Layout Synthesis Design Flow for Special-Purpose Reconfigurable Systems-on-a-Chip |
(Eng)
|
|
Gavrilov S., Zheleznikov D., Zapletina M., Khvatov V., Chochaev R., Enns V.
|
| Том 48, № 3 (2019) |
Extracting a Logic Gate Network from a Transistor-Level CMOS Circuit |
(Eng)
|
|
Cheremisinov D., Cheremisinova L.
|
| Том 48, № 3 (2019) |
Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions |
(Eng)
|
|
Brinkevich D., Kharchenko A., Prosolovich V., Odzhaev V., Brinkevich S., Yankovskii Y.
|
| Том 48, № 2 (2019) |
Effect of the Built-in Surface Potential on the I–V Characteristics of Silicon MIS Structures |
(Eng)
|
|
Yafarov R.
|
| Том 48, № 2 (2019) |
Influence of Pulsed Laser Deposition Modes on Properties of Nanocrystalline LiNbO3 Films |
(Eng)
|
|
Vakulov Z., Varzarev Y., Gusev E., Skrylev A., Panich A., Miakonkikh A., Klemente I., Rudenko K., Konoplev B., Ageev O.
|
| Том 48, № 2 (2019) |
Nanoscaled Profiling of Silicon Surface via Local Anodic Oxidation |
(Eng)
|
|
Polyakova V., Kots I., Smirnov V., Ageev O.
|
| Том 48, № 2 (2019) |
Studying the Regimes of Silicon Surface Profiling by Focused Ion Beams |
(Eng)
|
|
Kots I., Kolomiitsev A., Lisitsyn S., Polyakova V., Klimin V., Ageev O.
|
| Том 48, № 2 (2019) |
Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors |
(Eng)
|
|
Ezhovskii Y.
|
| Том 48, № 2 (2019) |
Effect of the Fermi Surface Anisotropy on the Electrical Conductivity of a Thin Inhomogeneous Metal Wire |
(Eng)
|
|
Kuznetsova I., Romanov D., Yushkanov A.
|
| Том 48, № 2 (2019) |
Features of the Kinetics of Bulk and Heterogeneous Processes in CHF3 + Ar and C4F8 + Ar Plasma Mixtures |
(Eng)
|
|
Murin D., Efremov A., Kwon K.
|
| Том 48, № 2 (2019) |
Studying the Thermodynamic Properties of Composite Magnetic Material Based on Anodic Alumina |
(Eng)
|
|
Vorobjova A., Shimanovich D., Sycheva O., Ezovitova T., Tishkevich D., Trykhanov A.
|
| Том 48, № 2 (2019) |
Fabrication and Electrical Characteristics of Asymmetric Rings Made of HTS YBCO Films Obtained by Pulsed Laser Deposition |
(Eng)
|
|
Il’in A., Ivanov A., Trofimov O., Firsov A., Nikulov A., Zotov A.
|
| Том 48, № 1 (2019) |
Atomic Layer Deposition of Y2O3 Using Tris(butylcyclopentadienyl)yttrium and Water |
(Eng)
|
|
Abdulagatov A., Amashaev R., Ashurbekova K., Ramazanov S., Palchaev D., Maksumova A., Rabadanov M., Abdulagatov I.
|
| Том 48, № 1 (2019) |
Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching |
(Eng)
|
|
Derevyashkin S., Soboleva E., Shelkovnikov V., Malyshev A., Korolkov V.
|
| Том 48, № 1 (2019) |
The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs |
(Eng)
|
|
Enisherlova K., Kolkovskii Y., Bobrova E., Temper E., Kapilin S.
|
| Том 48, № 1 (2019) |
Identification and Excitation Mechanisms of the Lines and Bands of Boron-Containing Components in the Optical Emission Spectra of Low-Temperature BF3/Ar Plasmas |
(Eng)
|
|
Kudrya V.
|
| Нәтижелер 328 - 51/75 |
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