| 期 |
标题 |
文件 |
| 卷 52, 编号 13 (2018) |
nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm |
(Eng)
|
|
Kulikov V., Maslov D., Sabirov A., Solodkov A., Dudin A., Katsavets N., Kogan I., Shukov I., Chaly V.
|
| 卷 52, 编号 13 (2018) |
GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) |
(Eng)
|
|
Khvostikov V., Sorokina S., Potapovich N., Levin R., Marichev A., Timoshina N., Pushnyi B.
|
| 卷 52, 编号 12 (2018) |
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers |
(Eng)
|
|
Asryan L., Zubov F., BalezinaPolubavkina Y., Moiseev E., Muretova M., Kryzhanovskaya N., Maximov M., Zhukov A.
|
| 卷 52, 编号 12 (2018) |
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes |
(Eng)
|
|
Ivanov P., Samsonova T., Potapov A.
|
| 卷 52, 编号 12 (2018) |
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects |
(Eng)
|
|
Kozlovski V., Lebedev A., Davydovskaya K., Lyubimova Y.
|
| 卷 52, 编号 10 (2018) |
Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier |
(Eng)
|
|
Torkhov N.
|
| 卷 52, 编号 10 (2018) |
Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs |
(Eng)
|
|
Volkov V., Kogan L., Turkin A., Yunovich A.
|
| 卷 52, 编号 10 (2018) |
Analysis of the Features of Hot-Carrier Degradation in FinFETs |
(Eng)
|
|
Makarov A., Tyaginov S., Kaczer B., Jech M., Chasin A., Grill A., Hellings G., Vexler M., Linten D., Grasser T.
|
| 卷 52, 编号 10 (2018) |
Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures |
(Eng)
|
|
Grebenshchikova E., Salikhov K., Sidorov V., Shutaev V., Yakovlev Y.
|
| 卷 52, 编号 10 (2018) |
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes |
(Eng)
|
|
Ivanov P., Potapov A., Kudoyarov M., Samsonova T.
|
| 卷 52, 编号 10 (2018) |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
(Eng)
|
|
Maximov M., Nadtochiy A., Shernyakov Y., Payusov A., Vasil’ev A., Ustinov V., Serin A., Gordeev N., Zhukov A.
|
| 卷 52, 编号 10 (2018) |
Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals |
(Eng)
|
|
Nemov S., Andreeva V., Ulashkevich Y., Povolotsky A., Allahkhah A.
|
| 卷 52, 编号 9 (2018) |
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range |
(Eng)
|
|
Kunitsyna E., Andreev I., Konovalov G., Ivanov E., Pivovarova A., Il’inskaya N., Yakovlev Y.
|
| 卷 52, 编号 9 (2018) |
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells |
(Eng)
|
|
Dubinov A., Aleshkin V., Morozov S.
|
| 卷 52, 编号 9 (2018) |
Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method |
(Eng)
|
|
Klochko N., Kopach V., Khrypunov G., Korsun V., Lyubov V., Zhadan D., Otchenashko A., Kirichenko M., Khrypunov M.
|
| 卷 52, 编号 8 (2018) |
Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators |
(Eng)
|
|
Shalimova M.
|
| 卷 52, 编号 8 (2018) |
Effect of Deep Centers on the Statistical Delay of Microplasma Breakdown in Gallium-Arsenide Light-Emitting Diodes |
(Eng)
|
|
Ionychev V., Shesterkina A.
|
| 卷 52, 编号 8 (2018) |
On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation |
(Eng)
|
|
Vasileva G., Vasilyev Y., Novikov S., Danilov S., Ganichev S.
|
| 卷 52, 编号 8 (2018) |
Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength |
(Eng)
|
|
Babichev A., Gladyshev A., Kurochkin A., Kolodeznyi E., Sokolovskii G., Bougrov V., Karachinsky L., Novikov I., Bousseksou A., Egorov A.
|
| 卷 52, 编号 7 (2018) |
Study of Deep Levels in a HIT Solar Cell |
(Eng)
|
|
Shilina D., Litvinov V., Maslov A., Mishustin V., Terukov E., Titov A., Vikhrov S., Vishnyakov N., Gudzev V., Ermachikhin A.
|
| 卷 52, 编号 7 (2018) |
Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers |
(Eng)
|
|
Terukov E., Abramov A., Andronikov D., Emtsev K., Panaiotti I., Titov A., Shelopin G.
|
| 卷 52, 编号 7 (2018) |
Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency |
(Eng)
|
|
Bochkareva N., Shreter Y.
|
| 卷 52, 编号 7 (2018) |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
(Eng)
|
|
Emtsev V., Gushchina E., Petrov V., Tal’nishnih N., Chernyakov A., Shabunina E., Shmidt N., Usikov A., Kartashova A., Zybin A., Kozlovski V., Kudoyarov M., Saharov A., Oganesyan A., Poloskin D., Lundin V.
|
| 卷 52, 编号 6 (2018) |
High-Sensitivity Photodetector Based on Atomically Thin MoS2 |
(Eng)
|
|
Lavrov S., Shestakova A., Mishina E., Efimenkov Y., Sigov A.
|
| 卷 52, 编号 6 (2018) |
Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal |
(Eng)
|
|
Maiboroda I., Grishchenko J., Ezubchenko I., Sokolov I., Chernych I., Andreev A., Zanaveskin M.
|
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