| Issue |
Title |
File |
| Vol 53, No 12 (2019) |
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy |
(Eng)
|
|
Levin R.V., Vlasov A.S., Smirnov A.N., Pushnyi B.V.
|
| Vol 53, No 11 (2019) |
Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? |
(Eng)
|
|
Titov A.I., Karabeshkin K.V., Karaseov P.A., Struchkov A.I.
|
| Vol 53, No 8 (2019) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
(Eng)
|
|
Tyschenko I.E., Voelskow M., Mikhaylov A.N., Tetelbaum D.I.
|
| Vol 53, No 8 (2019) |
Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon |
(Eng)
|
|
Balakshin Y.V., Kozhemiako A.V., Petrovic S., Erich M., Shemukhin A.A., Chernysh V.S.
|
| Vol 53, No 6 (2019) |
Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy |
(Eng)
|
|
Pechnikov A.I., Stepanov S.I., Chikiryaka A.V., Scheglov M.P., Odnobludov M.A., Nikolaev V.I.
|
| Vol 53, No 4 (2019) |
Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon |
(Eng)
|
|
Orlov V.I., Yarykin N.A., Yakimov E.B.
|
| Vol 53, No 4 (2019) |
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film |
(Eng)
|
|
Sobolev N.A., Sakharov V.I., Serenkov I.T., Bondarev A.D., Karabeshkin K.V., Fomin E.V., Kalyadin A.E., Mikoushkin V.M., Shek E.I., Sherstnev E.V.
|
| Vol 53, No 3 (2019) |
Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals |
(Eng)
|
|
Badalova Z.I., Abdullayev N.A., Azhdarov G.H., Aliguliyeva K.V., Gahramanov S.S., Nemov S.A., Mamedov N.T.
|
| Vol 53, No 3 (2019) |
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon |
(Eng)
|
|
Shuman V.B., Lodygin A.N., Portsel L.M., Yakovleva A.A., Abrosimov N.V., Astrov Y.A.
|
| Vol 52, No 13 (2018) |
McCurdy’s Effects in the Thermal Conductivity of Elastically Anisotropic Crystals in the Mode of Knudsen Phonon-Gas Flow |
(Eng)
|
|
Kuleyev I.G., Kuleyev I.I., Bakharev S.M.
|
| Vol 52, No 13 (2018) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
(Eng)
|
|
Seredin P.V., Leiste H., Beltiukov A.N., Arsentyev I.N., Mizerov A.M., Khudyakov Y.Y., Lenshin A.S., Kondrashin M.A., Zolotukhin D.S., Goloshchapov D.L., Rinke M.
|
| Vol 52, No 8 (2018) |
Solid-Phase Reactions and Phase Transformations in a Nanoscale Bismuth/Selenium Film Structure |
(Eng)
|
|
Kogai V.Y., Mikheev G.M.
|
| Vol 52, No 8 (2018) |
Formation of Precipitates in Si Implanted with 64Zn+ and 16O+ Ions |
(Eng)
|
|
Privezentsev V.V., Kirilenko E.P., Goryachev A.V., Lutzau A.V.
|
| Vol 52, No 8 (2018) |
Features of 63,65Cu NMR Spectra in the Local Field of Samples of CuFeS2 Semiconductor Mineral from Oceanic Sulfide Deposits |
(Eng)
|
|
Matukhin V.L., Pogoreltsev A.I., Gavrilenko A.N., Garkavyi S.O., Shmidt E.V., Babaeva S.F., Sukhanova A.A., Terukov E.I.
|
| Vol 52, No 7 (2018) |
Matrix Calculation of the Spectral Characteristics of AII–BVI Semiconductors Doped with Iron-Group Ions |
(Eng)
|
|
Kurchatov I.S., Kustov E.F.
|
| Vol 52, No 2 (2018) |
Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons |
(Eng)
|
|
Yafarov R.K.
|
| Vol 51, No 9 (2017) |
Residual stresses in silicon and their evolution upon heat treatment and irradiation |
(Eng)
|
|
Matyash I.E., Minailova I.A., Serdega B.K., Khirunenko L.I.
|
| Vol 51, No 8 (2017) |
Mn0.1Ag0.9In4.7S7.6 single crystals: Crystal structure, band gap, and thermal expansion |
(Eng)
|
|
Bodnar I.V., Tkhan C.B.
|
| Vol 51, No 8 (2017) |
High-temperature diffusion of magnesium in dislocation-free silicon |
(Eng)
|
|
Shuman V.B., Astrov Y.A., Lodygin A.N., Portsel L.M.
|
| Vol 51, No 6 (2017) |
Polymorphic transformations and thermal expansion in AgCuSe0.5(S,Te)0.5 crystals |
(Eng)
|
|
Aliyev Y.I., Asadov Y.G., Aliyeva R.D., Jabarov S.H.
|
| Vol 51, No 6 (2017) |
On a neutron detector based on TlInSe2 crystals intercalated with a lithium isotope |
(Eng)
|
|
Alekseev I.V., Goremychkin E.A., Gundorin N.A., Petrenko A.V., Sashin I.L.
|
| Vol 51, No 6 (2017) |
Study of the distribution profile of iron ions implanted into silicon |
(Eng)
|
|
Kozhemyako A.V., Balakshin Y.V., Shemukhin A.A., Chernysh V.S.
|
| Vol 51, No 5 (2017) |
Negative annealing in silicon after the implantation of high-energy sodium ions |
(Eng)
|
|
Korol’ V.M., Zastavnoi A.V., Kudriavtsev Y., Asomoza R.
|
| Vol 51, No 3 (2017) |
Single crystals of (FeIn2S4)x · (CuIn5S8)1–x alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion |
(Eng)
|
|
Bodnar I.V., Zhafar M.A., Kasyuk Y.V., Fedotova Y.A.
|
| Vol 51, No 3 (2017) |
Crystal defects in solar cells produced by the method of thermomigration |
(Eng)
|
|
Lozovskii V.N., Lomov A.A., Lunin L.S., Seredin B.M., Chesnokov Y.M.
|
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