| 期 |
标题 |
文件 |
| 卷 51, 编号 11 (2017) |
Optimization of the superlattice parameters for THz diodes |
(Eng)
|
|
Pavelyev D., Vasilev A., Kozlov V., Obolenskaya E., Obolensky S., Ustinov V.
|
| 卷 51, 编号 11 (2017) |
Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films |
(Eng)
|
|
Akimov A., Klimov A., Suprun S., Epov V.
|
| 卷 51, 编号 11 (2017) |
On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors |
(Eng)
|
|
Aleshkin V., Gavrilenko L.
|
| 卷 51, 编号 11 (2017) |
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition |
(Eng)
|
|
Akimov A., Klimov A., Paschin N., Yaroshevich A., Savchenko M., Epov V., Fedosenko E.
|
| 卷 51, 编号 11 (2017) |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
(Eng)
|
|
Okhapkin A., Korolyov S., Yunin P., Drozdov M., Kraev S., Khrykin O., Shashkin V.
|
| 卷 51, 编号 11 (2017) |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
(Eng)
|
|
Baidus N., Aleshkin V., Dubinov A., Kudryavtsev K., Nekorkin S., Novikov A., Pavlov D., Rykov A., Sushkov A., Shaleev M., Yunin P., Yurasov D., Yablonskiy A., Krasilnik Z.
|
| 卷 51, 编号 11 (2017) |
Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures |
(Eng)
|
|
Alexeev A., Mamaev V., Petrov S.
|
| 卷 51, 编号 11 (2017) |
Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures |
(Eng)
|
|
Plankina S., Vikhrova O., Zvonkov B., Nezhdanov A., Pashen’kin I.
|
| 卷 51, 编号 11 (2017) |
Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection |
(Eng)
|
|
Polischuk O., Fateev D., Popov V.
|
| 卷 51, 编号 11 (2017) |
Optical thyristor based on GaAs/InGaP materials |
(Eng)
|
|
Zvonkov B., Baidus N., Nekorkin S., Vikhrova O., Zdoroveyshev A., Kudrin A., Kotomina V.
|
| 卷 51, 编号 11 (2017) |
Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons |
(Eng)
|
|
Zabavichev I., Potekhin A., Puzanov A., Obolenskiy S., Kozlov V.
|
| 卷 51, 编号 11 (2017) |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
(Eng)
|
|
Gorshkov A., Volkova N., Voronin P., Zdoroveyshchev A., Istomin L., Pavlov D., Usov Y., Levichev S.
|
| 卷 51, 编号 11 (2017) |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
(Eng)
|
|
Reznik R., Kotlyar K., Shtrom I., Soshnikov I., Kukushkin S., Osipov A., Cirlin G.
|
| 卷 51, 编号 11 (2017) |
Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity |
(Eng)
|
|
Derebezov I., Gaisler V., Gaisler A., Dmitriev D., Toropov A., Fischbach S., Schlehahn A., Kaganskiy A., Heindel T., Bounouar S., Rodt S., Reitzenstein S.
|
| 卷 51, 编号 11 (2017) |
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate |
(Eng)
|
|
Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Novikov A., Rykov A., Samartsev I., Fefelov A., Yurasov D., Krasilnik Z.
|
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