期 |
标题 |
文件 |
卷 53, 编号 8 (2019) |
Relaxation, Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures |
|
Kurbanov M., Ramazanova I., Dadashov Z., Mamedov F., Huseynova G., Yusifova U., Tatardar F., Faraczade I.
|
卷 51, 编号 9 (2017) |
Residual stresses in silicon and their evolution upon heat treatment and irradiation |
|
Matyash I., Minailova I., Serdega B., Khirunenko L.
|
卷 53, 编号 10 (2019) |
Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures |
|
Spirin K., Gaponova D., Gavrilenko V., Mikhailov N., Dvoretsky S.
|
卷 51, 编号 7 (2017) |
Resistance and thermoelectric power of carbon fibers upon changing the conductivity type |
|
Ivanov D., Ivanov K., Uryupin O.
|
卷 52, 编号 5 (2018) |
Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold |
|
Gladskikh I., Gushchin M., Vartanyan T.
|
卷 53, 编号 4 (2019) |
Resonance Absorption of Electromagnetic Radiation in a Phosphorene Single Layer |
|
Karpunin V., Margulis V.
|
卷 52, 编号 14 (2018) |
Resonant and Nonresonant Nonlinear Absorption in Colloidal Core/Shell Semiconductor Nanoplatelets |
|
Smirnov A., Golinskaya A., Przhiyalkovskii D., Kozlova M., Saidzhonov B., Vasiliev R., Dneprovskii V.
|
卷 50, 编号 12 (2016) |
Resonant features of the terahertz generation in semiconductor nanowires |
|
Trukhin V., Bouravleuv A., Mustafin I., Cirlin G., Kuritsyn D., Rumyantsev V., Morosov S., Kakko J., Huhtio T., Lipsanen H.
|
卷 52, 编号 4 (2018) |
Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures |
|
Ushanov V., Chaldyshev V., Preobrazhenskiy V., Putyato M., Semyagin B.
|
卷 51, 编号 8 (2017) |
Response of thermoelectric parameters of Bi0.5Sb1.5Te3 films to secondary recrystallization |
|
Boykov Y., Danilov V.
|
卷 51, 编号 4 (2017) |
Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe |
|
Kozhukhov A., Sheglov D., Latyshev A.
|
卷 52, 编号 12 (2018) |
Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers |
|
Mamutin V., Ilyinskaya N., Usikova A., Lyutetskiy A.
|
卷 50, 编号 3 (2016) |
Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms |
|
Peleshchak R., Lazurchak I., Kuzyk O., Dan’kiv O., Zegrya G.
|
卷 50, 编号 6 (2016) |
Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga) |
|
Poklonski N., Vyrko S., Poklonskaya O., Zabrodskii A.
|
卷 50, 编号 5 (2016) |
Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon |
|
Guk I., Shandybina G., Yakovlev E.
|
卷 50, 编号 8 (2016) |
Room temperature de Haas–van Alphen effect in silicon nanosandwiches |
|
Bagraev N., Grigoryev V., Klyachkin L., Malyarenko A., Mashkov V., Romanov V.
|
卷 52, 编号 8 (2018) |
Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength |
|
Babichev A., Gladyshev A., Kurochkin A., Kolodeznyi E., Sokolovskii G., Bougrov V., Karachinsky L., Novikov I., Bousseksou A., Egorov A.
|
卷 50, 编号 10 (2016) |
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm |
|
Novikov I., Karachinsky L., Egorov A., Babichev A., Bousseksou A., Pikhtin N., Tarasov I., Nikitina E., Sofronov A., Firsov D., Vorobjev L.
|
卷 52, 编号 3 (2018) |
Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model |
|
Altukhov V., Sankin A., Sigov A., Sysoev D., Yanukyan E., Filippova S.
|
卷 53, 编号 9 (2019) |
Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures |
|
Rumyantsev V., Maremyanin K., Fokin A., Dubinov A., Utochkin V., Glyavin M., Mikhailov N., Dvoretskii S., Morozov S., Gavrilenko V.
|
卷 51, 编号 7 (2017) |
Segmented thermoelectric unicouple for an operating temperature range of 30–320°C |
|
Sorokin A.
|
卷 52, 编号 10 (2018) |
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography |
|
Lundin W., Tsatsulnikov A., Rodin S., Sakharov A., Usov S., Mitrofanov M., Levitskii I., Evtikhiev V.
|
卷 53, 编号 16 (2019) |
Selective Epitaxy of Submicron GaN Structures |
|
Lundin W., Tsatsulnikov A., Rodin S., Sakharov A., Mitrofanov M., Levitskii I., Voznyuk G., Evtikhiev V.
|
卷 51, 编号 12 (2017) |
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells |
|
Baidakova N., Verbus V., Morozova E., Novikov A., Skorohodov E., Shaleev M., Yurasov D., Hombe A., Kurokawa Y., Usami N.
|
卷 52, 编号 16 (2018) |
Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching |
|
Fedorov V., Cirlin G., Shkoldin V., Shugurov K., Mozharov A., Kirilenko D., Sapunov G., Dvoretckaia L., Bolshakov A., Mukhin I.
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