Выпуск |
Название |
Файл |
Том 51, № 12 (2017) |
Patterning approach for detecting defect in device manufacturing |
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Vikram A., Agarwal V.
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Том 52, № 15 (2018) |
Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests |
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Sergeev V., Frolov I., Shirokov A., Radaev O.
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Том 50, № 2 (2016) |
Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm |
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Pashkeev D., Selivanov Y., Chizhevskii E., Zasavitskiy I.
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Том 50, № 12 (2016) |
PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity |
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Ishchenko D., Klimov A., Shumsky V., Epov V.
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Том 51, № 1 (2017) |
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
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Khairnar A., Patil V., Agrawal K., Salunke R., Mahajan A.
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Том 51, № 11 (2017) |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
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Baidus N., Aleshkin V., Dubinov A., Kudryavtsev K., Nekorkin S., Novikov A., Pavlov D., Rykov A., Sushkov A., Shaleev M., Yunin P., Yurasov D., Yablonskiy A., Krasilnik Z.
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Том 52, № 1 (2018) |
Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure |
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Zhukov N., Kabanov V., Mihaylov A., Mosiyash D., Pereverzev Y., Hazanov A., Shishkin M.
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Том 51, № 12 (2017) |
Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts |
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Liaw Y., Liao W., Wang M., Chen C., Li D., Gu H., Zou X.
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Том 51, № 3 (2017) |
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field |
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Balagula R., Vinnichenko M., Makhov I., Sofronov A., Firsov D., Vorobjev L.
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Том 52, № 11 (2018) |
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon |
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Cirlin G., Reznik R., Samsonenko Y., Khrebtov A., Kotlyar K., Ilkiv I., Soshnikov I., Kirilenko D., Kryzhanovskaya N.
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Том 52, № 14 (2018) |
Photoacoustic Generation with Surface Noble Metal Nanostructures |
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Mikitchuk A., Kozadaev K.
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Том 53, № 16 (2019) |
Photoactive ZnO–Al2O3 Transparent Coatings and Nanocomposites Prepared by a Simple Polymer-Salt Synthesis |
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Maslennikov S., Evstropiev S., Gridchin V., Soshnikov I.
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Том 53, № 1 (2019) |
Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence |
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Li G., Astrova E., Lihachev A.
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Том 52, № 4 (2018) |
Photocharging Dynamics in Colloidal CdS Quantum Dots Visualized by Electron Spin Coherence |
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Yakovlev D., Feng D., Pavlov V., Rodina A., Shornikova E., Mund J., Bayer M.
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Том 52, № 8 (2018) |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
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Mikhailova M., Andreev I., Konovalov G., Danilov L., Ivanov E., Kunitsyna E., Il’inskaya N., Levin R., Pushnyi B., Yakovlev Y.
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Том 50, № 1 (2016) |
Photodetectors based on CuInS2 |
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Vostretsova L., Gavrilov S., Bulyarsky S.
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Том 52, № 12 (2018) |
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates |
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Samartsev I., Nekorkin S., Zvonkov B., Aleshkin V., Dubinov A., Pashenkin I., Dikareva N., Chigineva A.
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Том 50, № 5 (2016) |
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure |
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Il’inskaya N., Karandashev S., Karpukhina N., Lavrov A., Matveev B., Remennyi M., Stus N., Usikova A.
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Том 51, № 5 (2017) |
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice |
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Grashchenko A., Feoktistov N., Osipov A., Kalinina E., Kukushkin S.
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Том 53, № 2 (2019) |
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers |
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Kukushkin S., Mizerov A., Grashchenko A., Osipov A., Nikitina E., Timoshnev S., Bouravlev A., Sobolev M.
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Том 52, № 7 (2018) |
Photoelectric Properties of ZnO Threadlike Crystals |
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Shkumbatjuk P.
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Том 53, № 1 (2019) |
Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi1 –xSbx)2Te3 Topological Insulators |
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Ryabova L., Khokhlov D., Galeeva A., Gomanko M., Tamm M., Yashina L., Danilov S.
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Том 50, № 3 (2016) |
Photoluminescence and Confinement of Excitons in Disordered Porous Films |
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Bondar N., Brodin M., Brodin A., Matveevskaya N.
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Том 53, № 14 (2019) |
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures |
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Goray L., Pirogov E., Nikitina E., Ubyivovk E., Gerchikov L., Ipatov A., Dashkov A., Sobolev M., Ilkiv I., Bouravlev A.
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Том 50, № 8 (2016) |
Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects |
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Aleksandrov I., Mansurov V., Zhuravlev K.
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