| Выпуск |
Название |
Файл |
| Том 51, № 2 (2017) |
Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes |
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Lenshin A., Seredin P., Kavetskaya I., Minakov D., Kashkarov V.
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| Том 51, № 6 (2017) |
Study of the distribution profile of iron ions implanted into silicon |
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Kozhemyako A., Balakshin Y., Shemukhin A., Chernysh V.
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| Том 50, № 10 (2016) |
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals |
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Podkopaev O., Shimanskiy A., Kopytkova S., Filatov R., Golubovskaya N.
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| Том 53, № 1 (2019) |
Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals |
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Gladilin A., Ilichev N., Kalinushkin V., Studenikin M., Uvarov O., Chapnin V., Tumorin V., Novikov G.
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| Том 52, № 10 (2018) |
Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films |
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Markov L., Pavluchenko A., Smirnova I., Pavlov S.
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| Том 50, № 3 (2016) |
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation |
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Tarasova E., Khananova A., Obolensky S., Zemlyakov V., Sveshnikov Y., Egorkin V., Ivanov V., Medvedev G., Smotrin D.
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| Том 53, № 15 (2019) |
Study of the Formation Process of Memristor Structures Based on Copper Sulfide |
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Belov A., Golishnikov A., Mastinin A., Perevalov A., Shevyakov V.
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| Том 50, № 8 (2016) |
Study of the impurity photoconductivity in p-InSb using epitaxial p+ contacts |
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Eminov S.
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| Том 51, № 11 (2017) |
Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures |
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Alexeev A., Mamaev V., Petrov S.
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| Том 51, № 1 (2017) |
Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds |
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Karavaev M., Kirilenko D., Ivanova E., Popova T., Sitnikova A., Sedova I., Zamoryanskaya M.
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| Том 50, № 5 (2016) |
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films |
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Avilov V., Ageev O., Konoplev B., Smirnov V., Solodovnik M., Tsukanova O.
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| Том 50, № 8 (2016) |
Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H |
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Abramov A., Andronikov D., Emtsev K., Kukin A., Semenov A., Terukova E., Titov A., Yakovlev S.
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| Том 53, № 14 (2019) |
Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures |
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Bondarev I., Rautskii M., Yakovlev I., Volochaev M., Lukyanenko A., Tarasov A., Volkov N.
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| Том 52, № 6 (2018) |
Study of the Properties of II–VI and III–V Semiconductor Quantum Dots |
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Mikhailov A., Kabanov V., Gorbachev I., Glukhovsky E.
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| Том 50, № 10 (2016) |
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |
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Veselov D., Shashkin I., Bobretsova Y., Bakhvalov K., Lutetskiy A., Kapitonov V., Pikhtin N., Slipchenko S., Sokolova Z., Tarasov I.
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| Том 52, № 9 (2018) |
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface |
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Smagina Z., Zinovyev V., Krivyakin G., Rodyakina E., Kuchinskaya P., Fomin B., Yablonskiy A., Stepikhova M., Novikov A., Dvurechenskii A.
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| Том 52, № 6 (2018) |
Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers |
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Pashchenko A., Lunin L., Chebotarev S., Lunina M.
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| Том 52, № 11 (2018) |
Study of the Structural and Morphological Properties of HPHT Diamond Substrates |
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Yunin P., Volkov P., Drozdov Y., Koliadin A., Korolev S., Radischev D., Surovegina E., Shashkin V.
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| Том 51, № 2 (2017) |
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates |
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Kryzhanovskaya N., Polubavkina Y., Nevedomskiy V., Nikitina E., Lazarenko A., Egorov A., Maximov M., Moiseev E., Zhukov A.
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| Том 51, № 13 (2017) |
Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy |
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Sokolov E., Fedotov S., Statsenko V., Timoshenkov S., Emelyanov A.
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| Том 50, № 13 (2016) |
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy |
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Lovygin M., Borgardt N., Bugaev A., Volkov R., Seibt M.
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| Том 52, № 1 (2018) |
Study of the Structure of Cadmium-Sulfide Nanowire Crystals Synthesized by Vacuum Evaporation and Condensation in a Quasi-Closed Volume |
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Belyaev A., Antipov V., Rubets V.
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| Том 50, № 11 (2016) |
Study of the structures of cleaved cross sections by Raman spectroscopy |
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Plankina S., Vikhrova O., Danilov Y., Zvonkov B., Konnova N., Nezhdanov A., Pashenkin I.
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| Том 50, № 2 (2016) |
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy |
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Dunaev A., Murin D., Pivovarenok S.
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| Том 51, № 5 (2017) |
Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode |
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Gusev A., Lyubutin S., Rukin S., Tsyranov S.
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| 1251 - 1275 из 1443 результатов |
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