XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Выпуск	Название	Файл
Том 50, № 12 (2016)	CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures	(Eng)
Varavin V., Vasilyev V., Guzev A., Dvoretsky S., Kovchavtsev A., Marin D., Sabinina I., Sidorov Y., Sidorov G., Tsarenko A., Yakushev M.
Том 50, № 12 (2016)	Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures	(Eng)
Novikov A., Shaleev M., Yurasov D., Yunin P.
Том 50, № 12 (2016)	Resonant features of the terahertz generation in semiconductor nanowires	(Eng)
Trukhin V., Bouravleuv A., Mustafin I., Cirlin G., Kuritsyn D., Rumyantsev V., Morosov S., Kakko J., Huhtio T., Lipsanen H.
Том 50, № 12 (2016)	PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity	(Eng)
Ishchenko D., Klimov A., Shumsky V., Epov V.
Том 50, № 12 (2016)	On a new method of heterojunction formation in III–V nanowires	(Eng)
Sibirev N., Koryakin A., Dubrovskii V.
Том 50, № 12 (2016)	Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures	(Eng)
Gudina S., Arapov Y., Saveliev A., Neverov V., Podgornykh S., Shelushinina N., Yakunin M., Vasil’evskii I., Vinichenko A.
Том 50, № 12 (2016)	Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron	(Eng)
Surovegina E., Demidov E., Drozdov M., Murel A., Khrykin O., Shashkin V., Lobaev M., Gorbachev A., Viharev A., Bogdanov S., Isaev V., Muchnikov A., Chernov V., Radishchev D., Batler D.
Том 50, № 12 (2016)	Polarization of the photoluminescence of quantum dots incorporated into quantum wires	(Eng)
Platonov A., Kochereshko V., Kats V., Cirlin G., Bouravleuv A., Avdoshina D., Delga A., Besombes L., Mariette H.
Том 50, № 12 (2016)	Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors	(Eng)
Tarasova E., Obolenskaya E., Hananova A., Obolensky S., Zemliakov V., Egorkin V., Nezhenzev A., Saharov A., Zazul’nokov A., Lundin V., Zavarin E., Medvedev G.
Том 50, № 12 (2016)	Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells	(Eng)
Rumyantsev V., Fadeev M., Morozov S., Dubinov A., Kudryavtsev K., Kadykov A., Tuzov I., Dvoretskii S., Mikhailov N., Gavrilenko V., Teppe F.
Том 50, № 12 (2016)	Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account	(Eng)
Obolenskaya E., Tarasova E., Churin A., Obolensky S., Kozlov V.
Том 50, № 12 (2016)	Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers	(Eng)
Baidakova N., Novikov A., Shaleev M., Yurasov D., Morozova E., Shengurov D., Krasilnik Z.
Том 50, № 12 (2016)	Strained multilayer structures with pseudomorphic GeSiSn layers	(Eng)
Timofeev V., Nikiforov A., Tuktamyshev A., Yesin M., Mashanov V., Gutakovskii A., Baidakova N.
Том 50, № 12 (2016)	Mercury vacancies as divalent acceptors in Hg_yTe_{1 – y}/Cd_xHg_{1 – x}Te structures with quantum wells	(Eng)
Fadeev M., Varavin V., Mikhailov N., Dvoretsky S., Gavrilenko V., Teppe F., Kozlov D., Rumyantsev V., Morozov S., Kadykov A.
Том 50, № 12 (2016)	Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer	(Eng)
Tikhov S., Gorshkov O., Koryazhkina M., Kasatkin A., Antonov I., Vihrova O., Morozov A.
Том 50, № 12 (2016)	Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm	(Eng)
Maremyanin K., Rumyantsev V., Ikonnikov A., Bovkun L., Chizhevskii E., Zasavitskii I., Gavrilenko V.
Том 50, № 12 (2016)	Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs	(Eng)
Ushanov V., Chaldyshev V., Preobrazhenskii V., Putyato M., Semyagin B.
Том 50, № 12 (2016)	Polarization of the induced THz emission of donors in silicon	(Eng)
Kovalevsky K., Zhukavin R., Tsyplenkov V., Pavlov S., Hübers H., Abrosimov N., Shastin V.
Том 50, № 12 (2016)	Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection	(Eng)
Fedorov G., Stepanova T., Gazaliev A., Gaiduchenko I., Kaurova N., Voronov B., Goltzman G.
Том 50, № 12 (2016)	Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation	(Eng)
Puzanov A., Obolenskiy S., Kozlov V.
Том 50, № 12 (2016)	On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells	(Eng)
Yablonsky A., Zhukavin R., Bekin N., Novikov A., Yurasov D., Shaleev M.
Том 50, № 12 (2016)	Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm	(Eng)
Akimov A., Klimov A., Morozov S., Suprun S., Epov V., Ikonnikov A., Fadeev M., Rumyantsev V.
Том 50, № 12 (2016)	Polariton condensate coherence in planar microcavities in a magnetic field	(Eng)
Chernenko A., Rahimi-lman A., Fischer J., Amthor M., Schneider C., Reitzenstein S., Forchel A., Hoefling S.
Том 50, № 12 (2016)	The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells	(Eng)
Aleshkin V., Gavrilenko L., Gaponova D., Krasil’nik Z., Kryzhkov D.
Том 50, № 12 (2016)	Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface	(Eng)
Koryazhkina M., Tikhov S., Gorshkov O., Kasatkin A., Antonov I.
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