| 期 |
标题 |
文件 |
| 卷 51, 编号 11 (2017) |
Optical thyristor based on GaAs/InGaP materials |
|
|
Zvonkov B., Baidus N., Nekorkin S., Vikhrova O., Zdoroveyshev A., Kudrin A., Kotomina V.
|
| 卷 52, 编号 3 (2018) |
Optical Transitions in ZnSe and CdTe Crystals with Involvement of the Cation d Bands |
|
|
Sobolev V., Perevoshchikov D.
|
| 卷 51, 编号 4 (2017) |
Optical transparency of graphene layers grown on metal surfaces |
|
|
Rut’kov E., Lavrovskaya N., Sheshenya E., Gall N.
|
| 卷 53, 编号 6 (2019) |
Optically Induced Charge Exchange in ZnO-Based Composite Structures with Embedded CsPbBr3 Nanocrystals |
|
|
Drozdov K., Krylov I., Chizhov A., Rumyantseva M., Ryabova L., Khokhlov D.
|
| 卷 52, 编号 3 (2018) |
Optimal Doping of Diode Current Interrupters |
|
|
Kyuregyan A.
|
| 卷 51, 编号 8 (2017) |
Optimization of a segmented generating leg |
|
|
Drabkin I., Osvenskii V.
|
| 卷 51, 编号 7 (2017) |
Optimization of segmented cooling leg |
|
|
Drabkin I.
|
| 卷 51, 编号 1 (2017) |
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD |
|
|
Rybalchenko D., Mintairov S., Salii R., Shvarts M., Timoshina N., Kalyuzhnyy N.
|
| 卷 50, 编号 2 (2016) |
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation |
|
|
Tikhomirov V., Zemlyakov V., Volkov V., Parnes Y., Vyuginov V., Lundin W., Sakharov A., Zavarin E., Tsatsulnikov A., Cherkashin N., Mizerov M., Ustinov V.
|
| 卷 52, 编号 2 (2018) |
Optimization of the Parameters of PbSB-based Polycrystalline Photoresistors |
|
|
Miroshnikov B., Miroshnikova I., Popov A.
|
| 卷 51, 编号 1 (2017) |
Optimization of the parameters of power sources excited by β-radiation |
|
|
Bulyarskiy S., Lakalin A., Abanin I., Amelichev V., Svetuhin V.
|
| 卷 52, 编号 1 (2018) |
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) |
|
|
Solov’ev V., Chernov M., Sitnikova A., Brunkov P., Meltser B., Ivanov S.
|
| 卷 51, 编号 11 (2017) |
Optimization of the superlattice parameters for THz diodes |
|
|
Pavelyev D., Vasilev A., Kozlov V., Obolenskaya E., Obolensky S., Ustinov V.
|
| 卷 51, 编号 4 (2017) |
Optimization of vertical cavity lasers with intracavity metal layers |
|
|
Lazarenko A., Ivanov K., Gubaydullin A., Kaliteevski M.
|
| 卷 51, 编号 8 (2017) |
Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics |
|
|
Prokofieva L., Nasredinov F., Konstantinov P., Shabaldin A.
|
| 卷 53, 编号 10 (2019) |
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals |
|
|
Smagina Z., Zinovyev V., Rodyakina E., Fomin B., Stepikhova M., Yablonskiy A., Gusev S., Novikov A., Dvurechenskii A.
|
| 卷 50, 编号 1 (2016) |
Organic light-emitting diodes based on a series of new polythienothiophene complexes and highly luminescent quantum dots |
|
|
Vashchenko A., Goriachiy D., Vitukhnovsky A., Tananaev P., Vasnev V., Rodlovskaya E.
|
| 卷 53, 编号 7 (2019) |
Orientation Relationships upon the Structural Transformation of Monoclinic and Cubic Phases in Silver Sulfide |
|
|
Sadovnikov S., Rempel A.
|
| 卷 51, 编号 5 (2017) |
Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions |
|
|
Askerov S., Abdullayeva L., Hasanov M.
|
| 卷 50, 编号 6 (2016) |
Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium |
|
|
Maraeva E., Moshnikov V., Petrov A., Tairov Y.
|
| 卷 53, 编号 2 (2019) |
Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves |
|
|
Viglin N., Gribov I., Tsvelikhovskaya V., Patrakov E.
|
| 卷 52, 编号 2 (2018) |
Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition |
|
|
Lubyanskiy Y., Bondarev A., Soshnikov I., Bert N., Zolotarev V., Kirilenko D., Kotlyar K., Pikhtin N., Tarasov I.
|
| 卷 53, 编号 12 (2019) |
Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor |
|
|
Sovtus N., Mynbaev K.
|
| 卷 51, 编号 5 (2017) |
Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering |
|
|
Mezdrogina M., Vinogradov A., Levitskii V., Terukova E., Kozhanova Y., Aglikov A.
|
| 卷 52, 编号 4 (2018) |
Partial Electron Localization in a Finite-Size Superlattice Placed in an Electric Field |
|
|
Vlasov K., Pyataev M., Shorokhov A.
|
| 951 - 975 的 1443 信息 |
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