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Issue Title File
Vol 53, No 8 (2019) Relaxation, Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures
Kurbanov M.A., Ramazanova I.S., Dadashov Z.A., Mamedov F.I., Huseynova G.K., Yusifova U.V., Tatardar F.N., Faraczade I.A.
Vol 51, No 9 (2017) Residual stresses in silicon and their evolution upon heat treatment and irradiation
Matyash I.E., Minailova I.A., Serdega B.K., Khirunenko L.I.
Vol 53, No 10 (2019) Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures
Spirin K.E., Gaponova D.M., Gavrilenko V.I., Mikhailov N.N., Dvoretsky S.A.
Vol 51, No 7 (2017) Resistance and thermoelectric power of carbon fibers upon changing the conductivity type
Ivanov D.K., Ivanov K.G., Uryupin O.N.
Vol 52, No 5 (2018) Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold
Gladskikh I.A., Gushchin M.G., Vartanyan T.A.
Vol 53, No 4 (2019) Resonance Absorption of Electromagnetic Radiation in a Phosphorene Single Layer
Karpunin V.V., Margulis V.A.
Vol 52, No 14 (2018) Resonant and Nonresonant Nonlinear Absorption in Colloidal Core/Shell Semiconductor Nanoplatelets
Smirnov A.M., Golinskaya A.D., Przhiyalkovskii D.V., Kozlova M.V., Saidzhonov B.M., Vasiliev R.B., Dneprovskii V.S.
Vol 50, No 12 (2016) Resonant features of the terahertz generation in semiconductor nanowires
Trukhin V.N., Bouravleuv A.D., Mustafin I.A., Cirlin G.E., Kuritsyn D.I., Rumyantsev V.V., Morosov S.V., Kakko J.P., Huhtio T., Lipsanen H.
Vol 52, No 4 (2018) Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures
Ushanov V.I., Chaldyshev V.V., Preobrazhenskiy V.V., Putyato M.A., Semyagin B.R.
Vol 51, No 8 (2017) Response of thermoelectric parameters of Bi0.5Sb1.5Te3 films to secondary recrystallization
Boykov Y.A., Danilov V.A.
Vol 51, No 4 (2017) Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe
Kozhukhov A.S., Sheglov D.V., Latyshev A.V.
Vol 52, No 12 (2018) Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers
Mamutin V.V., Ilyinskaya N.D., Usikova A.A., Lyutetskiy A.V.
Vol 50, No 3 (2016) Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms
Peleshchak R.M., Lazurchak I.I., Kuzyk O.V., Dan’kiv O.O., Zegrya G.G.
Vol 50, No 6 (2016) Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)
Poklonski N.A., Vyrko S.A., Poklonskaya O.N., Zabrodskii A.G.
Vol 50, No 5 (2016) Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon
Guk I.V., Shandybina G.D., Yakovlev E.B.
Vol 50, No 8 (2016) Room temperature de Haas–van Alphen effect in silicon nanosandwiches
Bagraev N.T., Grigoryev V.Y., Klyachkin L.E., Malyarenko A.M., Mashkov V.A., Romanov V.V.
Vol 52, No 8 (2018) Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength
Babichev A.V., Gladyshev A.G., Kurochkin A.S., Kolodeznyi E.S., Sokolovskii G.S., Bougrov V.E., Karachinsky L.Y., Novikov I.I., Bousseksou A.G., Egorov A.Y.
Vol 50, No 10 (2016) Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm
Novikov I.I., Karachinsky L.Y., Egorov A.Y., Babichev A.V., Bousseksou A., Pikhtin N.A., Tarasov I.S., Nikitina E.V., Sofronov A.N., Firsov D.A., Vorobjev L.E.
Vol 52, No 3 (2018) Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model
Altukhov V.I., Sankin A.V., Sigov A.S., Sysoev D.K., Yanukyan E.G., Filippova S.V.
Vol 53, No 9 (2019) Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures
Rumyantsev V.V., Maremyanin K.V., Fokin A.P., Dubinov A.A., Utochkin V.V., Glyavin M.Y., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
Vol 51, No 7 (2017) Segmented thermoelectric unicouple for an operating temperature range of 30–320°C
Sorokin A.I.
Vol 52, No 10 (2018) Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
Lundin W.V., Tsatsulnikov A.F., Rodin S.N., Sakharov A.V., Usov S.O., Mitrofanov M.I., Levitskii I.V., Evtikhiev V.P.
Vol 53, No 16 (2019) Selective Epitaxy of Submicron GaN Structures
Lundin W.V., Tsatsulnikov A.F., Rodin S.N., Sakharov A.V., Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Evtikhiev V.P.
Vol 51, No 12 (2017) Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Baidakova N.A., Verbus V.A., Morozova E.E., Novikov A.V., Skorohodov E.V., Shaleev M.V., Yurasov D.V., Hombe A., Kurokawa Y., Usami N.
Vol 52, No 16 (2018) Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
Fedorov V.V., Cirlin G.E., Shkoldin V.A., Shugurov K.Y., Mozharov A.M., Kirilenko D.A., Sapunov G.A., Dvoretckaia L.N., Bolshakov A.D., Mukhin I.S.
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