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期
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卷 53, 编号 13 (2019)
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells
Chen X., Zhao B., Li S.
PDF
(Eng)
卷 53, 编号 12 (2019)
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers
Mokhov D., Berezovskaya T., Nikitina E., Shubina K., Mizerov A., Bouravleuv A.
PDF
(Eng)
卷 53, 编号 11 (2019)
Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?
Titov A., Karabeshkin K., Karaseov P., Struchkov A.
PDF
(Eng)
卷 53, 编号 16 (2019)
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
Sakharov A., Kaliteevskii M., Voznyuk G., Levitskii I., Mitrofanov M., Tsatsulnikov A., Lundin W., Rodin S., Usov S., Evtikhiev V.
PDF
(Eng)
卷 53, 编号 9 (2019)
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov A., Timoshnev S., Nikitina E., Sobolev M., Shubin K., Berezovskaia T., Mokhov D., Lundin W., Nikolaev A., Bouravleuv A.
PDF
(Eng)
卷 53, 编号 16 (2019)
Selective Epitaxy of Submicron GaN Structures
Lundin W., Tsatsulnikov A., Rodin S., Sakharov A., Mitrofanov M., Levitskii I., Voznyuk G., Evtikhiev V.
PDF
(Eng)
卷 52, 编号 16 (2018)
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
PDF
(Eng)
卷 53, 编号 16 (2019)
Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB
Mitrofanov M., Voznyuk G., Rodin S., Lundin W., Evtikhiev V., Tsatsulnikov A.
PDF
(Eng)
卷 52, 编号 15 (2018)
Quantum Efficiency of Gallium Nitride–Based Heterostructures with GaInN Quantum Wells
Vigdorovich E.
PDF
(Eng)
卷 53, 编号 16 (2019)
The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions
Kazanov D., Evropeytsev E., Shubina T.
PDF
(Eng)
卷 52, 编号 9 (2018)
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles
Stovpiaga E., Eurov D., Kurdyukov D., Smirnov A., Yagovkina M., Yakovlev D., Golubev V.
PDF
(Eng)
卷 53, 编号 14 (2019)
Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
Arteev D., Sakharov A., Lundin W., Zavarin E., Zakheim D., Tsatsulnikov A.
PDF
(Eng)
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