| Issue |
Section |
Title |
File |
| Vol 50, No 3 (2016) |
Physics of Semiconductor Devices |
Microdisk Injection Lasers for the 1.27-μm Spectral Range |
|
| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range |
|
| Vol 50, No 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-confined structures with high absorbance |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency |
|
| Vol 50, No 13 (2016) |
Microelectronic Devices and Systems |
Methods for suppressing optical crosstalk between the cells of a silicon photomultiplier array |
|
| Vol 50, No 13 (2016) |
Microelectronic Devices and Systems |
The effect of the electron–phonon interaction on reverse currents of GaAs-based p–n junctions |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Specific features of waveguide recombination in laser structures with asymmetric barrier layers |
|
| Vol 51, No 2 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme |
|
| Vol 51, No 5 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD |
|
| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate |
|
| Vol 52, No 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates |
|
| Vol 52, No 2 (2018) |
Physics of Semiconductor Devices |
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers |
|
| Vol 52, No 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters |
|
| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
|
| Vol 52, No 12 (2018) |
Physics of Semiconductor Devices |
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
Diode Lasers with Near-Surface Active Region |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers |
|
| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
|
| Vol 53, No 11 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality |
|
| Vol 53, No 12 (2019) |
Physics of Semiconductor Devices |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
|
| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Spontaneous Emission in the Anti-Waveguiding VCSEL |
|
| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Whispering Gallery Modes and Spontaneous Emission in Compact VCSEL Structures |
|
| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Record Low Threshold Current Density in Quantum Dot Microdisk Laser |
|
