| Issue |
Title |
File |
| Vol 46, No 5 (2017) |
Low-noise amplifier for the range of 57–64 GHz with grounding holes through photolake layer |
(Eng)
|
|
Krapukhin D.V., Mal’tsev P.P.
|
| Vol 46, No 5 (2017) |
Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology |
(Eng)
|
|
Orlov O.M., Voronov D.D., Izmailov R.A., Krasnikov G.Y.
|
| Vol 46, No 5 (2017) |
Modeling SiO2 leakage currents caused by electrical overloads |
(Eng)
|
|
Polunin V.A.
|
| Vol 46, No 5 (2017) |
Small-signal optimization approach to design of microwave signal switch ICs on MOS transistors |
(Eng)
|
|
Elesin V.V., Nazarova G.N., Usachev N.A., Chukov G.V.
|
| Vol 46, No 4 (2017) |
Effect of the mixture composition on the electrophysical parameters and emission spectra of CF2Cl2/Ar and CF2Cl2/He plasma |
(Eng)
|
|
Pivovarenok S.A.
|
| Vol 46, No 4 (2017) |
Copper etching kinetics in a high-frequency discharge of freon R12 |
(Eng)
|
|
Dunaev A.V., Murin D.B.
|
| Vol 46, No 4 (2017) |
Calculating the high-frequency electrical conductivity of a thin semiconductor film for different specular reflection coefficients of its surface |
(Eng)
|
|
Kuznetsova I.A., Romanov D.N., Savenko O.V., Yushkanov A.A.
|
| Vol 46, No 4 (2017) |
Effect of constructional features of the insulating gap of open TiN–SiO2–W and Si–SiO2–W “sandwich” structures on the process of their electroforming |
(Eng)
|
|
Mordvintsev V.M., Kudryavtsev S.E.
|
| Vol 46, No 4 (2017) |
Integrated optical-controlled diamond sensors |
(Eng)
|
|
Tsukanov A.V.
|
| Vol 46, No 4 (2017) |
Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures |
(Eng)
|
|
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Garmash V.I.
|
| Vol 46, No 4 (2017) |
A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films |
(Eng)
|
|
Ishchenko D.V., Kuchumov B.M.
|
| Vol 46, No 4 (2017) |
Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles |
(Eng)
|
|
Sogoyan A.V., Chumakov A.I.
|
| Vol 46, No 4 (2017) |
Method of radiational identification of a plant and characterization of integrated circuit technology |
(Eng)
|
|
Sogoyan A.V., Davydov G.G., Artamonov A.S., Kolosova A.S., Telets V.A., Nikiforrov A.Y., Ozhegin Y.A., Kameneva A.S., Moskovskaya Y.M.
|
| Vol 46, No 3 (2017) |
Functional testing of digital signal processors in radiation experiments |
(Eng)
|
|
Marfin V.A., Nekrasov P.V., Kalashnikov O.A., Nikiforov A.Y.
|
| Vol 46, No 3 (2017) |
Specifics of electromagnetic radiation effects on integrated circuits |
(Eng)
|
|
Skorobogatov P.K., Gerasimchuk O.A., Epifantsev K.A., Telets V.A.
|
| Vol 46, No 3 (2017) |
Simulation of impact of the HCP on the CNT-nanosensor by the molecular dynamics method |
(Eng)
|
|
Sogoyan A.V., Boychenko D.V., Demidova A.V.
|
| Vol 46, No 3 (2017) |
Methods of functional-logic simulation of radiation-induced failures of electronic systems based on the fuzzy state machine model |
(Eng)
|
|
Barbashov V.M., Kalashnikov O.A.
|
| Vol 46, No 3 (2017) |
Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors |
(Eng)
|
|
Kagirina K.A., Fedorov Y.V., Lavrukhin D.V., Gamkrelidze S.A., Gnatyuk D.L., Zuev A.V., Ruban O.A., Gromov D.V.
|
| Vol 46, No 3 (2017) |
Resistive switching in mesoscopic heterostructures based on Nd2–xCexCuO4–y epitaxial films |
(Eng)
|
|
Tulina N.A., Ivanov A.A., Rossolenko A.N., Shmytko I.M., Ionov A.M., Mozhchil’ R.N., Borisenko I.Y.
|
| Vol 46, No 3 (2017) |
Study of transient processes in a p-i-n photodetector using the nonstationary physical-topological model |
(Eng)
|
|
Ryndin E.A., Pisarenko I.V.
|
| Vol 46, No 3 (2017) |
Circuit model for functionally integrated injection laser modulators |
(Eng)
|
|
Konoplev B.G., Ryndin E.A., Denisenko M.A.
|
| Vol 46, No 3 (2017) |
Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma |
(Eng)
|
|
Pivovarenok S.A.
|
| Vol 46, No 3 (2017) |
Power switching transistors based on gallium nitride epitaxial heterostructures |
(Eng)
|
|
Erofeev E.V., Fedin I.V., Yurjev Y.N.
|
| Vol 46, No 3 (2017) |
Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using laser controlled thermal cleavage |
(Eng)
|
|
Shchavruk N.V., Redkin S.V., Trofimov A.A., Ivanova N.E., Skripnichenko A.S., Kondratenko V.S., Styran V.V.
|
| Vol 46, No 3 (2017) |
Graphene flexible touchscreen with integrated analog-digital converter |
(Eng)
|
|
Vlasov A.I., Terent’ev D.S., Shakhnov V.A.
|
| 201 - 225 of 328 Items |
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